What are you talking about ?
Currently the semi industry using 193 nm light source to make the ICs, but to make details as small say10nm it needs not one, but lot of ( 6/8/10) mask, to create an interference pattern.
At this point now the mask design/making cost lot of money, as I remember in the half billion $/IC design.
That is the reason why many IC design never migrated from bigger scales, the cost of move prohibitive.
And say if China wants to make ICs for low volume military application then by very high chance it will be made on 90, maybe 45 nm technology, otherwise a small volume order will have long lead time and million dollars tooling/design cost per IC.
The next generation lithography will be 13.5nm ,it doesn't multiple masking on this detail level, but the development of it is taking extremely long time, and very expensive.
And there is still many technological issue with it.
Actually, there is a big question mark if it will be possible to decrease the per transistor cost with any future technology..