Chinese semiconductor industry

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tonyget

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who are the GaA players in China? Looks like these guys among non-CETC firms

Sanan, Lion electronics, Unicompound SemiconductCorporation, ChemSemi

ChemSemi
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started production on a rf filter production line of 20k wpm earlier this year
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Their GaA line produces 24k GaA wafers per year. so not a lot

These are the power amplifier suppliers

Lansus, Smart Micros, KxComtech (major Wifi Fem supplier)

actually KxComtech got big fast
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from the look of this, it had revenue of 420m RMB in 2022, big jump from 80 million in 2020

and

Vanchip, Onmicros also on top of those 3


Without mature RF filter foundry before, Maxend and other RFE companies worked to build production line with SMIC Ningbo, SMIC Shaoxing & Sai Micros. Key MEMS foundries

I thought GaAs would be replaced by GaN,seems like that's not the case now
 

tokenanalyst

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CD-SEM equipment developer, Qingtian Hengren received Pre-A round of financing​


Qingtian Hengren Intelligent Technology Co., Ltd. (referred to as "Qingtian Hengren") announced the completion of the Pre-A round of financing, which was jointly invested by Fangfu Venture Capital and Mingde Investment.
Qingtian Hengren was established in 2022 with a registered capital of 1.25 million yuan. It is a developer of CD-SEM equipment for semiconductor front-end electron beam measurement. It is committed to developing and producing CD-SEM equipment that completely replaces Hitachi CG5000.
According to the news from Zhongguancun Synergy Fund, Dr. Zhao, the founder of Qingtian Hengren, said: "The core underlying problem in the development of CD-SEM equipment is how to use scanning electron microscopy to measure insulators (photoresist) without damaging the photoresist. The core bottom-level problems are nested with a large number of non-core theoretical and technological problems that need to be dealt with. These problems are mutually restrictive, so the bottom-level problems of CD-SEM equipment need to be solved for at least several years, even ten years or decades. Only the bottom-level Only by solving the core problems and a large number of non-core problems can we see the whole picture of CD-SEM equipment. If you start to develop CD-SEM equipment without seeing the whole picture of CD-SEM equipment, you can only develop a pile of scrap iron. "​

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tokenanalyst

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Shanghai Semiconductor Equipment Materials Phase II Fund completed the first pass of 1.5 billion yuan


Shanghai Semiconductor Equipment and Materials Industry Investment Management Co., Ltd. (referred to as “Semiconductor Management Company”) officially announced that it has completed the first round of the new phase of the fund, with a scale of 1.5 billion yuan, and has invested in China Base The association completed the filing and started the first batch of project investment.
It is reported that the fund is the second-phase private equity investment fund of Shanghai Semiconductor Equipment Materials (hereinafter referred to as the "second-phase fund"), with a target scale of 2 billion yuan. It will continue to deepen the field of semiconductor equipment, materials, and parts with a broad market space and strong demand for domestic substitution. At the same time, it also takes into account the upstream and downstream related fields of the semiconductor industry chain such as semiconductor design, digital economy, artificial intelligence, and new energy.
The Phase II fund management team is the first group of professional teams in China to invest in the integrated circuit industry, and has successful and rich experience in investment and mergers and acquisitions in the semiconductor field. The first phase of the fund managed by the team is 5.05 billion yuan. In the past four years, it has invested in a total of 35 projects focusing on semiconductor equipment, materials, components, and upstream and downstream. STI, a leading testing equipment company in Singapore (merged into Changchuan Technology, a listed company), and SPT in Switzerland, a leading company in global semiconductor semiconductor ceramic choppers.

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tokenanalyst

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The total investment is 28.8 billion yuan! 12 key projects started intensively in Lingang, Shanghai​


The first phase project of packaging and testing of finished chip manufacturing of Changdian Automobile
The total planned land area of the project is 210.2 mu. It is an important measure for JCET to focus on the high value-added application market of automotive electronics and serve global customers. It will cover smart cockpit, smart interconnection, safety sensors and modules in the "new four modernizations" field of automotive semiconductors. Packaging types, covering traditional packaging, future-oriented module packaging and system-in-package products, including sensors, main control chips, memory chips, power devices, analog chips, etc., to provide global customers with high reliability standards for electric vehicles and automatic Driving and other semiconductor packaging and testing products and services.

