IIRC that guy writes his posts in Chinese and then uses AI translations into English.
Chinese semiconductor thread II
- Thread starter vincent
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IIRC that guy writes his posts in Chinese and then uses AI translations into English.
What you are saying is true only if EUV could be used with single patterning but because of multiple issues, tsmc is already on EUV double patterning. 2150i should be able to do 4 nm process.
Great, someone we've never seen before showed up in our post and went on and on about how China's EUV lithography machines have made a breakthrough and will be ready for mass production in two to three years, citing a bunch of mysterious information with no sources. It sounds like, “Trust me, bro.”
this shouldn't be a surprise for anyone, who regularly follow this thread.. the amount of research papers , Patents , components breakthrough, Photoresists , EUV masks, etc. post here is incredible.
so even he don't post a source. still this is a credible information.
I dont think you have been following this thread. One the reason I said from a couple years that China has already has EUV machines is because all the ecosystem that has been develop around it. From EUV mask inspection tools, EUV metrology tools, to EUV photoresists, pellicle development and so on. None of that can happen in vacuum (no pun intended), my guess is that the EUV tooling and anchilliary ecosystem in China have is as advanced as whatever EUV lithography machine they have. The ecosystem is going neck to neck with the main tool.
The first 8.6th generation AMOLED production line equipped with FMM-free technology was topped out ahead of schedule
The world's first Gen 8.6 AMOLED production line, utilizing FMM-free technology, is located in Hefei's Xinzhan High-tech Zone. The line is being built and operated by Hefei Guoxian, funded by Visionox and the Hefei Municipal Investment Platform. Visionox and Hefei Guoxian will collaborate closely on technology transfer. The production line, with a total investment of 55 billion yuan, has a designed monthly production capacity of 32,000 glass substrates (2290mm x 2620mm). Since construction began in February 2025, through scientific scheduling, resource optimization, and technical breakthroughs, the project has overcome numerous challenges in constructing a high-generation production line, achieving the topping-out of the main plant in just 168 days.
The production line adopts ViP technology independently developed by Visionox . This technology realizes AMOLED pixel preparation through semiconductor photolithography process, completely breaking away from the limitations of traditional FMM process. It has core advantages such as independent pixels, high precision, and high yield. It can greatly improve the cutting efficiency and economy of AMOLED panels, and provide better solutions for the medium and large-sized high-end display market such as tablets, laptops, and automotive.
BIWIN Storage invests in Beijing Xingyun Integrated Circuit
BIWIN Storage announced that its wholly-owned subsidiary, Hainan Nanbaisuan Technology Co., Ltd. (hereinafter referred to as Hainan Nanbaisuan), plans to jointly invest with Xu Linxian and Director and General Manager He Han in Beijing Xingyun Integrated Circuit Co., Ltd. (hereinafter referred to as Xingyun Integration). Hainan Nanbaisuan, Xu Linxian, and He Han will respectively invest RMB 10 million, RMB 2 million, and RMB 4.7 million in Xingyun Integration, bringing the total registered capital to RMB 744,720, RMB 148,940, and RMB 350,020. Following this capital increase, Hainan Nanbaisuan, Xu Linxian, and He Han will hold 1.0600%, 0.2120%, and 0.4982% of Xingyun Integration's equity, respectively.
Public information shows that Beijing Xingyun Integrated Circuit Co., Ltd. was established in 2023. It is a company focusing on GPU chip research and development, and is committed to providing high-performance chips and related solutions for large model scenarios.
BIWIN Storage is a company specializing in semiconductor memory and advanced packaging and testing manufacturing. Its products and services cover embedded storage, industrial control storage, consumer storage and advanced packaging and testing services, and are widely used in mobile smart terminals, PCs, industrial terminals, data centers, smart cars, mobile storage and other information technology fields.
Public information shows that Beijing Xingyun Integrated Circuit Co., Ltd. was established in 2023. It is a company focusing on GPU chip research and development, and is committed to providing high-performance chips and related solutions for large model scenarios.
BIWIN Storage is a company specializing in semiconductor memory and advanced packaging and testing manufacturing. Its products and services cover embedded storage, industrial control storage, consumer storage and advanced packaging and testing services, and are widely used in mobile smart terminals, PCs, industrial terminals, data centers, smart cars, mobile storage and other information technology fields.
Sounds kind of like an export tariff. You know the ones Argentina has on food exports and the US complains about all the time.
I guess we know where the US economy is going. You only need things like export tariffs if your tax service cannot collect corporate taxes properly.
It is a clear sign the country is a banana republic. Companies evade tax collection and hide money in offshores or tax havens.
