Projection exposure lithography light source system for semiconductor manufacturing
Chinese semiconductor thread II
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A method for assembling a photolithography objective lens and a photolithography objective lens
A pipeline vibration reduction method for photolithography machine
A pipeline vibration reduction method for photolithography machine
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Linear rotation device for photolithography equipment and method for controlling rotational motion of mask plate moving stage using the same
Limiting structure, pre-alignment module and method for lithography equipment
Limiting structure, pre-alignment module and method for lithography equipment
A solid-gas hybrid deep ultraviolet laser and imaging method
Not really. Intel has fabs in Ireland and Israel，Micron has fabs in Taiwan，they can ship chips to China from non-US fabs
China most likely will take action on taiwan now China and US broke up.
still thinking doing business at this time seems bit odd.
HGTECH will achieve revenue of 11.709 billion yuan in 2024, a year-on-year increase of 13.57%
On April 11, HGTECH released its 2024 performance report. In that year, the company achieved operating income of 11.709 billion yuan, a year-on-year increase of 13.57%, and net profit attributable to the parent company of 1.221 billion yuan, a year-on-year increase of 21.17%.
Among them, the operating income of the intelligent manufacturing business was 3.492 billion yuan, a year-on-year increase of 9.45%. In terms of industry focus, orders from five major industries such as new energy vehicles and ships accounted for 87%, among which orders from the new energy vehicle industry increased by 33% year-on-year. The shipbuilding industry has achieved batch application in leading shipbuilding companies with innovative products such as the world's first intelligent equipment for inkjet marking and ultra-large-format laser composite milling and welding production lines, and orders increased by 134% year-on-year.
International business continued to make breakthroughs. The fully automatic aluminum alloy battery tray production lines were exported to the EU in batches. High-end products such as three-dimensional five-axis laser equipment, multi-head laser blanking automated production lines, and tire mold laser cleaning intelligent equipment achieved significant growth in overseas markets, driving the total export volume to increase by 34% year-on-year.
During the reporting period, the company's connection business revenue was 3.975 billion yuan, a year-on-year increase of 23.75%. The revenue growth was mainly in the AIGC application field. The company seized the opportunity of market demand and delivered 400G and 800G optical modules on a large scale, further expanding the customer map and delivery share; delivered 400G silicon photonic modules as the first echelon in the world; successfully launched 800G OSFP 2*FR4 TRO, 800G LPO silicon photonics, 800G AEC active cables, 1.6T-200G/λ silicon photonics and many other cutting-edge products in the industry. In the 5G-A business field, the industry took the lead in releasing 50G SFP56 series gray light and color light modules and achieved batch delivery, and the optical modules for 4G/5G base station applications continued to maintain the industry's leading share; the customer-side 10G/100G/400G/800G transmission optical modules were fully covered, and the 800G ZR/ZR+Pro coherent optical modules were mass-produced, and samples were sent to key customer groups. In the F5G-A business field, 25G PON OLT and ONU products have been delivered in batches, and breakthroughs have been made in key optoelectronic technologies of 50G PON OLT products, with technical indicators reaching the industry-leading level.
Hantian Tiancheng applied for a patent to reduce the surface bump defects of silicon carbide epitaxial films, which can improve the quality of silicon carbide epitaxial wafers
Information from the National Intellectual Property Administration shows that Hantian Tiancheng Electronic Technology (Xiamen) Co., Ltd. has applied for a patent titled "A method for reducing bump defects on the surface of silicon carbide epitaxial films", publication number CN 119786337 A, and the application date is December 2024.
The patent abstract shows that the present invention relates to a method for reducing the surface Bump defects of silicon carbide epitaxial film, comprising the following steps: the first step: growing a buffer layer and an epitaxial layer; the second step: keeping the pressure in the reaction chamber constant, changing the hydrogen flow rate to 10-50slm, and introducing 50-100slm of argon gas for the first stage of cooling; the third step: when the temperature in the reaction chamber drops to 1000-1200°C, the second stage of cooling is carried out; the fourth step: instantly reducing the hydrogen flow rate to 0slm, the argon flow rate to 10-30slm, and restoring the internal pressure of the reaction chamber; the fifth step: purging in an argon atmosphere, turning off the argon gas after the purging is completed, and taking out the epitaxial wafer after standing. This method can reduce the Bump defect density on the surface of the silicon carbide epitaxial film to 0.03cm‑2 or less, thereby improving the quality of silicon carbide epitaxial wafers and improving the performance of semiconductor devices.
Increasing the sensitivity of non-chemically amplified molecular resist by a cascade esterification
Abstract
A molecular glass functionalized with γ-hydroxy carboxylate and triphenylsulfonium groups (ADTPS) was successfully synthesized and characterized. The solubility, thermal stability, and film-forming ability of the molecular glass were evaluated, confirming the feasibility of using it as a resist material. The lithographic performances of ADTPS resist were studied by electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL). It exhibited a high sensitivity for EBL with a dose-to-clear of only 145 µC/cm2. A line/space (L/S) down to 22 nm resist pattern was achieved by EBL. The ADTPS resist was further evaluated by EUVL, achieving performance down to 20 nm HP pattern at a dose of 13.3 mJ/cm2, which is more than 10 times higher than that of most triphenyl sulfonium based non-chemically amplified resists (n-CARs). The increasing sensitivity is attributed to the occurrence of cascade esterification, which produces a subsequent lactone or ester and leads to an enormous change in solubility. The ADTPS molecular resist significantly improves the sensitivity, offering a promising pathway for the design and development of high-sensitive molecular n-CARs.
Single-frame multiwavelength coherent diffraction imaging using extreme ultraviolet high-harmonic comb sources.
Abstract
Coherent diffraction imaging (CDI) enables diffraction-limited high-resolution imaging without using high-quality lenses. It will be desirable to combine it with multiple spectral light sources to achieve chemically resolved imaging capability. Here, we demonstrate a single-frame multiwavelength CDI approach that can provide complex transmittance images of a sample at multiple wavelengths. The superior performance of our method in terms of rapid convergence and improved image quality over current methods has been validated through high-harmonic extreme ultraviolet experiments. The feasibility of our method for single-frame chemical imaging is also demonstrated by the simulation. This work can pave the way for implementing in situ chemical imaging with tabletop high-harmonic generation extreme ultraviolet sources.