The first in China! Xiamen University achieves 8-inch silicon carbide epitaxial growth
News on March 19, according to the official news from the Department of Physics of Xiamen University, recently, Xiamen University successfully realized the homoepitaxial growth of 8 inches (200 mm) silicon carbide (SiC), becoming the first institution in China to own and realize this technology .
According to reports, as one of the main representatives of the third-generation semiconductors, compared with silicon, silicon carbide has a wider band gap, a higher breakdown electric field, and a higher thermal conductivity. Excellent performance in the frequency domain. Silicon carbide-based power electronic devices have been widely used in aerospace, new energy vehicles, rail transit, photovoltaic power generation, smart grid and other fields.
The current mainstream silicon carbide single crystal and epitaxial growth are still in the 6-inch stage, and expanding the size has become the main path to reduce costs and increase efficiency in the industry chain. However, there are still many technical difficulties in the process of moving towards 8 inches.
The person in charge of the scientific research team of Xiamen University said that by overcoming the problems of greater stress on the 8-inch substrate, easier cracking, and more difficult control of the thickness uniformity of the epitaxial layer, the homoepitaxial growth of silicon carbide based on domestic substrates was successfully realized. The thickness of the epitaxial layer is 12 um, the thickness non-uniformity is 2.3%; the doping concentration is 8.4×10¹⁵ cmˉ³, the doping concentration non-uniformity is <7.5%; the surface defect (Carrot, Triangle, Downfall, Scratch) density is <0.5 cmˉ².
The person in charge of the above-mentioned scientific research team said that this breakthrough marks that my country has mastered the related technology of 8-inch silicon carbide epitaxial growth. The realization of this technology is the result of the industry-university-research cooperation between Xiamen University and Hantiancheng Electronic Technology (Xiamen) Co., Ltd., which will inject new impetus into the development of my country's silicon carbide industry and promote the development of new energy and other related fields.
It is understood that the physics department of Xiamen University was founded in 1923. It is one of the earliest physics courses established in Chinese universities and has played an important role in the history of Chinese physics development. Xiamen University Physics participated in China's first five-university joint semiconductor specialization; developed China's first conductive glass, the first transistor radio, and the first gallium phosphide planar light-emitting diode.