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Chinese semiconductor thread II
- Thread starter vincent
- Start date
The first wafer of Huaxin Microelectronics' first 6-inch GaAs wafer production line has rolled off the production line successfully!
Recently, Zhuhai Huaxin Microelectronics Co., Ltd. (hereinafter referred to as "Huaxin Microelectronics") announced that its first 6-inch GaAs wafer production line has been officially debugged and successfully manufactured the first 6-inch 2-micron GaAs heterojunction bipolar transistor (HBT) wafer. This major progress marks a key breakthrough for Huaxin Microelectronics in the field of compound semiconductor technology, and also lays a solid foundation for future large-scale production.
It is reported that the 6-inch GaAs wafer production line has been successfully started in the Gree Innovation·Huaxin GaAs wafer production base project invested and constructed by Huaxin Microelectronics in Zhuhai High-tech Zone, and the first batch of 6-inch 2-micron GaAs heterojunction bipolar transistor (HBT) wafers have been successfully produced. Since the start of the project, it has received active support from the Guangdong Provincial Government, Zhuhai Municipal Government and Zhuhai High-tech Zone, and has also received assistance from many partners. Huaxin Microelectronics has worked closely with design and construction units such as Gree Group to efficiently promote the construction of the project.
People mostly pay attention to mainstream semiconductors because they are "cooler" but China is building A LOT of specialty foundries, for compound semis, Imaging, VCSEL, Radhard, RF, MEMs, next gen transistors like HEMT and so on. This could have more military applications than more mainstream fabs like SMIC and HHGrace because compute power means nothing without good sensors.
In the US I can only think of two specialty foundries Skywater and XFab. In China feels is one every month.
Multiple institutions jointly launched the "Wafer-level heterogeneous integrated photonic quantum chip" project.
Wuxi Science and Technology Bureau, emphasized that the national key R&D project "Heterogeneous Integrated Photonic Quantum Chips and Multi-dimensional Control of Light Fields" is a key layout for the country to seize strategic commanding heights in the field of quantum technology. The Municipal Science and Technology Bureau will unswervingly support the sustainable development of Shanghai Jiaotong University Wuxi Photonic Chip Research Institute, actively respond to major national strategic needs, and fully guarantee the smooth progress of this key R&D project.
In the next stage, Wuxi Photonic Chip Research Institute will rely on the photonic chip pilot line to help projects achieve major breakthroughs in the field of photonic quantum chip technology, and carry out scientific and technological achievement transformation and integrated entrepreneurial incubation around new generation information technologies such as core, light, intelligence, and computing, to promote the formation of a world-class photonic chip valley innovation ecosystem with clustered and large-scale development in Binhu and even Wuxi.
MilliSense Technology's chip was successfully tested
The MVRA188 all functions have been tested and verified, and it will move towards mass production. MVRA188 is a RF front-end chip , which is the core component of millimeter-wave radar . It is understood that it accounts for more than half of the hardware cost and determines the performance of millimeter-wave radar.
Therefore, MVRA188 can bring benefits in terms of cost and performance after being installed in the vehicle .
It is reported that the number of chip channels used for 4D millimeter-wave radars in the past was relatively low, and multiple chips needed to be cascaded to increase the number of channels and the amount of information collected by the product, but the overall cost of the product would also increase accordingly. The MVRA188 integrates 8 transmitters and 8 receivers on a single chip with a high level of integration. It can simplify the system architecture and can replace the dual-chip cascade solution with a single chip, greatly reducing product costs and supporting large-scale mass production.
Then there are three major improvements in performance :
- The ADC sampling rate reaches 250Msps, which is more than 6 times that of the competing products of established radar manufacturers. A higher sampling rate means that more detailed signals can be collected .
- The single-chip interface bandwidth is improved to support the expansion of collected data brought by high sampling rate. Users can flexibly match the number of channels according to platform requirements.
- With the highest frequency modulation rate and fully digital phase-locked loop, it can cooperate with high sampling rate to expand the unambiguous speed, and can realize dynamic real-time Chirp parameter configuration, which is convenient for switching measurement modes according to different driving scenarios
β-Ga2O3 extreme ultraviolet photodetectors.
Abstract
With the advancement of technology, the demand for extreme ultraviolet (EUV) photodetectors has been increasingly growing in the fields of electronics manufacturing, space exploration, and fundamental scientific research. β-Ga2O3, with the excellent radiation resistance and thermal stability, is more suitable for EUV detection applications compared to traditional silicon materials. In this work, a β-Ga2O3 EUV photodetector with vertical Schottky barrier structure was successfully fabricated and the electrical properties were systematically tested. Under 13.5 nm EUV irradiation with a light power of 23.46 nW, the photodetector demonstrated a responsivity of 55.31 mA/W and an external quantum efficiency (EQE) of 508% at room temperature with a 0 V bias. Additionally, the photodetector exhibited fast response speed with rise time of 185.8 ns and decay times of 1.3 μs. Considering applications in extreme environments, the photodetector’s performance was evaluated within the temperature range of − 193 to 100 °C, confirming that its operational temperature range significantly surpasses that of traditional silicon photodiodes (− 20 to 80 °C). In this work, we systematically analyze the performance advantages of the β-Ga2O3 EUV photodetector, which provides an important reference for the development of radiation-resistant EUV photodetectors.
Next year, mass production of new machines will overcome technological limitations
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软通动力 (iSoftStone) developed a computer with Huawei Kunpeng CPU and Ascend AI GPU that supports 32B distilled to full blooded version depending on the specs.
Uses Ascend Atlas NPU accelerator.
the flagship one that supports full blood R1 uses 920 CPU, 910 GPU and 8 modules.