Hantiancheng Electronic Technology (Xiamen) Co., Ltd. announced that the R&D team has completed the technical development of the 8-inch silicon carbide epitaxy process with independent intellectual property rights. Hantiancheng
Recently, Hantiancheng Electronic Technology (Xiamen) Co., Ltd. announced that the R&D team has completed the technical development of the 8-inch silicon carbide epitaxial process with independent intellectual property rights, and Hantiancheng has officially possessed the mass production capacity of domestic 8-inch silicon carbide epitaxial wafers .
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It is reported that Hantiancheng completed the signing of a number of long-term contracts (LTAs) last week, including an 8-inch contract worth more than 192 million US dollars. The quality of the 8-inch silicon carbide epitaxial wafers produced by the company has reached the international advanced level, that is, the thickness non-uniformity is less than 3%, the concentration non-uniformity is less than 6%, and the yield rate of 2mm*2mm die reaches more than 98%.
This technological breakthrough marks that my country has mastered the commercialized 8-inch silicon carbide epitaxy growth technology, further promoted the localization process of silicon carbide epitaxy materials, and greatly enhanced my country's international status in the field of silicon carbide epitaxy.
According to Dr. Zhao Jianhui, chairman of Hantiancheng Company, in the semiconductor field, increasing the chip size is the best way to improve the competitiveness of semiconductor products. Taking a die with a size of 2mm*2mm as an example, through the exact same process, the chip (device) output of an 8-inch silicon carbide epitaxial wafer is 1.8 times that of a 6-inch wafer, which is 4-inch wafer output. 4.3 times. It can be seen that the introduction of 8-inch silicon carbide epitaxial wafer products will effectively reduce the cost of device production, which has far-reaching significance for promoting the development of the silicon carbide semiconductor industry.
Hantiancheng is currently the world's largest manufacturer of silicon carbide semiconductor pure epitaxial wafers, and it is a national-level specialized special new key "little giant" enterprise (the first batch in the first year). The company was established in Xiamen Torch High-tech Zone in March 2011. In March 2012, Hantiancheng became the first company in China to provide commercial 3-inch and 4-inch silicon carbide semiconductor epitaxial wafers. The products have reached the international advanced level and filled the gap in China. In April 2014, Hantiancheng completed the first commercial 6-inch silicon carbide epitaxial wafer order, becoming the first domestic and the fourth global manufacturer to provide commercial 6-inch silicon carbide epitaxial wafers. At present, Hantiancheng has reached the world's leading level in all product technical indicators. Based on the newly developed technology, Hantiancheng's high-uniformity product indicators can provide absolute competitive advantages for companies that produce automotive-grade main drive MOSFETs. This competitive advantage makes the 2023 annual order signed by Hantiancheng more than three times the annual production capacity of the original global leading company.
Hantiancheng's orders in hand (350,000 pieces) in 2023 will account for as high as 43.7% and 32.7% of the world. It is understood that most of Hantiancheng's Diamond Class epitaxial production capacity in 2024 has been locked by the LTA long-term contract. Hantiancheng serves the vast majority of silicon carbide semiconductor device companies in the Greater China region, and is the only epitaxial wafer manufacturer in the Greater China region that has entered the supply chain of international giants in large quantities. It also serves Infineon, STMicroelectronics, ON Semiconductor and Wolfspeed is the three international giants among the four global silicon carbide Top 4. The rapid development of Hantiancheng has also greatly promoted and improved the competitiveness of domestic silicon carbide semiconductor substrates in the international market.
