Breakthrough
Ningbo Institute of Materials has developed a 4-inch ultra-thin, ultra-low warpage diamond self-supporting film!
Diamond has become a key material for solving the heat dissipation problem of high-frequency and high-power chips due to its ultra-high thermal conductivity. Directly bonding chips such as silicon (Si), gallium nitride (GaN), and silicon carbide (SiC) to diamond films can significantly reduce near-junction thermal resistance and chip junction temperature, and is an ideal solution for thermal management of future high-performance chips and 3D chip packaging. Diamond films are usually nucleated and grown on substrates. However, due to the limitations of existing processes, there is a large stress between the film and the substrate and inside the film, resulting in significant warping after the substrate is removed. It is difficult to meet the warping requirements of the bonding process, which has become a core bottleneck restricting its packaging application.
In response to this challenge, the functional carbon material team led by Jiang Nan, a researcher at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, successfully prepared a 4-inch diamond self-supporting film with a thickness of less than 100 μm through innovative technology. The self-supporting film has a warpage of less than 10 μm within a 4-inch range; it forms self-adsorption when attached to a glass substrate, fully demonstrating its ultra-high flatness and low stress characteristics . The successful development of this type of diamond self-supporting film has taken a key step in overcoming the warpage problem that has long restricted the chip bonding process and promoting the development of diamond in the field of thermal management.
In response to this challenge, the functional carbon material team led by Jiang Nan, a researcher at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, successfully prepared a 4-inch diamond self-supporting film with a thickness of less than 100 μm through innovative technology. The self-supporting film has a warpage of less than 10 μm within a 4-inch range; it forms self-adsorption when attached to a glass substrate, fully demonstrating its ultra-high flatness and low stress characteristics . The successful development of this type of diamond self-supporting film has taken a key step in overcoming the warpage problem that has long restricted the chip bonding process and promoting the development of diamond in the field of thermal management.
