Chinese semiconductor industry

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tokenanalyst

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what? you still need tin droplets generator with LPP right? but who else could be developing tin droplets generator other than SIOM?
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They are also proposing a kind of type of tin droplet "nano" generator with high efficiency. Let see how this will develop in the future.
View attachment 98058

Generation of the small tin-droplet streams with a manipulable droplet spacing via the forced velocity perturbation​

Luo Jun (罗俊)
Lyu Shengnan (吕胜楠);
Qi Lehua (齐乐华);
Li Ni (李霓)


Research and Development Institute of Northwestern Polytechnical University in Shenzhen, School of Mechanical Engineering, Northwestern Polytechnical University

In extreme ultraviolet (EUV) sources, small tin droplets are scattered into the tin mist/disk under the irradiation of the pulsed laser to produce the EUV light. Small droplet size and large droplet spacing are required to suppress debris production to protect expensive collector mirrors. To this end, a tin-droplet generator with a capillary glass nozzle was designed and built to produce uniform tin-droplet streams with the droplet diameter less than 50 μm. Meanwhile, a forced perturbation, generated by a sandwich piezoelectric transducer, was loaded into a liquid tin jet to manipulate the droplet spacing through a stepped rod. The mono-sized tin-droplet streams with an average diameter of 42 μm were successfully produced in both the Rayleigh and the forced jet breakup regimes. A two-dimensional (2D) axisymmetric model was proposed to reveal the influence of the velocity perturbation amplitude on jet breakup patterns at different wavelengths. An F*–λ* (The dimensionless perturbation velocity amplitude F*–The dimensionless wavenumber l*) map was built, and five different droplet breakup patterns were identified based on simulations. Numerical simulations indicated that the droplet spacing could be increased by providing extra momentum to droplets from the forced velocity perturbation. Finally, by increasing the velocity perturbation amplitude, the droplet spacing was increased from ∼9Dd (droplet diameter) to ∼19Dd without significantly increasing the droplet size. This work provides a novel approach to obtaining small mono-sized tin-droplet streams with manipulable droplet spacing.

View attachment 111533View attachment 111534

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tphuang

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lol, a little mind blowing to think about

JAC unveiled using Kirin 9610A chip for its Harmony cars which apparently provides 200k DMPIS, 2x Snapdragon 8155 that most EVs are using and about same as Snapdragon 8295.

No idea how much GPU & NPU computation it has, but quite impressive that a 14nm chip performs as well in the most important criteria as a 5nm chip
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More on this. Remember this again, Kirin 9610A with 2x Snapdragon 8155 computation with first car coming out later this year with it. Previously, they were using stocked up Kirin 990A and Kirin 920A

It seems to me by now, Hisilicon had a lot of experience designing SoCs & NPUs. The big breakthrough from what I can see in terms of chip design from Hisilicon on Kirin 9000S is just the new Taishan core & Maleeon GPU. I could see 9000S improving quite a bit in terms of power consumption with just improved firmware support
i am more curious if the production line is fully de-Americanized. SMIC has a lot of Applied materials and Lam research equipment, it would be a huge deal if it can be produced without using US equipment.
not the ones producing N+2.
The goal is to have de-americanized 28nm this yr & probably 14nm early next yr
Once SN2 opens up, domestic tools will hopefully be fully validated with NXT2050i/2100i on N+2 process.

Then you have maybe 25k 12/14nm capacity & close to 10k N+2 capacity in N+1. The former supports all the chips that don't need cutting edge chip tech like SoC for smart wearables/ear buds/TVs, cockpit SoC and such

N+2 capacity reserved for HPC & phone SoC.

Let's do some calculation. If each Kirin is just 110 mm^2, then you can have 530 die per 12-inch wafer
Use 75% yield, that's 400 good Kirin chip per wafer

if they can dedicate 7k wpm to phone soc, that's 2.8 million kirin per month or 33.6m/year

mind you, that's not enough for all Huawei phones, so still good to have snapdragon 8 4G chips around for 4G versions. Maybe you also have to make some lower end stacked 14nm SoCs for entry phones like Enjoy series

But looks like at least all of the Nova phones are going with kirin now. That's pretty huge business not going to Qualcomm & TSMC every year at all. And going to stay in house with Huawei & SMIC

By 2025, if you get that up to 20k wpm of N+2 or N+2 advanced. Then you have enough to supply 100m phones/year. That will truly be the return of Huawei.

