Chinese semiconductor industry

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tphuang

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sunnymaxi said:
Neither i m professional expert..

SMIC 7nm has 115 MTr/mm2 .. which is better than intel 7nm process.

so how can you say this, SMIC will catch up with Intel by 2028. more or less SMIC is now equivalent to intel..

as of now, only TSMC and SS is ahead. but by end of this decade, SMIC will be equivalent with TSMC..
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I would concern myself a little less with catching up, because that seems to be difficult. more important is whether or not they can develop consistent yield with advanced process using de-americanized tools. After all, Huawei showed with 9000S that you can get something pretty good without havng the latest process.

Also, based on what hvpc said, 115 MTR/mm2 is a little ambitious. I'd guess something between 100-110 based on what I've read.

but more important than that, the question is whether they can move at faster cadence than people they are chasing. Well, that goes beyond just technical. There are economic considerations also. For example, whether you can justify paying 25% more for 20% greater transistor density if the actual number of usable non-SRAM transistors increase by a much smaller amount. As we saw with recent A17, the performance improvement over A16 just wasn't there. It was all achieved by higher power consumption and just larger die and more core, not through improved process.

so for SMIC, the goal is to just steadily improve every year until EUV becomes available. Maybe they get something better than N7+ next year and something around Samsung 4LPP the year after If they can get EUV handed over in 2025 to work with other domestic tools, then they can take a year or so to get process worked out and then starting to fab real 5nm process sometimes in 2026. That would be the goal.
 
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anyways, now nanoreview has Kirin 9000S details up, you can compare it to kirin 9000

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You don't necessarily need the best process out there if you are willing to tolerate a little worse power consumption. Looking at CPU performance on geekbench, 9000S basically beats out 9000 in all the CPU related categories

Where it's weak on is GPU, which is something Huawei needs to improve in
 
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200 mm 4H-SiC high quality thick layer homoepitaxial growth​


Core tip: Currently, SiC devices have been widely used in key components such as the main drive and OBC of new energy vehicles, effectively reducing the switching speed, reducing energy loss, and reducing the weight of the entire vehicle.
Currently, SiC devices have been widely used in key components such as the main drive and OBC of new energy vehicles, effectively reducing and increasing the switching speed and energy loss, reducing the weight of the vehicle and improving the cruising range. Automotive applications are developing rapidly and the market is vast. Under the strong demand from the new energy industry, the global SiC industry has entered a period of rapid growth and the market is growing rapidly.

Recently, the 9th International Third Generation Semiconductor Forum (IFWS) & the 20th China International Semiconductor Lighting Forum (SSLCHINA) were held in Xiamen. During the period, at the "Silicon Carbide Substrate, Epitaxial Growth and Related Equipment Technology" session, Zhang Yongqiang, Product Director of Hebei Puxing Electronic Technology Co., Ltd., shared the latest research progress on 200 mm 4H-SiC high-quality thick-layer homoepitaxial growth.

Puxing Electronics started SiC research and development in 2016, achieved mass production of 6-inch SiC epitaxial wafers in 2019, and won the bid for the silicon carbide epitaxial industrialization project of the Ministry of Industry and Information Technology in 2021. At present, they are mainly 1200V MOS products, which have passed vehicle regulation level verification and are used in main drive modules of new energy vehicles.
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8-inch epitaxy is the development trend of silicon carbide epitaxy technology. The report shows that the new 8-inch silicon carbide epitaxial wafer product recently developed by Puxing Electronics has solved the difficulties of 8-inch substrates such as high stress, easy cracking, epitaxial uniformity and difficult defect control. The thickness uniformity is 0.6% and the concentration uniformity is 2.3%. The uniformity of 8-inch products has reached a level comparable to that of 6-inch mass-produced products.

Puxing Company is the earliest unit in the research of epitaxial materials in China. It currently has an annual silicon epitaxial production capacity of 7 million wafers, of which 2 million are 8-inch silicon epitaxial wafers. The annual production capacity of 6-inch silicon carbide epitaxial wafers is 150,000 wafers; it is expected that by 2024, the annual production capacity of 6-inch silicon carbide epitaxial wafers will expand to 360,000 wafers; by 2025, the annual production capacity of 8-inch silicon carbide epitaxial wafers will expand to 6 to 80,000 pieces.​
 
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tokenanalyst said:

200 mm 4H-SiC high quality thick layer homoepitaxial growth​


Core tip: Currently, SiC devices have been widely used in key components such as the main drive and OBC of new energy vehicles, effectively reducing the switching speed, reducing energy loss, and reducing the weight of the entire vehicle.
Currently, SiC devices have been widely used in key components such as the main drive and OBC of new energy vehicles, effectively reducing and increasing the switching speed and energy loss, reducing the weight of the vehicle and improving the cruising range. Automotive applications are developing rapidly and the market is vast. Under the strong demand from the new energy industry, the global SiC industry has entered a period of rapid growth and the market is growing rapidly.

