I think it's just talking about for this particular design. Instead of using Aluminum nitride thin film, use diamond thin film. They already have succeeded in this in other applications.Regarding this comment in the same piece on replacing AlN with diamond by this Xidian team:
"研究团队的目光已经投向更远处。氮化铝固然优秀,但还有像金刚石这样导热性能更强的终极材料。“如果未来能将中间层替换为金刚石,器件的功率处理能力有望再提升一个数量级,达到现在的十倍甚至更多。”当然,这需要另一个周期的长期攻关,或许又是一个“以十年计”的科研征程。这种对材料极限的持续探索,正是半导体技术不断向前发展的核心动力。"
Chinese scientists, from Shandong University IIRC, have already figured out how to make diamond substrate for RF ICs. Is what this Xidian team talking about a different way of making use diamonds in RF ICs?
For example here is 4-inch free standing diamond film