Chinese semiconductor industry

PopularScience said:

New breakthroughs have been made in the industrialization of key subsystems of domestic immersion lithography machines

Zhejiang Qier Electromechanical Technology Co., Ltd. has good news recently. The high-end integrated circuit equipment has been iterated to the 8th generation. The high-precision liquid temperature control error does not exceed plus or minus 0.001 degrees.

According to the report, Qier Electromechanical undertakes the important task of localizing the immersion liquid control system of the immersion lithography machine, and the immersion liquid system is one of the four core components of the immersion lithography machine. Previously, the related technology has been controlled by a few international giants for a long time.

Since 2004, through the continuous support of the 863 plan, major special projects and the SMEE, the R&D team of Qier Electromechanical has carried out basic research and technical research on the lithography machine immersion system for more than ten years, and undertaken related research projects. More than 10 items, more than 100 authorized invention patents, including 56 invention patents directly related to the lithography machine immersion system.

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ansy1968 said:

@tokenanalyst bro a follow on question, IF SSRF is being used as research tool for Optics/Lens and materials, then maybe CAS and other corporate tech entity is waiting for IHEPS project to finish and produce chip immediately? I mean can SSRF produce the same performance result like that of IHEPS?

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tokenanalyst said:

I have a feeling that SMEE could not be the ones integrating EUVL in China. If Tsinghua is successful in their SSMB project they will be ones who will want to capitalize it by creating their own shell companies. If the CAS LPP project is successful is possible they also create their own shell companies to capitalize it.
I don't know, maybe SMEE could still be the to go integrator, but for a company of the size of SMEE it looks like they have their hands full with what they have right now with the immersion lithography project, the advanced 2.5D/3D packaging project and other advance tools that they are developing.
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ansy1968 said:

@dengyeye Thanks bro, so we can equates that packaging is more important than front end Litho?

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european_guy said:

Yes, I agree.

Definitely you need not only national support, but also the right "size". SMEE does not seem so big (it would be interesting to know how many R&D people work there), but considering their ambitious targets in advanced packaging and at the same time in DUV lithography, maybe adding also EUV is simply too much for them. Just for the size of their R&D department.

To me, SMEE would really need the engineering support of some industry powerhouse to succeed and succeed timely (that is even more difficult).

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In order to improve the ability to independently develop high-performance chips, my country has started EUVL research. The project "7000 W axial fast flow CO 2 laser" jointly undertaken by Wuhan Optics Valley Keweijing and Huake has successfully passed the acceptance and reached the international advanced level, forming a series of 1 kW–10 kW fast axial flow CO 2 laser products. It will be developed in the direction of high-power and high-purity radially polarized fast axial-flow CO 2 lasers [

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] . Huazhong University of Science and Technology has successfully developed a series of cross-flow CO 2 lasers with powers of 2 kW, 5 kW and 10 kW, and successfully commercialized more than 100 sets of high-power cross-flow CO 2 laser processing systems [

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] . Pan Qikun et al. [

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] proposed a laser power stabilization method and laser power amplification system, which effectively improved the stability of the output narrow pulse width laser power and pulse energy after CO 2 laser amplification. After that, the team proposed a dual-wavelength laser coaxial output system, which solved the problem that tunable CO 2 lasers could not output dual wavelengths at the same time, and improved the use of dual-wavelength CO 2 lasers in EUV lithography light sources in the MOPA system . power extraction efficiency and consistency of dual-wavelength CO laser beam quality, polarization degree, and transmission direction in [

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] . Shanghai Institute of Optics and Mechanics proposed a molten droplet generation device for EUV light sources, and then proposed an integrated tin raw material canning system for droplet targets in EUV light sources, which can obtain more uniform melting tin, and its high degree of integration, safe and convenient operation, suitable for the canning of EUV light source tin raw

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[

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] . Yin Peiqi et al. [

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] conducted extensive research on the characteristics of plasma generated by laser pulse irradiation of droplets, and carried out experimental research on Nd:YAG laser-induced droplet plasma by using direct imaging method and shadow method, and analyzed the droplet plasma. The expansion characteristics of the body plume and the movement of the droplets under the laser action. Sun Qin et al. [

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] carried out research on the diagnosis method of tin plasma characteristics irradiated by pulsed laser, and used Langmuir probe to obtain the time evolution of electron temperature and electron density of tin plasma generated by irradiation with different laser energies. Qi Lehua et al. [

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] conducted research on the uniform generation and shape change of droplets. Through numerical simulation and experimental research on the uniform droplet spraying process, it was found that the droplet jet velocity mainly depends on the spray pressure, and the droplet flow uniformity mainly depends on the spray pressure. Depending on the disturbance frequency and disturbance amplitude, the pressure field of the jet changes periodically. Xiao Yuan et al. [

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] used a self-developed metal droplet generation system to analyze the influence of impurities attached to the nozzle wall of the droplet generator on the ejection stability and the effect of process parameters on the uniformity of the droplet. The development has certain reference value. Wang Zhanshan et al [

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]A Mo/Si multilayer spherical mirror suitable for 13.5 nm extreme ultraviolet light was developed. The diameter of the spherical mirror is 125 mm and the radius of the curved surface is 143 mm. The uniformity of the multilayer film thickness of the spherical mirror is below 0.8%. The diameter of the circular mirror is 300 mm. The Shanghai Institute of Optics and Mechanics successfully produced a 13.5 nm EUV mirror in 2011, with a test reflectivity of 67.8%, close to the theoretical maximum value of 73.7% [

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] . Wang Xun et al. [

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] used the reactive magnetron sputtering process, combined with the "hysteresis loop" relationship composed of sputtering voltage and oxygen flow rate, to prepare a metal oxide protective layer with excellent purity, roughness, density and uniformity. . Sun Shizhuang et al. [

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] used molecular dynamics model to simulate the probability of reflection and re-sputtering during the deposition of Mo/Si atoms, and prepared multilayer film samples on substrates with different tilt angles through magnetron sputtering experiments to verify the simulation. Simulation results of the model. Sun Shizhuang et al. [

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] obtained the relationship between air pressure and target-substrate distance and film surface roughness. Today, we are in the process of upgrading and transforming DUV to EUV lithography. Through the continuous efforts of domestic researchers, active learning and reference of foreign advanced technologies, coupled with the support of strong comprehensive national strength, my country's lithography technology and semiconductor industry will definitely enter the fast lane of development. And gradually shorten the gap with the international advanced level.​

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tokenanalyst said:

According to this paper:

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This company is developing CO2 lasers that could be used in Laser Produced Plasma application for EUVL, basically making it the second commercial company in China involved in the EUVL project. Also there are a lot of other achievements in this paper.

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