China accelerates development of SiC MOSFET for power semiconductors
China-based companies such as China Resources Microelectronics (CR Micro), Silian Microelectronics and NCE Power are actively developing high-end power semiconductor product lines.
CR Micro recently launched self-developed 1200V silicon carbide (SiC) MOSFET products for onboard battery chargers in new energy vehicles, charging stations, industrial power supply, solar power photoelectric inverters and wind power generation applications.
Ever since Tesla started equipping its Model 3 with inverters using full SiC MOSFET modules in 2016, global automakers have been accelerating the application of SiC MOSFET.
In 2020, BYD began using SiC power modules in its high-end Han car model. BYD expects to replace all the silicon-based (Si-based) IGBT components in its EVs with SiC components by 2023.
Wolfspeed, Infineon Technologies, Rohm Semiconductor and STMicroelectronics (STM) currently hold 90% of the global SiC market share. Although many China-based manufacturers have launched SiC products, few have the R&D and mass production capabilities for SiC MOSFET. CR Micro's launching of SiC MOSFET indicates China is one step closer to catching up with top international power semiconductor manufacturers.
CR Micro officially launched its first-generation 1200V and 650V industrial-grade SiC Schottky diode power component series of products in 2020. In the same year, it began mass production of its 6-inch enterprise SiC wafer product line, becoming the first in China to do so. In November 2021, CR Micro revealed through an investment platform that it is already mass producing and bringing in revenue from SiC diode products. The company's 6-inch SiC wafer product line is mainly for self-use with a monthly production of 1,000 pieces.
In reality, it is not just power semiconductors that are accelerating in China but the SiC supply chain as well. For example, JSG is planning a CNY5.7 billion private placement, which will primarily be invested in the construction of a SiC substrate chip production base. The base is expected to have an annual production of 400,000 6-inch and larger conductive and semi-insulated SiC substrate chips. Additionally, JSG's SiC epitaxy equipment has already passed customer verification. At the same time, JSG also has plans to set up a testing production line for the growth, cutting and polishing of 6-inch SiC crystals.