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6.X nm High-Reflectivity La/B 4 C Multilayer Film for Next-Generation Beyond-EUV Lithography
Objective
Currently, the selection of a working around 6.X nm is considered a leading candidate for optical lithography of the next generation, known as the beyond extreme ultraviolet (BEUV) lithography . 75% reflectivity at normal incidence, comparable to the performance of conventional Mo/Si optics at 13.5 nm. Second, experimental studies have demonstrated that the reflectivity of La/B 4 C multilayer mirrors is more than 40%, hinting towards their potential in practical applications. The periodic thickness of La/B 4 C multilayers for the BEUV band is about 3.4 nm, which is around half that of the Mo/Si multilayers. The number of periods required in La/B 4 C multilayers are about 300, about five times greater than that of Mo/Si multilayers. These differences render the La/B 4 C multilayers much more challenging in terms of deposition processes and interface optimization techniques. Consequently, more researchers have been carrying out interface studies of La/B 4 C multilayers. Previous studies have indicated that the interface width of B 4 C-on-La is more than twice that of La-on-B 4 C. It is suggested that reducing the interface width of B 4 C-on-La is the key factor in enhancing reflectivity. The interface width of B 4 C-on-La is reduced from 1.5 nm to 1.2 nm by using LaN instead of La with nitrogen reactive sputtering. The LaN/B 4 C multilayers achieve a reflectivity of 58.1% at a central wavelength of 6.65 nm, which is 7% higher than that of La/B 4 C multilayers, a step forward for the BEUV multilayers. However, the degradation of the LaN layer in the La/B 4 C-based multilayers remain unsolved currently, hindering its further applications.
In this work, a method of inserting an ultra-thin carbon interfacial barrier layer at the B 4 C-on-La interface is introduced to improve the interface quality of La/B 4 C multilayers and enhance their reflectivity. The optimized La/C/B 4 C multilayers achieve a reflectance of 60% at 6.65 nm under an incident angle of 12.5°. This interface engineering strategy provides significant advances and further guidance for the development of 6.X nm and/or X-ray multilayers, fulfilling the requirements for BEUV multilayers used in the lithography of the next generation at the operating wavelength around 6.X nm.
Methods
The La/B 4 C multilayer samples are deposited on silicon wafer substrates by using pulsed direct current (DC) magnetron sputtering. The substrate roughness is around 0.15 nm, and the periodic thickness of all samples is about 3.42 nm. The interface structures are characterized by using X-ray reflectivity (XRR) and high-resolution transmission electron microscope (HRTEM) images. The EUV reflectance spectra are measured at the National Synchrotron Radiation Laboratory (NSRL). Furthermore, the measured reflectivity of the La/B 4 C and La/C/B 4 C multilayers with 100 periods in the 6.5‒6.7 nm band is compared with the calculated results using the XRR fitting parameters.
Results and Discussions
According to the XRR results shown in Fig. 1 and Fig. 2, the measured periodic thickness of all samples is about 3.42 nm. The results indicate that the La/C/B 4 C interface structure exhibits the best performance, as confirmed by both XRR and HRTEM analyzes (Fig. 2 & Fig. 4). The BEUV reflectivity of the La/C/B 4 C multilayer with 100 periods is about 25%, which is 7% higher than that of the La/B 4 C multilayer. This is attributed to the carbon layer preventing the direct contact of La with B 4 C. The theoretical calculations using the XRR fitting parameters are in good agreement with the measured results of reflectivity curves, as shown in Fig. 3. Therefore, the width of the transition region between the two primary materials in the multilayers should not exceed the thickness of the inserted carbon layer. This reduction in the transition region width substantially compensates for the increased absorption caused by the addition of the (extra) carbon in the La/C/ B 4C multilayers, eventually leading to the overall increase of their BEUV reflectivity.
Conclusions
A high-reflectivity BEUV mirror is successfully prepared by inserting a single interfacial barrier layer of 0.2 nm carbon at the B 4 C-on-La interface. The La/C/B 4 C multilayer mirror (with 250 periods) is measured at the NSRL and achieves a reflectance of 60.0% at 6.65 nm under an incident angle of 12.5° (Fig. 5). This result addresses the gap in the high-reflectivity La/B 4 C multilayers in Chinese research and plays a significant role in advancing the application of BEUV multilayer mirrors for the lithography of the next generation. It substantially expands the potential applications of high-reflectivity mirrors in areas such as BEUV lithography and other X-ray scientific facilities. Next, our research will focus on the reflectivity enhancement, large-diameter mirror preparation techniques, stability evaluations, and validations for further practical applications.