What do you disagree with? Where did I write SSMB-EUV uses tin drops? why is decoherence necessary?SSMB-EUV does not use tin drops, it can directly output 5-100nm wavelength. No tin contamination.
Laser decoherence is not difficult.
if you can get a mini synchrotron, you can get a SSMB EUV tool up. Full sized synchrotrons can get kW level output. The disadvantage is size. Even mini synchrotrons are still much bigger than current LPP sources, but I actually don't think that's such a dealbreaker.With all the advantages of a synchotron light source, how much simpler (and cheaper) can the scanners be made? Since an SSMB light source EUVL instrument can do without a number of the complex systems current EUVLs need what would the core components be in a machine using SSMB?
5x20 meters mentioned above, but still bigger than 1.5 m OD that the LPP EUV chamber takes (reportedly).
Here's the complexities of the tin method:
1. 100 kW CO2 laser weighing 17k tons.
2. Droplet targeting mechanism to focus on 20 um sized droplets.
Unique concepts in nozzle design and material purity in sub-20-µm droplet extraction highlight the importance of cooperating closely with droplet generator subsuppliers. The algorithms and control needed to acquire, track and impact these targets at 100 kHz are nontrivial but well along in development and execution.
3. Metal debris mitigation is extremely complicated because there's both ionized tin and neutral vaporized tin.
The unavoidable result of tin ionization is debris created by ions, neutrals and potential tin fragments. Without an effective strategy for avoiding and eliminating debris, the collector mirror quickly becomes contaminated. Its effective lifetime and availability are reduced, and the cost of ownership increases. As little as 1 nm of deposition is estimated to reduce reflectivity by 10 percent, a likely trigger for mirror replacement.
Proper droplet size and an independent prepulse can avoid fragments and maximize ionization. Magnetic ion guiding, now a proven method, is used to mitigate debris. In the EUV chamber’s vacuum environment, ionized tin atoms are guided to the tin catcher by a magnetic field, created by placing superconducting magnets on either side of the chamber (see Figure 4). The magnets are well integrated with the source in terms of both size and safety.
To minimize the deposition of tin neutrals on the mirror, a chemical cleaning process involving a common gas at low pressure is used. Sweeping away debris magnetically, well away from the collector mirror, is not only a low-risk technique but also permits a very small chamber design and a mirror diameter of just 400 mm. There is no need for extra-large vessels or high gas flows to protect the collector mirror, especially in this vacuum area. This type of EUV chamber need stand only about 1.5 m – significantly smaller in dimension and volume than discharge-produced plasma or other LPP designs.
What still has to be kept:
1. Beam transport mechanism.
2. Exposure and mask management mechanism.
3. Wafer stage.
4. Wafer chamber cleanup mechanism (EUV is highly reactive and causes photopolymerization of organic gases even at high vacuum).