Everything about Extreme Ultraviolet lithography is Extreme. Errors are measured in picometers rather than nanometers. Meter diameter intercalated multilayer mirrors flat down to the dozen of picometers, light wavelength aberration down to the dozen of picometers, also the wafer stage has to be more precise to take advantage of shorter wavelength and also has to be maglev. You have to hit a molten drop of tin dozen thousands of times per second with a laser, extreme vacuum requirements, extreme anti-vibration requirements, really complex hydrogen tooling to clean the mirrors, the energy waste is huge like a megawatt to produce a few hundred of watts of EUV light, very accurate EUV sensors and so on.
LPP require complex MOPA lasers, DPP requires complex electric tooling and cleaning, SSMB and Synchrotron is basically a particle accelerator.
Photos of the machine itself looks complex due the huge quantity of cabling used to connect sensors, power units and others.
But is also is a Extreme mistake to think that given enough extreme pressure and extreme market forces, companies supported by an entire country with big resources cannot develop and commercialize EUVL technologies their own. And more if such country ALREADY have develop over the past years relevant EUV technologies on its own.
LPP require complex MOPA lasers, DPP requires complex electric tooling and cleaning, SSMB and Synchrotron is basically a particle accelerator.
Photos of the machine itself looks complex due the huge quantity of cabling used to connect sensors, power units and others.
But is also is a Extreme mistake to think that given enough extreme pressure and extreme market forces, companies supported by an entire country with big resources cannot develop and commercialize EUVL technologies their own. And more if such country ALREADY have develop over the past years relevant EUV technologies on its own.