Until then, production is still limited.
 

tokenanalyst

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China Resources Micro: Chongqing 12-inch production capacity increased, Shenzhen 12-inch production line will be completed by the end of next year​


China Resources Micro's latest investor relations activity table information shows that in terms of wafer manufacturing, the production capacity of China Resources Micro's 6-inch production line has reached 230,000/month, the production capacity of 8-inch production line is 140,000 pieces/month, and the production capacity of 12-inch is at In the stage of rapid volume increase, it is expected to be 20,000-25,000 pieces/month by the end of the year.
In terms of the layout of the 12-inch production line, CR Micro said that the Chongqing 12-inch production line focuses on power devices, and the products are mainly MOSFETs and IGBTs. Among them, MOSFETs focus on the layout of medium and low-voltage advanced trench MOS and high-voltage super-junction MOS. The current product verification speed and The ramp-up progress of the product is going on as planned, and it is expected to reach 20,000 pieces by the end of the year, and strive to reach 25,000 pieces. The production capacity is expected to reach 30,000 pieces next year, and strive to reach 35,000 pieces. The Shenzhen 12-inch line is expected to be completed by the end of 2024, focusing on 40-90nm characteristic analog power IC products. Key products, one is related to power supply, including power drive, battery protection, etc., and the other is microcontroller, including MCU, etc.
Regarding the layout of the third-generation semiconductors, CR Micro said that the third-generation wide-bandgap semiconductors silicon carbide and gallium nitride have both scaled up. In the first half of this year, the sales revenue of silicon carbide and gallium nitride products increased by about 3.6 times year-on-year. The growth rate in the second half of the year will continue to increase.
In terms of downstream applications, silicon carbide products are mainly used in automotive electronics, charging piles, industrial power supplies, photovoltaics, energy storage, etc. SiC diodes, SiC MOSFETs, and SiC module products have entered automotive electronics applications. Gallium Nitride products are mainly used in PC power supply, motor drive, lighting power supply, and mobile phone fast charging. In the fields of communication, industrial control, lighting, and fast charging, we work closely with leading customers in the industry, and the products have entered the stage of mass supply.

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tphuang

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China Resources Micro: Chongqing 12-inch production capacity increased, Shenzhen 12-inch production line will be completed by the end of next year​


China Resources Micro's latest investor relations activity table information shows that in terms of wafer manufacturing, the production capacity of China Resources Micro's 6-inch production line has reached 230,000/month, the production capacity of 8-inch production line is 140,000 pieces/month, and the production capacity of 12-inch is at In the stage of rapid volume increase, it is expected to be 20,000-25,000 pieces/month by the end of the year.
In terms of the layout of the 12-inch production line, CR Micro said that the Chongqing 12-inch production line focuses on power devices, and the products are mainly MOSFETs and IGBTs. Among them, MOSFETs focus on the layout of medium and low-voltage advanced trench MOS and high-voltage super-junction MOS. The current product verification speed and The ramp-up progress of the product is going on as planned, and it is expected to reach 20,000 pieces by the end of the year, and strive to reach 25,000 pieces. The production capacity is expected to reach 30,000 pieces next year, and strive to reach 35,000 pieces. The Shenzhen 12-inch line is expected to be completed by the end of 2024, focusing on 40-90nm characteristic analog power IC products. Key products, one is related to power supply, including power drive, battery protection, etc., and the other is microcontroller, including MCU, etc.
Regarding the layout of the third-generation semiconductors, CR Micro said that the third-generation wide-bandgap semiconductors silicon carbide and gallium nitride have both scaled up. In the first half of this year, the sales revenue of silicon carbide and gallium nitride products increased by about 3.6 times year-on-year. The growth rate in the second half of the year will continue to increase.
In terms of downstream applications, silicon carbide products are mainly used in automotive electronics, charging piles, industrial power supplies, photovoltaics, energy storage, etc. SiC diodes, SiC MOSFETs, and SiC module products have entered automotive electronics applications. Gallium Nitride products are mainly used in PC power supply, motor drive, lighting power supply, and mobile phone fast charging. In the fields of communication, industrial control, lighting, and fast charging, we work closely with leading customers in the industry, and the products have entered the stage of mass supply.

