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Patent name: A laser plasma type extreme ultraviolet (LPP-EUV) lithography machine light source system
Application date 2022 .06 .23 Applicant Aerospace Information Innovation Institute, Chinese Academy of Sciences
The disclosure provides a laser plasma type extreme ultraviolet lithography machine light source system, the light source system is relatively miniaturized so that the EUV lithography machine has the advantages of compactness and small size, which is suitable for mass production and supply to the market, and further replacement of gadolinium targets occurs Detectors or other targets can generate EUV light with a wavelength of 6.7nm or shorter.
ASML's existing EUV lithography machine is a very large device. Also due to factors such as its bulky size, complex devices, high cost, and poor flexibility, its application has been limited, and it has become a "stuck neck" problem in my country's high-end chip industry. In addition, it is difficult for the ASML scheme to further increase the laser pulse power and pulse energy, which makes it difficult to develop LPP‑EUV for other more promising elements, such as gadolinium plasma at a radiation wavelength of 6.7nm.
专利名：一种激光等离子体型极紫外(LPP-EUV)光刻机光源系统
申请日 2022 .06 .23 申请人 中国科学院空天信息创新研究院
本公开提供的一种激光等离子体型极紫外光刻机光源系统，该光源系统相对小型化使得EUV光刻机具有紧凑、小型的优点，适于大批量生产供应市场，进一步换用钆靶材发生器或其他靶材可产生波长为6.7nm或更短波长的EUV光。
ASML公司现有的EUV光刻机是一种超大型装置。同样由于其体积庞大、装置复杂、造价成本昂贵、灵活性差等因素限制了它的应用，目前已成为我国高端芯片产业一个“卡脖子”问题。此外，ASML方案想要进一步提高激光脉冲功率和脉冲能量很困难，这使得研发其他更有前途的元素的LPP‑EUV存在困难，如钆等离子体在6 .7nm的辐射波长。
一种高重复频率的极紫外辐射光源及EUV光刻机光源
中国科学技术大学 申请日 2022 .06 .30
本发明提供了一种高重复频率的极紫外辐射光源及EUV光刻机光源
一种高功率EUV光刻光源的双脉冲驱动光源
中国科学院上海光学精密机械研究所 申请日 2022 .11 .16
本发明提供一种高功率EUV光刻光源的双脉冲驱动光源，旨在利用掺Tm全固态激
光器的波长在EUV激发效率上与CO2激光器相当，并且Tm离子上能级寿命长等特性，实现高
平均功率、高插墙效率的驱动光源，获得相比目前CO2驱动光源更经济且更高功率的解决方
案，获得高功率EUV辐射输出，解决EUV光刻机芯片产量提升的问题
