Chinese semiconductor thread II

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Ren Tianling's team from the School of Integrated Circuits proposed an adaptive spatiotemporal information processing paradigm inspired by the attention mechanism.​


A research team from Tsinghua University’s School of Integrated Circuits has developed an attention-inspired in-memory computing device that mimics the human brain’s ability to efficiently process both temporal and spatial information with low energy consumption.

Inspired by the brain’s attention mechanism, particularly the frontoparietal network’s dynamic filtering of sensory input. The team created a 0D-2D heterodimensional interface using MoS₂ channels and Ag conductive filaments. This structure enables nonvolatile storage of past data and analog computation with adjustable weights between current and stored information, allowing adaptive, real-time attention allocation.
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The device performs spatiotemporal processing directly in memory, reducing hardware overhead and power use. A 5×5 array was fabricated and tested to demonstrate its ability to dynamically prioritize moving (point A) versus stationary (point B) objects by adjusting gate voltages—controlling the intensity of temporal and spatial signals.

Simulations show the system can support real-time, context-aware attention allocation in autonomous driving scenarios, enabling roadside and vehicle-side systems to respond adaptively to changing environments with full-range (0–100%) flexibility.

This breakthrough paves the way for energy-efficient, low-power edge intelligence applications—especially in dynamic fields like autonomous vehicles.​

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A rapid modeling method for stochastic effects in extreme ultraviolet photoresists​


Abstract​

Compared to deep ultraviolet (DUV) sources, extreme ultraviolet (EUV) sources have higher photon energy, and their random photon fluctuations have a stronger impact on photoresist morphology. To address the need for rapid modeling of random effects during the EUV photoresist exposure-bake process, this paper proposes a discrete event fast modeling method for the post-bake (PEB) process based on the Gillespie algorithm for the chemical master equation. Its innovative features include: first, separate modeling of four reactions: deprotection, neutralization, acid diffusion, and base diffusion; second, constructing an accumulation array by converting three-dimensional coordinates to one-dimensional coordinates, and employing a binary search algorithm to precisely locate reaction units; and finally, combining a batch delayed update mechanism with a one-dimensional diffusion optimization strategy to achieve efficient simulation of the PEB process. Simulation data demonstrate that this method achieves a 2.15-3.75x improvement in computational efficiency while maintaining nearly unchanged simulation accuracy. This proposed method not only provides an efficient numerical solution for modeling random effects in EUV photoresists, but also offers valuable insights for simulating complex reaction systems.​
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Shanghai Silicon Industry's 2025 First Half Report: Revenue of 1.697 billion yuan​


Shanghai Silicon Industry recently officially released its 2025 semi-annual report. The report disclosed important information such as the company's operating results and financial status in the first half of the year.

According to the report, Shanghai Silicon Industry achieved operating revenue of 1.697 billion yuan in the first half of 2025, an 8.16% year-on-year increase. In the second quarter, Shanghai Silicon Industry achieved revenue of 896 million yuan, an 11.75% increase from the first quarter.

The report shows that the company is actively promoting capacity construction projects in Shanghai Lingang and Taiyuan, Shanxi. The combined monthly production capacity of 300mm semiconductor silicon wafers in Shanghai and Taiyuan has reached 750,000 wafers. In the first half of 2025, the company's R&D investment totaled 155 million yuan, a 25.88% increase over the same period last year, with R&D expenses accounting for 9.16% of operating revenue. In the first half of the year, Shanghai Silicon Industry developed over 50 new 300mm semiconductor silicon wafer products. The company achieved a breakthrough in the development of SOI materials based on 300mm silicon wafer technology and has begun shipping samples in bulk to customers in the RF, power device, and silicon photonics sectors.

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