Chinese semiconductor thread II

[tokenanalyst]

Ruilian New Materials: Several photoresist monomer materials have entered mass production.​

February 5 that Ruilian New Materials stated in response to investor inquiries on an interactive platform that the company currently has a variety of semiconductor photoresist monomer materials in reserve, several of which are already in mass production, some are in the customer verification stage, and some have entered the downstream verification stage.

Ruilian New Materials accumulated experience in synthesis and purification, capabilities in metal ion analysis, detection, and removal, advantages in pilot-scale production, and a strong reputation in the Japanese market, the company began developing photoresist materials, including semiconductor photoresist monomers and film material intermediates, in 2015. Focusing on high-end photoresist materials, its main products currently include semiconductor photoresist monomers, TFT planarization layer photoresists, film material intermediates, and polyimide monomers. The film material intermediates primarily serve as optical film materials for display panels, while the photoresist materials include display photoresists and semiconductor photoresist monomers. Semiconductor photoresist monomers mainly consist of ArF, KrF, and EUV photoresist monomers; display photoresists primarily serve as TFT planarization layer photoresists. The photoresist market has high barriers to entry and long customer validation cycles. The company has already developed multiple photoresist materials, experiencing rapid business growth, and its products are exported to well-known companies in countries such as South Korea and Japan.

Xi'an Ruilian New Materials Co., Ltd., established in 1999, is jointly owned by investment institutions such as Zhuoshi Partnership and Guofu Investment, as well as the company's senior and middle-level management. The company is a high-tech enterprise specializing in the research, development, production, and sales of specialized organic new materials. Its main products include monomeric liquid crystals, OLED materials, and innovative drug intermediates, used in the production of OLED terminal materials, mixed liquid crystals, and active pharmaceutical ingredients. The end-use applications of its products include OLED displays, TFT-LCD displays, and pharmaceutical preparations.

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Jiuri New Materials: new photoinitiator projects put into production, solidifying its industry position.​

Newly added photoinitiator projects are gradually entering the trial production stage, solidifying the company's leading position in the industry. On January 13, 2026, the company's subsidiary, Hongyuan Tiancheng, announced that its "350-ton/year hydroxy ketone series photoinitiator project" had entered the trial production stage. On January 24, 2026, the company announced that its subsidiary, Hongrun Chemical, announced that its "8,000-ton/year photoinitiator H4 ketone project" had entered the trial production stage. Also on January 24, 2026, the company announced that its subsidiary, Shandong Jiuri Chemical, announced that its "18,340-ton/year photocurable materials and photoresist intermediates project" had entered the trial production stage for its 784 photoinitiator. The trial production of these projects will further improve the company's product portfolio and enhance its self-sufficiency in upstream intermediates for major photoinitiators such as 184, further solidifying the company's leading position in the photoinitiator industry.​

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Study on debris contamination characteristics and control methods of DPP-type EUV light source​

As a key technology for advanced semiconductor manufacturing, extreme ultraviolet lithography (EUVL) requires high exposure power to achieve high productivity and low cost. Nevertheless, debris-induced contamination and degradation of EUV optics remain a major limitation for lithography efficiency and system stability, especially in discharge-produced plasma (DPP) EUV sources. In this work, we realized the effectiveness of in-situ monitoring and control of debris contamination associated with DPP sources. First, we analyze the material characteristics and deposition behavior of debris through in-situ collection and characterization experiments. By varying exposure conditions, we identify key parameters that influence debris deposition. Furthermore, we evaluate the effectiveness and limitations of cleaning debris with operando-compatible argon (Ar) plasma. Finally, we design a debris mitigation (DM) unit that integrates vacuum differential and debris inhibition functions for the DPP system. This work offers practical strategies to mitigate debris in DPP EUV sources, which is crucial for enhancing their power scalability and operational stability in advanced lithography systems.​

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Controlled Cross-Linking for Water Developable Hf-Based Dry Resist Prepared via Molecular Layer Deposition​

Abstract

Metal-containing hybrid resists have attracted considerable attention for advanced lithography owing to their superior performance in resolution, sensitivity, and etch resistance.Beyond these benefits, vapor-deposited dry hybrid resists offer distinct advantages in film-component uniformity and process compatibility.However, such vapor-deposited dry resists typically form highly cross-linked covalent networks, which require aggressive development conditions for patterning and may not effectively establish a significant solubility switch upon exposure.This paper describes the design and fabrication of a molecular layer deposition (MLD)-based dry resist featuring a restricted covalent network, enabled by the unique reactivity of ε-caprolactone (CL). During deposition, nonring-opening reactions and double reaction pathways of some ε-caprolactone precursors systematically disrupt the long-range network integrity, thereby significantly enhancing the solubility of the film in deionized water. E-beam exposure tests confirmed that this resist is developable in deionized water, exhibiting a critical exposure dose of approximately 200 μC·cm−2, which is lower than many other MLD resists. Infrared spectroscopy (IR) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the exposure mechanism primarily involves the cleavage of CO, HfO, and HfN bonds, inducing the detachment of main chain ε-caprolactone molecules from the film matrix.

