Chinese semiconductor thread II

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The first hybrid silicon carbide product in China has been mass-produced​


Recently, Xpeng Motors and Xinlian Integrated Circuit jointly announced that China's first hybrid silicon carbide product has entered mass production, opening up a new path for improving the performance and reducing the cost of new energy vehicles.

This hybrid silicon carbide product was designed and developed by Xpeng Motors and jointly developed and put into mass production by Xinlian Integration. In this hybrid silicon carbide project, Xinlian Integration was responsible for the development and manufacturing of the power chip, as well as the development, implementation, and production of the packaging process. At "Xpeng AI Technology Day," Xpeng Motors announced that it will incorporate hybrid silicon carbide solutions into its future super electric and pure electric vehicles.

The hybrid silicon carbide technology introduced in this mass production initiative innovatively combines silicon and silicon carbide. A representative from Xinlian Integrated told China Electronics News that the biggest advantage of the hybrid silicon carbide solution over pure silicon carbide chip solutions lies in cost control. The high cost of silicon carbide material and the complex manufacturing process contribute to the high cost of pure silicon carbide chips. The hybrid solution reduces the amount of silicon carbide used.
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Yuntian Semiconductor's glass-based IPD technology: Leading breakthroughs in size and performance of high-frequency passive devices​


As demand for high-end applications such as 5G/6G communications , millimeter-wave radar (above 24GHz), and AI computing chips continues to rise, integrated passive device (IPD) technology is becoming a key link in supporting the development of these fields. IPD technology is widely used in core passive components such as filters, duplexers, power splitters, attenuators, and couplers. Improving device performance is inseparable from the support of high-quality substrate materials. Compared to traditional silicon substrates, glass substrates, with their excellent properties such as low dielectric loss, high thermal stability, high resistivity, and adjustable thermal expansion coefficient, provide an ideal platform for achieving higher performance and higher integration of passive devices, and also lay the material foundation for related technological breakthroughs.​

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As a leading company deeply engaged in the field of through-glass via (TGV) technology, Yuntian Semiconductor has relied on its continuous deep cultivation and innovative breakthroughs in this field, focusing on the iterative upgrade of TGV and related processes, and successfully developed and launched glass-based IPD devices covering a wide range of application scenarios. It provides core passive solutions for cutting-edge applications such as 5G/6G communications, millimeter-wave radar, and high-speed interconnection, filling many technological gaps in the domestic high-end passive device field.

Yuntian Semiconductor and Xiamen University have recently collaborated to develop millimeter-wave passive components, achieving excellent test results and overcoming multiple design and process limitations. 24 passive components of varying structures and sizes, including transmission lines, filters, and resonant rings, were successfully integrated onto an 8-inch glass wafer. These components, based on their unique structural designs, demonstrate differentiated and superior performance, operating across a frequency range of 5 GHz to 90 GHz. They not only meet the needs of applications in the sub-6 GHz band, but are also adaptable to millimeter-wave and even higher frequency bands, providing flexible and efficient options for diverse applications.

the final test results and simulation data for this product are essentially consistent, fully validating the reliability and stability of the technology. In terms of performance, it demonstrates excellent transmission performance with low insertion loss, precise filtering characteristics, and remarkable high selectivity.​


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Guoke Testing completed tens of millions of yuan in A+ round financing, and is a third-generation semiconductor and new energy testing equipment manufacturer.​


Suzhou Guoke Testing Technology Co., Ltd. ("Guoke Testing") recently completed tens of millions of yuan in Series A+ financing, exclusively invested by Jinan High-Tech Science and Technology Investment Group. The funds raised will primarily be used to expand production lines for third-generation semiconductor and new energy test equipment, advance R&D of wafer-level inspection equipment, and mass-deliver high-end flying probe testers. They will also be used to accelerate the company's global strategic expansion. This marks another significant step forward in the capital market for the company, following its Series A financing in October 2024.

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Public information shows that Guoke Testing was established in August 2019 and focuses on the research and development and industrialization of testing equipment in the third-generation semiconductor and new energy fields. It is the only company in China that can test packaging substrates, wafers, high-end flexible boards and camera modules. The flying probe testers and AOI automatic optical inspection equipment it developed have achieved domestic substitution, solving the "bottleneck" technical problems in related fields, and have been maturely applied in large quantities by leading companies in the industry and military industrial groups. In 2023, Guoke Testing established a wholly-owned subsidiary in Dongguan, Guangdong, and entered the new energy field. It mainly develops and produces capacity aging detection equipment and machine vision inspection equipment required for the production of new energy batteries.

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