Chinese semiconductor thread II

tphuang

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Indeed I realized the usual way is not the right approach for GPU dedicated at AI.

When there are thousand of identical very small core units in a single GPU, as is the case with modern NVIDIA, AMD, Huawei, etc, the actual yield is different.

The point is, manufacturers are able to disable defective cores on the GPU die at packaging time. One extreme case is the Cerebras Wafer Scale unit that is as big as the whole wafer!
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is shown that Cerebras's yield is always 100% (!)

This is possible because at design time some spare cores / links are reserved and are later used instead of the defective ones that are in some way isolated and disabled (I've read AMD uses electrical fuses to do this).

So let's try another approach!

Under current lithography standards, max die size is
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and is due to standard photomask of 104mm by 132mm with a 4x reduction when projected on the wafer.

So assume that our hypothetical "Max AI" chip is 26x33 = 858mm2 (if smaller, the number of dies per wafer will be higher so this is a worst case).

Now assume manufacturer can almost always "fix" the chip by disabling defected cores or by binning to lower spec. Assume only in very few cases, where the defects are in very critical no-redundancy positions on the die, we can't recover and have to scrap it. So let's assume a 95% yield (remember Cerebras is 100% using full wafer).

Under these extreme conditions we get 62 dies x 95% yield = 50 dies per wafer

It means that 1M "Max AI" chips would require 20K wafers

This is the worst case and is probably near to where NVIDIA A100 is.
keep in mind that for each Ascend chip, you may need 2 to 4 kunpeng CPUs to go along with it, which can be binned, but probably can't just disable a few cores and continue operational. Those chips would also be 400 to 500 mm2 in all likelihood. That takes quite a few wafers also
 

tokenanalyst

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With a total investment of 4.5 billion yuan, Xi'an's 8-inch high-performance specialty process semiconductor chip production line project has achieved "handover and certification"​



According to the Xi'an High-tech Government Affairs Official's WeChat account, on April 19, Xi'an High-tech Zone issued the "Land Transfer" to Shaanxi Electronic Core Industry Times Technology Co., Ltd. for the 8-inch high-performance specialty process semiconductor chip production line project using the "land transfer and certificate" model. "Bill" and "Real Property Certificate".

It is reported that the 8-inch high-performance characteristic process semiconductor chip production line project is located south of Zongyi 1st Road, north of Zongsan 3rd Road, east of Baoba Road, and west of Planning Road in Xi'an High-tech Zone. The total investment is 4.5 billion yuan. It mainly builds an 8-inch high-performance characteristic semiconductor chip production line project. After completion, the process semiconductor chip production line and supporting facilities will fill the gap in the 8-inch semiconductor manufacturing field in our province, with an estimated output value of 2.85 billion yuan.

Previous news showed that the project will complete the project registration in September 2022 and strive to be completed and put into production in 2024. After completion, the project will fill the gap in the 8-inch manufacturing field in Shaanxi Province.

It is understood that Xi'an High-tech Zone launched the pilot reform of "handling the land with the certificate" at the end of 2020, ensuring the rapid advancement of a number of social and livelihood projects and industrial projects, and injecting momentum into the construction of key projects.

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tokenanalyst

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Wattsine launched a new solid state plasma source at Semicon China 2024​

Wattsine's solid-state microwave remote plasma source system won the 7th "IC Innovation Award"​


On March 23, the "2024 Integrated Circuit Industry Chain Collaborative Innovation and Development Exchange Meeting and China Integrated Circuit Innovation Alliance Conference" hosted by the China Integrated Circuit Innovation Alliance was held in Beijing. China Integrated Circuit Innovation Alliance is a non-profit innovation organization jointly established by leading enterprises, universities, research institutes and social organizations in the entire integrated circuit industry chain. The "Seventh Integrated Circuit Industry Technology Innovation Award" (IC Innovation Award) award ceremony was held at the meeting Watersine's solid-state microwave remote plasma source (RPS) system was honored to win the 7th "IC Innovation Award" - Achievement Industrialization Award for its advanced design and excellent performance. This award recognizes the project's outstanding achievements in integrated circuit technology innovation and industrialization.
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The solid-state microwave remote plasma source (RPS) is a device used to generate plasma. It is usually used in photoresist removal, material dry cleaning, cavity cleaning, atomic layer deposition, material modification and other scenarios. RPS is the core equipment in the semiconductor and chip manufacturing process. It uses ionized fluorine to clean silicon dust deposited inside the chip structure. In the manufacturing processes of semiconductors and chips, a large amount of silicon dust will be deposited inside and on the surface of the chip as time goes by. RPS can provide a large amount of ionized fluorine to etch and clean various structures under vacuum conditions.

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tokenanalyst

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Meijie Optoelectronics AIRScan© wafer defect inspection equipment​


AIRScan© wafer defect inspection equipment is Meijie Optoelectronics' core product in the AOI field. For different process surfaces and product types in the semiconductor manufacturing process, two main products are provided, namely AIRScan3000A-Eti and AIRScan5000A-Eti . Among them, the AIRScan3000A-Eti series is aimed at semiconductor back-end blue film/sub-master ring products , while AIRScan5000A-Eti is aimed at defect detection in the front-end and middle-end semiconductor manufacturing processes . Meijie realizes 2D defect detection through the integration of software and hardware . 3D defect optional function is also supported.

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AIRScan© has multiple detection magnification options of 2X, 5X, 10X, and 20X, as well as coaxial bright field and high-bright dark field optical imaging systems, single Die multi-layer detection area division, and multiple detection parameter settings. It has D2D, D2G, and customizable traditional and Ai defect detection algorithms for comprehensive defect detection, and can output and parse industry-wide files such as Klarf and Sinf. These functions enable AIRScan© to perform precise defect detection and feedback on different process surfaces and product types, effectively improving the yield and quality of semiconductor products.

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  • AIRScan© has automatic diagnosis and calibration functions without manual intervention, saving labor and time costs. The device's built-in human-machine interface is simple and easy to use, and can realize one-click start, stop, pause and other operations. It can also display test results and statistical data in real time . These functions enable AIRScan© to achieve automated operation, improving the efficiency and stability of the equipment.​
  • AIRScan© equipment is compatible with wafers of different sizes, shapes and materials. The equipment supports a variety of communication protocols and interfaces such as SECS/GEM, etc., and can be connected with other customers' equipment and systems to achieve data sharing and transmission . These functions enable AIRScan© to adapt to different application scenarios and customer needs, improving the flexibility and compatibility of the device.​

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