Chinese semiconductor thread II

tphuang

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"We definitely can't get 3nm, we can't get 5nm, “It would be great if we could solve 7 nanometers,” he admitted. ”

“我们肯定是得不到 3nm,肯定得不到 5nm,我们能解决 7nm 就非常非常好。”
We certainly cannot get 3nm, and certainly not 5nm, it's very good that we can solved 7nm (problem).

1) "definitely cannot get 3nm, 5nm" = cannot purchase 3nm, 5nm (from Taiwan, US). It is not the same as we cannot produce 3nm. 5nm in China in future.

2) "We definitely can't get 3nm, we can't get 5nm, “It would be great if we could solve 7 nanometers,” he admitted. ” is not the same as " it's very good that we can solved 7nm (problem).". Fact: Pura 70.

Correct interpretation is important. We may see Huawei 5nm chip before end of this year.
I am really questioning whether people on this forum are actually following this issue at all

just last year, we had the same huawei deny 5g phones saying something along the line of unable to produce 5g phones without American permission

That was only a couple of months before mate 60 came out

so who in their right mind is still wasting time interpreting what some Hussein person says?

I actually don’t think they can get to n5 without euv. Maybe they get to density level comparable to Samsung lpp4 in 2 years.

but since euv project itself is under most high security clearance, we don’t hear about it other than from people close to huawei.

now if we go back to the original topic, interpreting this comment from huawei is pointless. Keep this in mind the next time you see something like this gets posted in the future
 

staplez

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I am really questioning whether people on this forum are actually following this issue at all

just last year, we had the same huawei deny 5g phones saying something along the line of unable to produce 5g phones without American permission

That was only a couple of months before mate 60 came out

so who in their right mind is still wasting time interpreting what some Hussein person says?

I actually don’t think they can get to n5 without euv. Maybe they get to density level comparable to Samsung lpp4 in 2 years.

but since euv project itself is under most high security clearance, we don’t hear about it other than from people close to huawei.

now if we go back to the original topic, interpreting this comment from huawei is pointless. Keep this in mind the next time you see something like this gets posted in the future
Well that and Huawei has now consistently denied what ever they have accomplished. The fact that you hear a denial should tell you they are close. I mean at one point they were saying they don't have 5G so it must be 4.99999G.
 

tokenanalyst

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E-Sky Semiconductor Mini/Micro LED Special Equipment Project Signed in Hubei​


Daye held a signing ceremony for the May 2024 and the second quarter investment promotion projects of Daye Lake High-tech Zone. Twelve projects with a total investment of 6 billion yuan were signed and implemented. The signed projects mainly cover electronic information, high-end equipment manufacturing and other fields, with high investment intensity, strong driving ability and good development prospects.

It is reported that the semiconductor automation equipment R&D and production project was invested and constructed by Shenzhen Yitian Semiconductor Equipment Co., Ltd., which is mainly engaged in the production and research and development of special equipment such as Mini/Micro LED mass transfer equipment and semiconductor wafer thinning equipment.​
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tokenanalyst

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A Novel Hybrid-Channel Gate-All-Around Nanosheet Transistor for Leakage Control and Subthreshold Slope Reduction​

School of Microelectronics
Fudan University
Shanghai, China

Abstract:​

We report a novel Hybrid-channel Gate-AlI-Around (GAA) nanosheet field-effect transistor (NSFET) for the first time. By introducing a reverse biased p-i-n sub-channel, the proposed Hybrid-channel NSFET is able to combine the advantages of GAA MOS channel and sub-TFET channel, achieving superior sub-channel leakage control and possible sub-60m V /dec subthreshold slope (SS), thus significantly alleviating the critical issues of parasitic channel leakage and degraded SS in conventional NSFETs. Simulated Hybrid-channel NSFET exhibits comparable leakage current level with NSFET based on Full BDI scheme, yet with excellent immunity to process variations at the same time. A steep minimum SS of 11.38 mV/dec and average SS of 36.67 mV/dec for 6 decades have also been obtained through bandgap engineering of the sub-TFET channel.​

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tokenanalyst

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The opening of Tianren Micro-Nano 100-level Laboratory​


At 10:16 am on May 20, 2024, the opening ceremony of the Class 100 clean room of the Tianren Nanoimprint Pilot Platform Phase I (NTS Center - Nanoimprint Total Solution Center) was successfully held! The clean room of the Nanoimprint Pilot Platform (Phase I) covers an area of about 1,600 square meters, including Class 100, Class 1,000 and Class 10,000, with nearly 100 equipments and a total investment of several hundred million yuan.

The equipment includes more than 30 nanoimprint equipment of various models produced by Tianren Micro-Nano, ranging from hot imprinting, transfer printing to UV imprinting, and from roller pressing to surface pressing to SR stepping imprinting. The substrate size ranges from wafer pieces to 2/3/4/6/8/12 inches, panel-level G2 and G5 sizes, and the equipment types include manual loading and unloading, cassette to cassette automatic loading and unloading equipment, as well as nanoimprint cluster production line equipment (3 units) that includes the entire process from wafer cleaning, plasma treatment, glue coating, heat treatment, automatic replication of working molds, automatic alignment, imprinting, curing, demolding, etc. In addition, various imprint process supporting and characterization equipment are complete, including wafer fully automatic RCA, organic cleaning, Plasma, HMDS, mold anti-sticking treatment and other pre-treatment equipment, various glue coating equipment, 8 semi-automatic spin-coating equipment, 3 fully automatic equipment, ink jet printing, slot die coating, slit coating, automatic dispensing of microlenses and other equipment; nanoimprint mold manufacturing equipment includes electron beam lithography, laser direct writing, mask aligner, laser interference exposure, ICP, RIBE, degumming machine, ALD, electroforming mold, wafer bonding, etc.; characterization equipment includes SEM, AFM, confocal, FIB, ellipsometer, film thickness meter, step meter, water drop angle tester, etc.

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Tianren Micro-Nano NTS Center should be the most comprehensive pilot platform for nanoimprint segment equipment and supporting process equipment in the world. Tianren Micro-Nano is equipped with more than 50 senior process engineers on this platform to provide customers with technical support, material knowhow and project experience. The goal of this pilot platform is to allow customers to realize innovative product ideas using nanoimprint-related technologies on this platform at a very low cost, from prototype to product pilot, to verify the performance of Tianren Micro-Nano nanoimprint equipment and open up the last mile for customers' future product mass production.

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tphuang

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Innoscience unveiling 3 types of GaN products

此次发布的三款氮化镓驱动器芯片,针对30V~700V氮化镓功率器件特性进行优化,是英诺赛科氮化镓驱动技术的全新扩展,不仅能够为数据中心、汽车电子、电池化成、太阳能微逆、马达驱动等领域提供高性能产品,更进一步丰富了氮化镓生态,为更多应用领域赋能。
they now have products from 30V-700V + have products for data center, auto electronics, battery, solar micro inverter and motor drive

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Geely signing LTA with ST Micro. I assume this will be supplied by the Sanan/ST JV
 
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