Siliconware Precision (Wuhan) Co., Ltd. announced that its third batch of laser lift-off mass production equipment compatible with 12-inch silicon carbide substrates has been successfully delivered to customers. This progress means that the company's laser lift-off technology in the field of ultra-large silicon carbide substrate processing has passed industrialization verification and is expected to bring new development momentum to the silicon carbide industry chain.
In terms of key processes, SiliconLink, relying on its core R&D team from the laser discipline at Huazhong University of Science and Technology, has independently developed laser lift-off technology for silicon carbide single crystals. For silicon carbide, a material with a Mohs hardness approaching that of diamond, this technology overcomes the efficiency and wear bottlenecks of traditional wire cutting in large-size processing. Taking an 8-inch wafer as an example, the processing time per wafer can be controlled within 15 minutes, with efficiency improved by 20–30 times compared to traditional processes; material loss is reduced by approximately 60%, and no consumables or chemical reagents are required; wafer yield is increased by approximately 30%, and the cost per wafer is reduced by approximately 50%.
In less than six months, the company has shipped dozens of equipment sets, covering several leading domestic silicon carbide enterprises. Leveraging modular design and supply chain collaboration, its equipment has achieved mass production, with a current delivery cycle of approximately 28 days, which is expected to be shortened to 14 days in the future. Simultaneously, the company is expanding into the silicon photonics chip equipment field; its independently developed laser slicing equipment has already been exported, possessing high precision and cost-effectiveness, and is expected to become a new business growth driver.