Chinese semiconductor thread II

tokenanalyst

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Impact of Low-n Absorber on SMO in High-NA EUV Lithography for Sub-3nm Nodes​

School of Microelectronics, Fudan University
National Integrated Circuit Innovation Center

Abstract:​

This study investigates how absorber materials and source-mask optimization (SMO) influence high-NA EUV lithography at sub-3 nm nodes. Through rigorous simulations comparing conventional TaBN and low-n high-k absorbers on 1D and 2D BEOL patterns, we demonstrate that low-n high-k materials under SMO deliver substantially wider exposure latitude and improved mask error factor, thereby enhancing process-window robustness for high-volume manufacturing.​

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tphuang

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鼎龙股份(300054.SZ)公告称,公司控股子公司潜江新材料近期在KrF/ArF高端晶圆光刻胶领域取得订单突破,两家头部晶圆厂客户合计新增订单近1000加仑。截至公告日,公司已有8款高端晶圆光刻胶获多家国内主流晶圆厂批量订单,较一季度末新增5款。公司年产300吨KrF/ArF高端晶圆光刻胶产线于2026年3月投产后,已向客户交付数百加仑产品并顺利应用。ArF与KrF光刻胶是逻辑、存储芯片制造的核心刚需耗材,属于国内晶圆光刻胶市场价值量占比最高的两大品类。
good news, looks like Dinglong's Arf/KrF photoresist is seeing significant more order. Using Gemini, this is about 250 gallons per ton. so 1000 gallons is not that much. But still, as long as they can keep getting more customers & more products sold, the sales will go up
 

tokenanalyst

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Breakthrough in AI Computing: Xi'an Institute Achieves Key Silicon Photonic Milestones​


The National Key Laboratory of Ultrafast Optical Science and Technology at the Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences, has announced a series of groundbreaking achievements in silicon photonic interconnect chips. These innovations are designed to overcome the critical "power consumption wall" and "communication wall" currently hindering the scalability of AI large models and intelligent computing centers.

The research team has developed a complete silicon photonics technology system from core devices to system integration—that directly supports Co-Packaged Optics (CPO) architecture, positioning China as a key player in post-Moore's Law computing infrastructure.

1. High-Speed Optical Receivers
  • Device: Silicon-Germanium Avalanche Photodetector (Si-Ge APD).​
  • Performance: Achieved an international-leading gain-bandwidth product of 7,564 GHz.​
  • Capability: Successfully tested for high-speed signal reception ranging from 64 Gbps to 200 Gbps, significantly boosting receiving sensitivity in optical communication systems.​
2. Advanced Optical Modulators
  • Microring Modulator: Delivered a single-channel transmission rate exceeding 400 Gbps.​
  • Mach-Zehnder Modulators (MZMs): Developed several high-bandwidth variants, including a novel serpentine structure MZM that achieves efficient electro-optical conversion within a compact area of approximately 1 mm², ideal for high-density integration.​
3. System-Level Integration & Massive Throughput
  • Multi-Channel Emission Chip: Launched a 16-channel microdisk modulator array with a large free spectral range.​
  • DWDM Capability:By integrating with quantum dot mode-locked lasers, the team realized two high-speed schemes:
    • 8-channel configuration (200 GHz spacing).​
    • 16-channel configuration (100 GHz spacing).​
  • Result: Both schemes achieved a single-fiber data throughput capability of 2 Tbps.​
4. CMOS Electrical Support Chips
  • Technology Node: Developed at the 28nm CMOS process level, specifically designed for 3D integration with silicon photonics.​
  • Bandwidth: Transmit and receive bandwidths both exceed 60 GHz.​
  • Efficiency: Supports 200 Gbps PAM4 transmission and 280 Gbps reception, achieving an excellent energy efficiency of 0.67 pJ/bit and a density of 4.9 Tbps/mm².​
These advancements mark a pivotal shift in semiconductor development trends, aligning with concepts like Huawei's "Tao (τ) Law," which emphasizes moving away from geometric miniaturization toward latency compression. The developed components are directly adaptable to CPO architecture, allowing for compact packaging and low latency. As a single-engine solution exceeds 2 Tbps throughput with low power consumption, these chips address the bottleneck of traditional electrical interconnects in next-generation AI clusters. This release underscores China's continued breakthrough capabilities in high-end silicon photonic technologies, securing its position in the foundational layer of future supercomputing and AI infrastructure.

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