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Fujian's key projects have been announced, with several projects including those of Anjielimei and Silan Microelectronics making the list.​

Several semiconductor projects were listed, including Xiamen Tianma's 6th generation flexible AM-OLED production line project, Haicang Silan Jihua's 12-inch high-end analog integrated circuit chip manufacturing production line project (Phase I), Xiamen Anjie Limei Technology's high-end packaging substrate and high-end HDI production capacity construction project, Xiamen Silan Jihong Semiconductor Co., Ltd.'s 8-inch SiC power device chip manufacturing production line project (Phase I), Xiamen Haicang Silan Jike's annual production capacity of 204,000 IGBT power device chips and analog circuit chips expansion project, Xiamen Haicang District Silan Mingjia SiC power device production line construction project, Haicang District Integrated Circuit Advanced Packaging and Testing Industrialization Base (Phase I) expansion project, Xiamen Q Technology's camera module component production base, and Xiangcheng District Minxiang Semiconductor Storage Project.

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Shenzhen Pinghu Laboratory successfully developed a gallium oxide photoconductive switch with ultra-low on-resistance up to 10,000 volts.​

The Shenzhen Pinghu Laboratory’s fourth-generation semiconductor team has successfully developed a vertically structured gallium oxide photoconductive switch capable of withstanding tens of thousands of volts. The device features an ultra-low on-resistance of less than 10 ohms, over 80% voltage conversion efficiency, and a turn-on response time below 1 nanosecond—marking significant progress in high-performance optically controlled power semiconductors. This achievement stems from collaborative research with Professor Xiao Longfei’s team at Shandong University, which enabled a comprehensive analysis of device performance and optimized its operational characteristics.

Gallium oxide, known for its ultra-wide bandgap and excellent photosensitivity, is ideal for next-generation high-voltage, fast-response switches. As a key component in pulsed power systems, high-speed control, and advanced energy equipment, this innovation offers promising solutions for applications such as intelligent HVDC transmission, high-power pulse generation, scientific accelerators, and cutting-edge defense technologies. The development represents a major step forward in China’s autonomy and competitiveness in next-generation semiconductor technology.

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In January 2026, a wave of new or expanded projects in electronic specialty gases, industrial gases, and related materials was announced across China, highlighting strong investment in advanced semiconductor supply chains and green energy initiatives.

• Semiconductor & High-Purity Gas Expansion:
  • Hefei Xianwei: Resubmitted EIA for a high-purity electronic gas project with capacities including SiCl₄ (300 t/a), BCl₃ (200 t/a), NF₃ (500 t/a), phosphine-hydrogen mixtures, and excimer laser gases.
  • Northern Special Gas (Zhejiang): Phase I of a silicon-based and third-gen semiconductor materials project includes electronic-grade silane (10,000 t/a), silicon trichloride, and isotopes like boron-10/11.
  • Jiangsu Yuanjia: Approved to produce 500 tons/year of WF₆, 100 tons each of ethylene and propylene for semiconductors.
  • Kangmeng Special Gases (Jingmen): Expansion to produce 1.6 t/a of xenon difluoride and 770–841 kg/year of phosphine, boron trifluoride, and arsine in negative-pressure bottles.
• Major Air Separation & Industrial Gas Projects:
  • Tengzhou Hangyang: 76,700 Nm³/h air separation unit approved (20-year contract with Lianhong Chemical).
  • Jiangxi Hongbing: 10,000 m³/h oxygen production + 10 km pipeline; includes liquid oxygen/nitrogen supply.
  • Zhejiang Haichang Gas: Upgraded pipeline to deliver 4,000 Nm³/h oxygen and 6,000 Nm³/h nitrogen to new industrial park enterprises.
  • Lingang Oxygen Station (BOO model): 30,000 Nm³/h air separation unit for supply to Lingyuan Iron & Steel.
• Electronic Gas Production & Filling:
  • Messer: Approved 300,000-ton/year liquefied gas and electronic specialty gas project (including 136,145 tons liquid nitrogen, 82,490 tons oxygen, and gases like helium/xenon).
  • Merck Electronics (Zhangjiagang): Accepted soil/water conservation for a 1.5 million-liter/year purification and packaging line of diborane gas.
  • Haohua Gas: Energy-saving retrofit to increase nitrogen trifluoride production capacity by 25% (Phase II) and 50% (Phase III).
  • Guangdong Ruitai: Phase II expansion with 10,923 tons/year of industrial gas filling (including mixed gases, hydrocarbons, and laser gases).
• Specialty & Chemical Gases:
  • Fujian De'er: Project to produce 450 tons/year of fluorinated electronic gas and 600 tons of high-purity coolant.
  • Jiangsu Linggu Group: First phase includes 1 million t/a liquid ammonia, 400,000 t/a food-grade CO₂, 10,000 t/a ultrapure ammonia, and 20 million m³/year of electronic hydrogen.
  • Jiangxi Changxinrui: Fluorochemical project (350M RMB investment) to produce PTFE, tetrafluoroethyl ethers, and other fluorinated compounds.
• Helium & Rare Gas Projects:
  • Etuoke Kesi Oil & Gas: Helium extraction project approved to produce ~30.73 ×10⁴ Nm³/year of helium.
  • Jiangxi Future Gas: Proposed 2 million bottles/year gas filling (argon, CO₂, nitrogen, oxygen, etc.) under public review.
• Infrastructure & Headquarters Development:
  • Guangdong Huatai Gas: New Lishui headquarters base with R&D, office, and dormitory facilities.
  • Yixing Hengchang: Expanded cryogenic storage and automated filling of liquid gases (O₂, N₂, Ar) and mixed gases.

