Chinese semiconductor thread II

[tokenanalyst]

Jia Zhaowei of ACM Shanghai: Continuing to deepen the field of 3D chip integration​

At the 13th Semiconductor Equipment, Core Components and Materials Exhibition (CSEAC 2025) on September 4, Jia Zhaowei, Vice President of Process at ACM Shanghai, delivered a keynote highlighting the company’s advancements in 3D chip integration. He emphasized that 3D stacking has become essential for boosting performance by integrating diverse functional chips, driving demand for advanced interconnect technologies like TSV and sub-micron interconnects, especially in HBM evolution from bumping to hybrid bonding.

Challenges include mechanical stress, warpage, coplanarity issues due to chip stacking, and difficulties in plating high-aspect-ratio vias and cleaning fine structures post-flip-chip assembly. In response, ACM Shanghai has developed a comprehensive portfolio of electroplating equipment leveraging proprietary innovations: the front-end Damascus system features a dual-anode design for uniformity and edge control, while advanced packaging tools use a second-anode technology to optimize electric field distribution and reduce plating deviation.

ACM’s solutions support 28nm and above processes across TSV, advanced packaging, and third-generation semiconductors. Beyond electroplating, the company has expanded into furnaces, PECVD, and Track systems, with R&D and manufacturing bases in Shanghai and South Korea, backed by a global service network.



To meet panel-level processing needs, ACM introduced horizontal plating, edge etching, and negative-pressure flux cleaning equipment, patented solutions addressing wafer rotation control and process stability, many already in mass production.

Jia concluded that ACM is not only advancing localization but also solving industry pain points through original, differentiated technologies. The company remains committed to deepening innovation in 3D chip integration, driving technological progress, and capturing emerging market opportunities.

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[tphuang]

https://twitter.com/i/web/status/1964087310493827323

BYD recently filed patent for temperature management design on multiple processor circuit board which does not take CPU cycles away or utilize CPU resource in anyway.

 

[tokenanalyst]

TuoJing Technology Co., Ltd., demonstrated the company's "Six-Station Platform" PECVD+ALD dual engine. 3D NAND is transitioning from 128 layers to 300-1000 layers, with each ONO (oxide-nitride-oxide) layer just 20nm thick, and gas switching required within 2 seconds. TuoJing Technology's "Six-Station Platform" PECVD+ALD dual engine has reportedly increased single-chamber production capacity by 2.4 times, achieving film uniformity of ≤0.5% and particle control of <[email protected]μm, fully covering domestic mass production lines with 128 layers and above. More importantly, the platform has brought 2nm pre-research processes such as "backside power supply" and "deep trench capacitors" into the fabrication process, placing domestic thin-film equipment at the forefront of process definition for the first time.




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[tokenanalyst]

Interesting.

Sioux: Making "nano-level positioning" a domestic standard
"High-end motion control isn't about buying chips and piling up hardware; it's about standardizing 16-axis linkage, 100kHz three-ring servo, and 0.5nm position resolution," said Yan Honglei, Director of Jiangsu Jicui Sioux Technology Co., Ltd. The company's hybrid air-levitation and magnetic-levitation architecture, developed through a strategic partnership with ASML in the Netherlands, has been operating stably for three years on over 70 front-end defect inspection and overlay measurement systems in China, achieving a speed jitter of 0.01% and an overlay error of <2nm. The company is currently building a new production facility in Suzhou with an annual production capacity of 1,200 high-end motion stages. The company aims to further reduce prices to serve even more manufacturers.​

 

[tokenanalyst]

Huahai Qingke: Ion implantation machine "four consecutive jumps" to catch up with TSMC platform.​

The gap between domestically produced ion implanters and those from abroad lies not in their ability to manufacture, but in the four-dimensional consistency of dose, angle, lattice damage, and reliability. Cai Ting, Technical Director of Huahai Qingke Co., Ltd., unveiled for the first time a "triple Faraday + dual-scan + dual-chuck" ion implant closed-loop system, achieving dose error ≤ 0.5%, angle drift < 0.1°, and a 28% reduction in wafer temperature rise. The introduction of an AI-powered beam-steering algorithm also enables a first-pass success rate for the 2nm node, matching TSMC's performance.

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[tokenanalyst]

Kronos: Planar grating + zero expansion frame, making "sub-nanometer" a domestic alternative​

From 90nm platemaking to 2.5D packaging, all nanometer precision ultimately depends on the motion platform. Qu Lujie, senior consultant at Shenzhen Kronos Technology Co., Ltd., revealed that the domestically developed planar grating and zero-expansion measurement framework, co-developed with Heidenhain, has enabled 90nm platemaking platforms to achieve repeatable positioning of 35nm and overlay of 100nm, hybrid bonding alignment of 50nm, and TSV measurement with 2nm precision. The company is currently developing even higher-precision hybrid bonding platforms.

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[tokenanalyst]

Panshi Technology: Remove the "bearing" and return pumping to the "contactless" era​

"No bearings, no particles." Xu Zhi, Sales Director of Panshi Technology (Shenzhen) Co., Ltd., announced the release of a 6 kW high-power magnetic levitation bearingless centrifugal pump. This pump boasts a flow rate of 400 L/min, a control accuracy of 1-2 μm, and a lifespan of over five years of 7x24h continuous operation. It reduces particle precipitation by 90%, with "undetectable" metal ions. Compared to traditional diaphragm/bellows pumps, the maintenance cycle is extended from quarterly to annual. The pump has already been shipped in batches domestically for four major applications: 12-inch wafer cleaning, CMP, electroplating, and chemical delivery, offering a new "zero-additive" option for wet processes.

 

[tokenanalyst]

Huaxin Microelectronics has established its first 6-inch compound semiconductor production line in China​

Hi-Tech announced on its interactive platform on September 4th that its subsidiary, Zhuhai Huaxin Microelectronics Co., Ltd. (Huaxin Microelectronics), has successfully established its first 6-inch commercial compound semiconductor production line, marking a significant breakthrough for China in the field. The 6-inch gallium arsenide (GaAs) wafer production line has officially been commissioned and successfully produced the first 2-micron HBT wafer. Mass production is planned for the first half of 2025.

Huaxin Microelectronics has developed a variety of mature processes, including GaAs active and passive processes, gallium nitride (GaN) power chips and RF amplifier chips, optoelectronic sensor chips, and silicon carbide (SiC) power chips. These processes cover multiple key technical areas in compound semiconductors and lay a solid foundation for independent innovation in the domestic semiconductor industry. This production line primarily serves the production of microwave integrated circuits (MMICs) and VCSEL chips, targeting the needs of 5G communications, radar, optical communications, and new energy sectors.

The Gree Innovation Huaxin Semiconductor Park, the project's vehicle, is being built with a 3.387 billion yuan investment from Gree Group. It is a key Guangdong Provincial project and a pillar industrial project in Zhuhai, demonstrating the strategic support of local government and industry for the RF and compound semiconductor industries. Hi-Tech is highly anticipated and will continue to monitor the latest technological developments and market trends in the industry.

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