Chinese semiconductor thread II

[tokenanalyst]

Equipment solutions of Shanxi CETC SiC industry chain​

Horizontal SiC Chemical Vapor Deposition Furnace

MTS is used as the precursor raw material, which is brought into the mixing tank by bubbling or evaporation, and Ar and H2 are used as mixed gases to perform CVD coating on the surface of graphite or SiC substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 100±10μm; the purity is ≤1ppm; the silicon-carbon ratio is 1:1, and all the indicators of the coating meet the semiconductor requirements.



Vertical SiC Chemical Vapor Deposition Furnace

MTS is used as the precursor raw material, which is brought into the mixing tank by bubbling or evaporation, and Ar and H2 are used as mixed gases to perform CVD coating on the surface of graphite or SiC substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 100±10μm; the purity is ≤1ppm; the silicon-carbon ratio is 1:1, and all the indicators of the coating meet the semiconductor requirements.


TaC vapor deposition furnace
Using TaCl5 and CH4 mixed gas as precursor raw materials, Ar and H2 as mixed gas, CVD coating is performed on the surface of graphite substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 40±5μm; purity: ≤5ppm; tantalum-carbon ratio: 1:1, and all coating indicators meet the needs of semiconductor, aerospace thermal protection, medical equipment and other industries.



Pyrolytic graphite vapor deposition furnace

Using CH4 as the precursor raw material, Ar and H2 as the mixed gas, CVD coating is performed on the surface of the graphite substrate. A full set of solutions of equipment + process + service can be provided. The thickness of the coated product reaches 60±5μm; purity: ≤1ppm; thermal conductivity: 376W/m·K (a) 2.0W/m·K (c). All indicators of the coating meet the requirements of semiconductors, rocket throat linings, OLED industry evaporation vessels,

Vertical high temperature purification furnace

It is mainly used for the purification and directional element removal of carbon-based materials such as graphite, insulation felt, and graphite powder. It adopts resistive heating, and achieves 2400-degree high-temperature heating through infrared thermometer and temperature control module. It can achieve high-purity treatment of carbon-based materials with purification process. The equipment has good purification effect, high degree of automation, and reliable and stable performance.

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[tokenanalyst]

Kangxinwei completed the B round of financing of tens of millions of yuan​

Recently, Hefei Kangxinwei completed a B round of financing of tens of millions of yuan, and the investor in this round was Junsheng Investment. Kangxinwei completed the A and A+ rounds of financing in 2022-2023, totaling 322 million yuan, and introduced strategic investors such as CITIC New Future, Xicheng Zhiyuan, Science City Venture Capital, Guoyuan, CITIC Construction Investment, Zhuoyuan Asia, and Huaan Jiaye.

According to information, Kangxinwei was established in 2018 and is headquartered in the Economic and Technological Development Zone of Hefei City, Anhui Province. It is a domestic manufacturer of embedded storage master chips and storage modules.
Kangxinwei's business scope covers the research and development, production and sales of storage master control chips and storage modules. Its current main products are eMMC embedded storage master control chips and modules.

Kangxinwei takes storage master control technology as its core and provides one-stop solutions and OEM/ODM solutions. In addition to consumer-grade products, the company's self-developed aftermarket automotive-grade storage and industrial-grade storage are also vigorously expanding customers. The company's self-developed UFS storage will also be gradually launched into the market.

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Enhancing the PMMA Photoresist Film via Ozone Treatment and Vapor Phase Infiltration​

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Abstract​

Achieving photoresists that combine low film thickness and high etch resistance while maintaining high resolution presents a challenging contradiction. Doping a poly(methyl methacrylate) (PMMA) film with metal oxide was demonstrated to provide better etch performance, but the line roughness was significantly scarified. Herein, we report an efficient PMMA surface treatment followed by vapor phase infiltration (VPI) for greatly improved deposition of hafnium oxide (HfOx). By treating PMMA with ozone and infiltrating it with tetrakis(dimethylamino)hafnium (TDMAH), a hybrid photoresist achieving 30 nm half-pitch (HP) resolution under extreme ultraviolet lithography (EUVL) (74 mJ/cm2) with enhanced etch resistance (>120% improvement) and reduced line edge roughness (LER < 10 nm) was realized. This approach provides a viable solution for next-generation lithography by enabling thinner resists without compromising plasma etch resistance, which is critical for advanced semiconductor manufacturing.​

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Changchuan Technology established a joint venture with Changyue Technology to promote the localization of high-end packaging and testing equipment​

Changchuan Technology issued an announcement on May 6, announcing that it will jointly invest with professional investment institutions to establish Hangzhou Changyue Technology Co., Ltd., which is committed to the localization of high-end packaging and testing equipment.

According to the announcement, the registered capital of the joint venture is RMB 100 million, of which Changchuan Technology subscribed RMB 50 million, accounting for 50% of the registered capital. The partners include Shanghai Semiconductor Equipment Materials Phase II Private Equity Investment Fund Partnership (Limited Partnership) and Hangzhou Benjian Xinlian Equity Investment Partnership (Limited Partnership).

Hangzhou Changyue Technology Co., Ltd. will mainly engage in the localization of high-end packaging and testing equipment and related research and development, production, sales and after-sales service. Changchuan Technology said that the investment aims to promote the technological progress and localization of domestic integrated circuit equipment, while enriching the company's equipment product line and improving its overall core competitiveness and profitability.

This move reflects Changchuan Technology's strategic layout of continuing to deepen its presence in the field of integrated circuit equipment. With the growing demand for independent control of the domestic semiconductor industry chain, the localization of high-end packaging and testing equipment has become an important direction for the development of the industry. By cooperating with professional investment institutions, Changchuan Technology is expected to integrate more resources and accelerate the research and development and industrialization of high-end packaging and testing equipment.

Industry analysts believe that semiconductor packaging and testing equipment is a key link in integrated circuit manufacturing, and its localization level directly affects the integrity and security of my country's semiconductor industry chain. The joint venture established by Changchuan Technology will help fill some gaps in the field of high-end packaging and testing equipment in China and promote the extension of the integrated circuit industry chain to high-end links.

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