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Silergy launches China's first domestically produced automotive-grade BMS AFE product portfolio that meets ASIL-D functional safety standards—TPB79818Q/TPB79828Q/TPB7717Q.​

3PEAK , a supplier focusing on high-performance analog and mixed-signal products, leverages its mature high-voltage technology, high-precision ADC and REF technology capabilities, and experience in mass production of automotive-grade products to launch a portfolio of domestically produced automotive-grade BMS analog front-end products: TPB79818Q/TPB79828Q are 18-series highly integrated AFEs , focusing on precise battery monitoring and equalization control; TPB7717Q is a communication bridge chip, ensuring stable communication between the AFE and the MCU. This portfolio boasts advantages such as a fully domestic supply chain, high-precision monitoring, and ASIL-D functional safety, providing a highly reliable and cost-effective domestically produced BMS solution for new energy vehicles and energy storage systems. It has already passed verification by leading power battery and energy storage BMS customers.

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With a total investment of 2 billion yuan, Inner Mongolia's first 6-inch high-performance semiconductor chip production line has officially started production.​

Inner Mongolia's first 6-inch high-performance semiconductor chip production line officially commenced operation on February 8. With a total investment of 2 billion yuan, the project, led by Jungar Semiconductor Technology (Inner Mongolia) Co., Ltd., has established an advanced intelligent production line with an annual capacity of 1 million wafers. This initiative marks a significant step for the region, filling a critical gap in local semiconductor capabilities and supporting the strategic transformation of Jungar Banner from a traditional energy base into a high-tech industrial cluster.

The project will construct a 6-inch third-generation advanced medium-to-high power industrial automotive-grade chip Fab production line, achieving an annual production capacity of 400,000 industrial automotive-grade chips. The project mainly focuses on the manufacturing of industrial-grade chips for new energy power electronics, device packaging manufacturing, and related industrial chains, building a complete industrial chain layout integrating electronic wafer chips, chip packaging, and applications. Upon completion, the project will effectively fill the gap in the power electronics semiconductor chip industry in the region and strive to create the region's first strategic emerging industrial park for electronic semiconductors.

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High-power beyond extreme ultraviolet FEL radiation with flexible polarization at SHINE​

Linac-based free-electron lasers (FELs) feature high brightness, narrow bandwidth, controllable polarization, and wide wavelength tunability. With the rapid development of superconducting radio-frequency technology, linacs can now operate at MHz-level repetition rates, enabling FELs with both high repetition rates and high average power. Beyond extreme ultraviolet (BEUV) radiation is of great interest for scientific research and industrial applications, especially for next-generation lithography. Owing to the main design parameters of SHINE, the generation of BEUV radiation is a natural capability of the facility. The BEUV characteristics at SHINE are investigated and its achievable performance as a high-average-power light source is evaluated. By applying undulator tapering to enhance the energy extraction efficiency, kilowatt-level BEUV radiation with controllable polarization is shown to be achievable. These results demonstrate that SHINE can provide a high-performance BEUV source, offering a realistic pathway toward a high-average-power light source for next-generation high-resolution lithography.​

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