Those are the expected results from a size perspective.
LW is the line width, which is in the tens of nm (22-68 nm)
LER is line error roughness. that's the deviation from straightness of a feature, not the feature size itself, and note how they're limited at around 2-3 nm. So errors get bigger relative to feature size as you move down in process.
What they're doing in that paper is developing an EUV photoresist with high resolution and testing a measurement platform. many photoresists in use now for ArF processes are polymeric resists which are easy to coat (spin coating the polymer solution) but have a resolution problem.
Let's take a positive photoresist - where exposed, it becomes more soluble. These contain a photoacid generator (PAG) which is an organic molecule that turns into a water soluble acid when exposed to UV light. This acid either directly dissolves away as part of the photoresist, or reacts with the photoresist.
Here's the problem - many organic molecules are soluble in polymers due to their loose pack molecular structure and similar chemical properties. So they'll move over time. Even motion of a few nm means that the edge of the exposed feature is no longer sharp. So for EUV, they need to develop a photoresist specifically for high resolution EUV processes.
Excellent analysis, there are some good news from this.
1- Is that they don't have to wait to ASML be allowed to export a EUV machine to research and develop, masks, multilayered mirrors and photoresists.
2- Its allow them to research the possibility of using EUV SSMB as a potential EUV light source alternative, we know that necessity is the mother of invention.
Another thing, this is an study i posted earlier but in this case is made by Tsinghua and in the other study is made by Fudan university and looks like Fudan is using larger doses of EUV radiation like almost 300 mj/cm2 while Tsinghua is using 10-15 mj/cm2.
ASML scanners deliver 20mj/cm2 and that give a throughput of 80 WPH, taking into account optics and other enhancements.
If a SSMB EUV Light Source can deliver a powerful dosage of EUV radiation, that could mean that they may won't need to put as much of an effort in developing the reflective optics, even considering the losses still could deliver enough dosage. Is that a correct assessment or i am missing something?