Chinese semiconductor industry

Yixin Integrated Circuit, on December 12, the commissioning ceremony and industry docking meeting for the semiconductor advanced packaging project of Yixin Integrated Circuit (Yiwu) Co., Ltd. (referred to as "Yixin Integrated") was held in Yiwu.

It is reported that the Yixin integrated factory will start construction in July 2022, covering an area of 70 acres, with a total construction area of approximately 49,900 square meters. The first phase of the factory will be completed in November 2023. Trial production is currently underway, and further operations are planned in 2024. Purchase equipment to expand production.

Information shows that Yixin Integration is a joint venture between SMIC Juyuan and Malaysian listed company Inari Meichang Group, with a registered capital of 1.691 billion yuan. It is committed to becoming a domestically advanced and high-tech RF front-end module system-level advanced packaging, Design and manufacturing platform for filter wafer level packaging and chip level packaging.​

,Nari Semiconductor independently developed1200V/40mΩ The SiC MOSFET device (NCM40S12T4K2) successfully passed the AEC-Q101 automotive grade reliability certification, which not only verified Nari Semiconductor’s second-generation SiC MOSFET The reliability of the process platform has also laid a solid foundation for other SiC MOSFET products that will be mass-produced soon, marking that the quality of Nari Semiconductor products has reached international standards. Its leading level has laid a solid foundation for its market expansion in the field of new energy vehicles.

Nari Semiconductor NCM40S12T4K2 is designed with automotive grade standards and adopts low specific conductance micro-cell chip structural design technology, which has the following advantages:

● Specific on-resistance Ron,sp is as low as3.1mΩ·cm2, yield 90%, reaching the international first-class level;

● The product has passed HTRB, HV-H3TRB, etc.reliability test;

● New gate oxide process and electric field suppression equalization technology: compatible15V/18V technology platform, Ensure the high reliability of HTGB.

In terms of product structure, the second-generation SiC MOSFET is the same planar gate MOSFET as the first-generation product, but the process has been further optimized, which will:

● reduces the device specific on-resistance by about 25%, and significantly reduces switching losses, Improve system efficiency.

● Can withstand operating junction temperaturehighup to 175℃, in comparison with similar products, its specific on-resistance is lower, switching loss is smaller, switching speed is higher, and parasitic capacitance is lower.

● The second generation SiC MOSFET products still maintain high reliability and strong robustness, and have performed well in reliability certification, dynamic and static tests and other evaluations Excellent.

Today, the 8-inch SiC ingot stripping production line of General Intelligent Equipment Co., Ltd. was officially delivered to customers!

In recent years, silicon carbide (SiC) power devices have continued to increase their share in the high-power semiconductor market and are used in a range of applications, such as new energy vehicles and urban rail transit, wind power generation, high-speed mobile communications, IoT, etc.

Due to its high hardness and brittleness, silicon carbide has a bottleneck in the field of SiC device manufacturing: the ingot dividing process. At present, SiC ingots are mainly cut by mortar wire/diamond wire, which has low efficiency and high loss. General Intelligence uses laser hidden cutting technology to complete the SiC ingot segmentation process and successfully achieves mass production of 8-inch silicon carbide ingot stripping equipment.