Good news about domestic photoresist: key technologies and applications of 14-28nm process deep ultraviolet photoresist: cost is reduced by 45% compared with similar foreign products, forcing them to reduce prices. The overall cost of the integrated circuit industry has dropped by 30%, replacing 10% of foreign imports, and the chip yield has increased from 80% to 97%.
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Good news about domestic photoresist, key technology and application of 14-28nm process deep ultraviolet photoresist: compared with similar foreign products, the cost is reduced by 45%, forcing them to reduce prices. The overall cost of the integrated circuit industry has dropped by 30%, replacing 10% of foreign imports, and the chip yield has increased from 80% to 97%.
The first product to be replaced is the American photoresist
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This project is a key raw material in the integrated circuit manufacturing process-28nm process deep ultraviolet photoresist key technology research and application research. The products cover different fields of integrated circuit manufacturing and compound semiconductors, and are the key "neck" materials to be overcome in chip manufacturing.
The research and development and application of project products break the high technical barriers and market barriers of Japanese and American companies, realize the substitution of imported photoresists by domestic production, and strongly support the development of my country's key integrated circuit material industry.
With the support of Jiangsu Province's scientific and technological achievements transformation projects, this project has realized the key technologies and applications of 28nm process deep ultraviolet photoresist. The main innovations are as follows:
1. Process technology for preparing deep ultraviolet photoresist below 28nm and its related raw materials.
2. Replacement of Dow Chemical Company's deep ultraviolet photoresist EPIC and UV series products.
3. Two group standards for integrated circuits, T/ICMTIA4-2020 "ArF Photoresist Monomer Part 1 Liquid Methacrylates" and T/ICMTIA5-2020 "ArF Photoresist Monomer Part 1 Solid Methacrylates", have been formulated.
This project innovatively developed a full industry chain technology route integrating photoresist monomer-photoresist photosensitizer-photoresist resin-photoresist formula-photoresist preparation and production. By fully mastering the core technology of each link, four types of products were obtained: ArF photoresist hole type HTA112X series, groove type HTA116X series, KrF photoresist HTK10X series and KrF negative photoresist.
Technical indicators, monomer metal ion control 10ppb level, deep ultraviolet ArF photoresist meets the various indicators of N90/N55/N28 nodes.
ArF photoresist products include wet ArF photoresist hole HTA112X and trench HTA116X series, both of which are based on the independent mass production of high-purity low-gold impurity monomers, designed and optimized ArF photoresist resin structure, and developed ArF photoresists with excellent performance, breaking foreign restrictions on the import of semiconductor photoresists and their materials in my country, and realizing the localization of high-resolution ArF photoresists for logic devices at 65nm-14nm technology nodes.
The dry ArF technology capability reaches the process requirements of 120nm line width half-pitch at the N90 technology node and 90nm line width and half-pitch of through holes at the N55 technology node; the immersion ArF reaches the resolution capability of 50nm half-pitch of through holes at the N28 technology node.
The HTK10X series of KrF photoresist products are developed for the "28nm and below integrated circuit chip high-resolution photoresist development project". Through independent resin structure design and formula optimization, it successfully breaks the technical barriers of KrF photoresist for advanced processes and meets the process requirements of 160nm half-pitch line width at the N65 technology node and 120nm half-pitch line width at the N40 technology node and below.
The HTKN601-X series of KrF negative photoresists uses a completely independent raw material supply chain and is a photoresist used for the lift-off process of surface acoustic wave filters. Surface acoustic wave filters are the core components for signal transmission and reception in mobile communication systems. High-generation (3G, 4G and 5G) filters have long relied on imports and have been jointly identified by the National Development and Reform Commission and the Ministry of Industry and Information Technology as the second "device that affects national security". This product can be used in high-dose ion implantation lift-off processes and surface acoustic wave filter production processes. It is one of the key materials and currently achieves import substitution for such products.
The project products have high technological content, high added value and broad market prospects. Some products fill domestic gaps, solve the problem of stable batch production technology of raw materials and supporting material series, and fundamentally solve the domestic substitution of "stuck neck" materials from the entire supply chain. And it has independent intellectual property rights and has authorized a number of invention patents, truly achieving self-sufficiency and domestic photoresist that is not restricted by foreign countries. The implementation of the project has achieved good economic and social benefits. Compared with similar foreign products, the cost of the project products has been reduced by 45%, the gross profit margin has reached 55%, and the products have replaced 10% of foreign imports, reducing the overall cost of the domestic integrated circuit industry by 30%, and the chip yield has increased from 80% to 97%. The implementation of the project is of great significance to breaking through the gap, mastering core technologies, breaking the high-price monopoly of imported products, realizing the localization of the product, and enhancing the status and core competitiveness of my country's integrated circuit industry.
Achievement category: applied technology
Achievement level: domestic leading
Evaluation form: acceptance
Research start and end time: 2015-04~2019-06
Achievement storage time: 2023