The Institute of Chemistry and others develop a new strategy for direct-writing high-performance atomically thick two-dimensional semiconductor thin films
Two-dimensional ( 2D ) semiconductor materials offer an opportunity to extend Moore's Law to the atomic scale. Compared with traditional processing techniques based on evaporation and lithography, printed electronics has received attention due to its cost-effectiveness, flexibility, and compatibility with different substrates. Currently, printed 2D transistors are constrained by suboptimal performance, thicker semiconductor layers, and low device density. At the same time, most two-dimensional material inks usually use high-boiling solvents, and the accompanying problems include device performance degradation, high material cost and toxicity, etc., which are difficult to apply on a large scale. Therefore, the development of simple and environmentally friendly strategies is of great significance for fabricating low-cost, large-scale functional devices with printed 2D materials.
Song Yanlin's group at the Key Laboratory of Green Printing Institute, Institute of Chemistry, Chinese Academy of Sciences has made a series of progress in the synthesis of 2D atomically thick materials and patterned devices , for example, the research on 2D MXene and nanocrystalline composites (
J. Mater. Chem. 2022,
10 , 14674-14691;
Nano Res. 2022, DOI: 10.1007/s12274-022-4667-x ), Humidity Sensing Micro-Supercapacitors Based on Alternately Stacked Microelectrodes (
Energy Environ. Mater. 2022, DOI: 10.1002/ eem2.12546 ).
Recently, the Institute of Chemistry, in cooperation with Tsinghua University and the University of California, proposed an interface trapping effect printing strategy. This strategy uses a low-boiling aqueous hyperdispersed 2D material ink to directly write 2D semiconductor thin film arrays without adding additional surfactants. Specifically, this strategy obtained narrowly distributed nanosheets with predominantly bilayer thickness by fractional centrifugation of exfoliated semiconducting 2H - MoS nanosheets; suitable ink solvent. The printed ultrathin patterns (about 3 nm thickness) are mainly continuous and uniformly arranged with single or two-layer MoS2 nanosheets , and suppress the coffee ring with a low porosity (about 4.9% ). Using commercial graphene as electrodes, the fabricated transistors exhibited a mobility of 6.7 cm 2 ·V - 1 ·s - 1 and an on-off ratio of 2 × 10 6 at room temperature , exceeding the performance of previously printed MoS 2 thin-film transistors . Based on this, the researchers prepared high-density (about 47,000 /cm 2 ) printed transistor arrays. This interface trapping effect printing strategy can be applied to other 2D materials, including NbSe 2 ,Bi 2 Se 3 and black phosphorus provide new methods and new ideas for printing two-dimensional materials for electronic devices.
The related research results were published in
Advanced Materials ( DOI: 10.1002/adma.202207392 ). The research work was supported by the National Natural Science Foundation of China, the Ministry of Science and Technology, the Chinese Academy of Sciences, the Beijing Association for Science and Technology, and the Beijing Natural Science Foundation.