Recently, the 9th International Third Generation Semiconductor Forum (IFWS) & the 20th China International Semiconductor Lighting Forum (SSLCHINA) were held in Xiamen. During the period, at the "Silicon Carbide Substrate, Epitaxial Growth and Related Equipment Technology" session, Zhang Yongqiang, Product Director of Hebei Puxing Electronic Technology Co., Ltd., shared the latest research progress on 200 mm 4H-SiC high-quality thick-layer homoepitaxial growth.

Puxing Electronics started SiC research and development in 2016, achieved mass production of 6-inch SiC epitaxial wafers in 2019, and won the bid for the silicon carbide epitaxial industrialization project of the Ministry of Industry and Information Technology in 2021. At present, they are mainly 1200V MOS products, which have passed vehicle regulation level verification and are used in main drive modules of new energy vehicles.
View attachment 122891
8-inch epitaxy is the development trend of silicon carbide epitaxy technology. The report shows that the new 8-inch silicon carbide epitaxial wafer product recently developed by Puxing Electronics has solved the difficulties of 8-inch substrates such as high stress, easy cracking, epitaxial uniformity and difficult defect control. The thickness uniformity is 0.6% and the concentration uniformity is 2.3%. The uniformity of 8-inch products has reached a level comparable to that of 6-inch mass-produced products.

Puxing Company is the earliest unit in the research of epitaxial materials in China. It currently has an annual silicon epitaxial production capacity of 7 million wafers, of which 2 million are 8-inch silicon epitaxial wafers. The annual production capacity of 6-inch silicon carbide epitaxial wafers is 150,000 wafers; it is expected that by 2024, the annual production capacity of 6-inch silicon carbide epitaxial wafers will expand to 360,000 wafers; by 2025, the annual production capacity of 8-inch silicon carbide epitaxial wafers will expand to 6 to 80,000 pieces.​
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btw, really cool to see this. Production increases is quite significant. 360k 6-inch by 2024 and another 60-80k in 8-inch Sic wafers. There is just so much substrate capacity coming on the market now

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Another project called 汉轩车规级功率器件制造项目 has started construction

1.5B RMB
60k wpm of power chips producing SBD, FRD, SGT, IGBT, SIC MOS.
so many of these power chip projects
hard not to see the prices coming down significantly
 
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tamsen_ikard said:
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Is this DUV tool capable of immersion lithography and thus able to produce 7nm?
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don't overthink it. They are not short on NXT2050i and such. They just need this thing to be qualified for 14nm in a year or so. Then domestic fabs can use it for 40/28/22/14nm process. This is an iterative process where they will continue to improve it. So eventually, I'm sure it can be used in 7nm process.

But given where we think EUV project is, I'm more interested in seeing this reliably operating in HVM and generating comparable yield to a process using ASML scanners. And that will take time. Otherwise, you basically loose money when you use this scanner
 
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Shengmei Shanghai: Track equipment is expected to complete the docking process test with the photolithography machine in the middle of next year​


According to Jiwei.com news on December 21, the latest research minutes of Shengmei Shanghai stated that the company's Track equipment is currently being successfully verified on the client side, and it is expected to complete the docking process test with the lithography machine in the middle of next year; in addition, the company is also Continuously expand new customers, and currently have many customers in negotiation. Next year the company will focus on KrF equipment entering the market, and the company will also develop immersed ArF equipment.

Shengmei Shanghai expects that the company's cleaning equipment revenue will continue to grow next year. Coupled with the company's electroplating and furnace tube equipment, the company is optimistic about next year's performance, the company's PECVD equipment and Track equipment will begin to achieve sales revenue , it is expected that as the market for these two devices continues to expand, it will once again promote high growth in the company's performance. In the longer term, the company's performance growth will benefit from the continuous expansion of overseas markets. Shengmei's long-term goal is to share half of its revenue from domestic and overseas markets.

Regarding product market share, Shengmei Shanghai said that the company currently occupies about 30% of the market share in the domestic electroplating market. From a global market perspective, the electroplating market is large and is growing rapidly. At present, the company's copper plating equipment in the front line has received overseas demo orders, and the company's copper plating equipment is also developing markets in Europe, the United States, Singapore and other places.​

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