From Chinese forum:
[2024 Advanced Lithography Technology Seminar - 2024 China Optical Valley·Optoelectronic Information Industry Innovation and Development Conference-Bilibili] m web link
I mainly read two expert reports. One is Academician Chen Xuedong of Huazhong University of Science and Technology, who is responsible for the nano-precision motion control of the lithography machine, that is, compensating for various mechanical, optical, electromagnetic, and thermal errors. The main content is summarized as follows:
1. 90nm is already mature, but the market is not large. The immersion type is being debugged and is "just around the corner."
2. The vacuum active shock absorption and magnetic levitation workbench of EUV have been prototyped and meet the index requirements.
The second person is Ding Chengyuan, who is responsible for the research and development of EUV light sources at the Shanghai Institute of Optics and Fine Mechanics. From what he said, he should have worked in ASML and led the team to work on light sources. The main content is
1. The requirements for lithography machines are only to do and not to say, and the details cannot be disclosed.
2. The main difficulty of EUV relative to DUV is the light source. The biggest difficulty of the light source for China is the high-power carbon dioxide laser. At present, the latest high-power carbon dioxide laser of ASML is the most difficult to produce in China. NA is a 40kw laser. It was only a few million when the domestic 02 project was accepted. Now it has several kilowatts, which is still an order of magnitude difference. Fiber lasers cannot be used for EUV because the pulse energy is not enough.
3. Lasers are not difficult for ASML because TRUMPF lasers are already very good. At that time, the difficulty of EUV was how to shoot targets, make targets, eliminate reflections and self-excitation, clear dirt, etc., but these do not need to be re-stepped for China. The technical route is very clear, and the main thing is engineering.