Awinic's vehicle-level reliability test center construction project
The total investment of the project is 1.7 billion yuan. The project covers an area of 27,200 square meters. There are two single buildings and two reception rooms. The main building is the R&D building, and the auxiliary building is the R&D supporting building. The project conducts reliability tests on the performance of automotive-grade integrated circuits such as temperature shock, temperature cycle, high-temperature storage, high-temperature operation, low-temperature storage, low-temperature operation, and PCT; it also conducts IC performance test analysis, failure analysis of uncapping and delamination, etc. , Carry out wafer grinding, slicing, wire bonding, plastic packaging, testing and other rapid packaging and proofing for automotive-grade chips, and strive to create high-quality automotive-grade chips.
PetroChina Shanghai Research Institute Technology R&D Center Project
The total investment of the project is about 2.065 billion yuan, and the land area is 20,624.1 square meters. The ground is mainly used for scientific research experiments, scientific research offices, etc., and the underground is used for parking garages and equipment rooms for energy stations serving surrounding plots. The project will establish a three-in-one organizational structure management model with the R&D center as the main body and the support center and cooperation center as the support. In the future, it will become "one research institute" responsible for industrial scientific research work, and "N project companies" responsible for industrial production and marketing operations. The new research and development institution is expected to have a staff size of about 1,000 people. The project will be mainly engaged in the technical research and development and industrialization of new materials such as high-end carbon materials, new energy materials (hydrogen storage materials), new electronic information materials, and bio-based materials.

Semiconductor advanced process equipment research and development and industrialization projects

The project is a new research and development and industrialization base built by Tuojing Technology (Shanghai) Co., Ltd., covering an area of 39990.2 square meters, with a planned total investment of 930 million yuan and a construction period of two years.
The main buildings include research and development, production and related supporting projects of 90900 square meters. square meters, the project has completed the pile foundation work. After the completion of the project, it will better meet the needs of Lingang customers for product customization, strengthen the formation of the company's products centered on Lingang, and form an industrial form covering Shanghai and surrounding semiconductor customer manufacturers, promote the sustainable development of the company's business, and help Shanghai Lingang Regional semiconductor industry chain construction.

Shanghai Intelligent Manufacturing Base Upgrade and Expansion Project
The total investment of the project is about 1.05 billion yuan, and the total land area is 43231.6 square meters. It will comprehensively build Xinquan auto parts research and development and industrialization base. Xinquan (Shanghai) Auto Parts Co., Ltd. is a wholly-owned subsidiary of Jiangsu Xinquan Auto Trim Co., Ltd. in Lingang New Area. Its main products include instrument panel assembly, overhead filing cabinet assembly, door inner guard assembly Assemblies, bumper assemblies, etc. Currently, we have in-depth cooperation with leading domestic and foreign brands such as Tesla, Audi, Mercedes-Benz, Ideal, Weilai, BYD, SAIC, and GAC New Energy, supplying interior and exterior trim and electronic modular products .

Huaxiang Lingang R&D Center and Automotive Electronics Production Base Project
The project is developed and constructed by Shanghai Huaxiang Hezhen Auto Parts Co., Ltd., with a total investment of 803 million yuan. It will build a 2-story factory building, supporting office rooms, and an underground garage. It will be engaged in the R&D and production of new energy auto parts. The project focuses on three parts: automotive thermoforming lightweight stamping parts, new energy automotive electronics, and new energy automotive trims. The project will reach production capacity in 2027 at the earliest. After the project is completed, the output value will not be less than 1.3 billion yuan per year, and the tax revenue will not be less than 50 million yuan per year.

Qianghua Co., Ltd. integrated circuit core equipment key new material production base project
The total investment of the project is 550 million yuan, and it is planned to start construction in August 2023. It is estimated that the civil construction will be completed in July 2024, and it will be partially put into operation in December 2024. After completion, it will form a production capacity of 500 million yuan for key equipment components for 12-inch high-purity and high-precision integrated circuit chips. The planned construction period of the project is 5 years.

Air Liquide Core Dongfang Bulk Gas Station Project

The first phase of the project has a total investment of about 440 million yuan and covers an area of about 40 acres. It is a supporting project for the SMIC Oriental Lingang 12-inch wafer foundry production line project, and provides high-purity bulk materials for SMIC’s chip production to participate in its process. Gas supply, the main products are high-purity nitrogen, oxygen, hydrogen, helium, CO2 and compressed air.

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olalavn

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National Key Laboratory of Processor Chips, Institute of Computing Technology, Chinese Academy of Sciences: Cambricon-R is a fully integrated neural scene representation algorithm accelerator architecture. Neural Scene Representation Algorithm is a new type of 3D scene encoding algorithm, which has the advantages of high accuracy and low cost. However, the processing flow of the algorithm is complex and introduces a large number of irregular fine-grained memory accesses. When processing neural scene representation algorithms on existing processors (such as GPU and NPU), due to the lack of dedicated hardware pipelines and serious plate conflicts in on-chip memory access, the hardware utilization is extremely low and the algorithm performance is poor. This greatly limits the application of neural scene representation algorithms in real-time interactive scenes such as AR/VR.
The Cambricon-R accelerator proposed this time avoids most of the off-chip memory accesses and solves the board conflict problem of on-chip memory accesses by designing a ray-by-ray hardware pipeline and a dedicated on-chip memory access system, which greatly improves the performance of the computing unit. utilization rate. Compared with Nvidia's A100 GPU, Cambricon-R has achieved performance and energy efficiency improvements of at least two orders of magnitude on 12 typical 3D scene datasets, making the calculation of neural scene representation algorithms meet the performance requirements of interactive applications

