That's just not true. Let's look at ASML website. No where does it say rated for 7nm. Instead it says less than 38nm.
And no one is calling the 2050i a 7nm rated lithography machine, particularly since no one uses it for such besides SMIC. So the ratings are definitely not 1:1. Unless ASML itself is lying to us. Which would be super weird since that would be saying their machines do worse than they can.
You are clearly confused on many points.
1. 38nm is in reference to its minimum resolution.
2. NXT2050 was created targeting 5nm application in particular for secondary layers that complements the most critical EUV layers. It was not created specifically for China like this forum falsely identified it to be.
3. ASML would not identified their scanner and tied them to a specific node. What I’m trying to tell you is each model meets the minimum requirements needed to fulfill each specific node. E.g. the minimum configuration of 28nm is a NXT:1950, you can use anything more advanced. The minimum config for 10nm is NXT1980, etc.
NXT1950 is not capable to support the on product requirements of 20nm, so NXT1960 was created to add features and capabilities to serve 20nm node.
NXT1960 is not adequate for 16nm node (and D1x) requirements so NXT1970 with even more capabilities specifically to serve 16nm was created…etc, etc.
Every node has a specific in product performance requirement to match the feature size on the wafer. Let’s take overlay requirements, if you take the On Product Overlay requirements per node and match it to the minimum scanner model configuration, you’ll end up with what I shared. The issue here is most if not all of you have no idea what actual fabrication requirements per node are, so you are trying to make argument based on incorrect assumption that differentiation is between something simple as single and double patterning capability.
don’t worry about it…just ignore what I said as this sort of detail don’t really apply to what you need. Sorry I ever mention it.