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there was a clown article on FT about how much overcapacity there is in battery

Wait until they find out just how much power chip capacity is coming online with Si MOSFET/IGBTs as well as SiC products. All these western companies claiming they will capture 30% market share and continue to dominate the Chinese automotive supply chain are in for a rude awakening.

CR Micro with a lot of capacity here. Get to 40k 12-inch power chips/month -> that's equivalent to 90k 8-inch wafers
 

siegecrossbow

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Bro you need a white man to make it credible, as the Western MSM saying goes behind every successful Chinese endeavor is a Caucasian. ;)

Why Gordon Chang gave the China Collapse Theory to Peter Zeihan for free.

So uhhh, it's actually working. Can't be this easy can it?

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"Without access to advanced equipment and spare parts from suppliers like ASML, Applied Materials, KLA, and Lam Research, SMIC may be unable to build chips for its customers using its latest fabrication technologies, so it is reasonable to remove its 14nm platform from
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."

...

"SMIC has been using 14nm-class production techology since the end of 2019 at its SN1 facility. One of the 14nm SoCs the company produced is Huawei's HiSilicon Kirin 710A. However, despite technically being in mass production, it looks like 14nm volumes were so limited that the company stopped disclosing the revenue attributed to this node. Instead, it combined it with the earnings from the 28nm node, which has not been a significant revenue contributor either."

LMFAO.

very strong rumors on Weibo from trusted accounts Kirin 5G chip returning back at the end of this year with SMIC N+1. and we have seen domestic companies made breakthrough in indigenous BAW filter to produce 5G chip in mainland.

@olalavn saying 5G kirin chip is in testing process with SMIC N+1 ..

Chinese firms working on RF local supply chain.


N+2 not N+1 but close enough.

SMIC is so criminally under valued

I think it has to do with the fact that it has a lot of Taiwanese talents who are ambivalent about the Mainland other than the juicy paycheck.
 

pbd456

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More on this. Remember this again, Kirin 9610A with 2x Snapdragon 8155 computation with first car coming out later this year with it. Previously, they were using stocked up Kirin 990A and Kirin 920A

It seems to me by now, Hisilicon had a lot of experience designing SoCs & NPUs. The big breakthrough from what I can see in terms of chip design from Hisilicon on Kirin 9000S is just the new Taishan core & Maleeon GPU. I could see 9000S improving quite a bit in terms of power consumption with just improved firmware support

not the ones producing N+2.
The goal is to have de-americanized 28nm this yr & probably 14nm early next yr
Once SN2 opens up, domestic tools will hopefully be fully validated with NXT2050i/2100i on N+2 process.

Then you have maybe 25k 12/14nm capacity & close to 10k N+2 capacity in N+1. The former supports all the chips that don't need cutting edge chip tech like SoC for smart wearables/ear buds/TVs, cockpit SoC and such

N+2 capacity reserved for HPC & phone SoC.

Let's do some calculation. If each Kirin is just 110 mm^2, then you can have 530 die per 12-inch wafer
Use 75% yield, that's 400 good Kirin chip per wafer

if they can dedicate 7k wpm to phone soc, that's 2.8 million kirin per month or 33.6m/year

mind you, that's not enough for all Huawei phones, so still good to have snapdragon 8 4G chips around for 4G versions. Maybe you also have to make some lower end stacked 14nm SoCs for entry phones like Enjoy series

But looks like at least all of the Nova phones are going with kirin now. That's pretty huge business not going to Qualcomm & TSMC every year at all. And going to stay in house with Huawei & SMIC

By 2025, if you get that up to 20k wpm of N+2 or N+2 advanced. Then you have enough to supply 100m phones/year. That will truly be the return of Huawei.

Until then, production is still limited.
Wonder if the new type of finfet has been used for 9000s, also, what happen to stacking of chips? Those tricks will be reserved for other products?
 

Schmoe

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Is it safe to say that China can now manufacture chips for Huawei 5G towers? I thought they required 7nm chips and RF antennas had been bottleneck.
 
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