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tphuang

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I thought GaAs would be replaced by GaN,seems like that's not the case now
In certain applications like HBT and pHEMT, GaA is preferred. I guess costs are lowered and you don't need GaN. GaN seems better suited for high power RF like 5G base station, satellite communication & military radar. And of course, a lot of power applications

anyway, I took a look at this page, really great info here
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Aside from skyworks, Qorvo, Broadcom mostly fabbing their own RF devices, it looks like the dominant GaA foundries are all Taiwanese.

We have 稳懋 (winfoundry) which fabs for almost everyone including many mainland fabless (25k wpm of HBT capacity)
宏捷科 (AWSC), who fabs for 唯捷创芯 (vanchip), 飞骧(Lansus), 锐石(Radrock tech), 康希 (kxComtech), 立积(Richwave) - all except Richwave are mainland fabless
联颖 (Wavetek), who is owned by UMC and fabs Lansus, 昂瑞微(OnMicro), 卓胜微(Maxcend)

The remaining ones are on mainland
Sanan is the major one
followed by Lion and Unicompound Semi (the last 2) only fabs 3 fabless

If you look at that page, domestic need for GaA HBT is 25k wpm and its 15k wpm for outside China. And this covers are the RF needs (it looks like)

It will be interesting to see what they do here since Taiwanese GaA foundries do a lot of fabbing for mainland RF suppliers. Even if you block Freiberger from selling to skyworks, qorvo and broadcom IDMs, they can still get fabbed by winfoundry, which seems like a the dominant supplier here It seems to me they need to work with winfoundry and AWSC to not fab for American/Japanese RF companies. Or just stop that and get everyone to work with Sanan. Sanan will have to really ramp up production to at least 20k wpm and that requires some time.

But either way, it's not impossible for them to force all the phone companies to get their RF gears from mainland companies (whether fabbed by Taiwanese or mainland foundries)
 

interestedseal

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EUV mask model based on modified Born series​

State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
2Guangdong HUST Industrial Technology Research Institute, Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization, Dongguan, Guangdong 523003, China


Abstract​

Mask model is a critical part of computational lithography (CL). Owing to the significant 3D mask effects, it is challenging to accurately and efficiently calculate the near field of extreme ultraviolet (EUV) masks with complex patterns. Therefore, a method based on the modified Born series (MBS) was introduced for EUV mask modeling. With comparable accuracy, the MBS method was two orders of magnitude faster than the finite-difference time-domain method for the investigated examples. Furthermore, the time required for MBS was further reduced when the mask pattern was slightly changed. The proposed method shows great potential for constructing an accurate 3D mask model in EUV CL with high efficiency.

View attachment 117065

Fig. 1. (a) Schematic diagram of structure of EUV masks. (b) Computation process of the proposed model. The input of MBS consists of the incident field, pattern information and initial condition. The output of MBS is the diffraction field. It takes three steps to calculate the near fields of mask. MBS is used to calculate the downward diffraction. Then the reflection of multilayer is simulated by TMM. Finally, the near fields are obtained from the result of the upward diffraction.

4. Conclusion
In summary, we proposed a fast and accurate mask model for EUV CL. The model employs the SDM, in which the MBS is used to calculate the diffraction of the absorber, and the TMM is used to simulate the reflection of the multilayer. The results of MBS and FDTD are compared on logic, square array, line/space, and complex curvilinear patterns, which prove that MBS is a suitable alternative to FDTD in the application of the EUV absorber. For the investigated examples, a speed improvement of MBS versus FDTD by two orders of magnitude was observed and further speed advantage can be achieved on a GPU. In addition, the iterations of the MBS can be reduced by the initial condition from the field of the mask with a similar pattern. Considerable efficiency improvement of the MBS by the initial condition is demonstrated in three typical OPC situations, including hammerhead, mousebit, and SRAF, with various degrees of change in pattern, which is advantageous to OPC.

Compared with other mask models, the proposed model can simulate EUV masks with complex curvilinear patterns, and exhibits a good balance between speed and accuracy. The proposed mask model makes wide application of CL in EUVL closer. Although the results suggest several advantages, it is crucial to address some potential limitations. For example, MBS based on Fourier transform is difficult to implement parallelly for large-scale simulations. Besides, the discretization is too coarse to accurately represent the thickness. Further research is needed to overcome these limitations.

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According to this article, Tsinghua’s EUV maglev wager stage passed acceptance test in 2021
 
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