Fuga Gallium Industry has made a breakthrough in gallium oxide MOCVD homoepitaxial technology, helping the downstream vertical power electronic device industry to land
Recently, Hangzhou Fuga Gallium Technology Co., Ltd. (hereinafter referred to as Fuga Gallium), an incubated enterprise of the Hangzhou Institute of Optics and Fine Mechanics, has made important technological breakthroughs in the research and development of gallium oxide MOCVD homoepitaxial thin films. It has homoepitaxially grown a thin film with a thickness of more than 10 microns on Fuga Gallium's gallium oxide single crystal substrate. Verified by national authoritative testing agencies, this technology has reached the international leading level. Related standardized products will be launched in April 2025, providing key material support for high-end equipment such as new energy vehicle high-voltage platforms and smart grid flexible transmission devices.
The test results of the third-party testing agency, China National Institute of Metrology, show that the background carrier concentration of the MOCVD epitaxial film is controlled as low as 3.6E15 cm-3, and the mobility reaches 172.7 cm2/V·s. The successful development of high-quality gallium oxide homoepitaxial film based on MOCVD technology will help the rapid implementation of the vertical high-voltage power electronic device industry above 3300V in the future.
MOCVD epitaxial growth technology has the advantages of high growth crystal quality, good thickness uniformity, fast deposition speed, and precise doping control. It has been applied in large-scale mass production in the second-generation and third-generation semiconductor industries such as gallium arsenide and gallium nitride. For a long time, MOCVD epitaxial growth of gallium oxide thin films has also had problems such as high background carrier concentration and high defect density.
Fuga Gallium uses MOCVD technology, based on its self-produced gallium oxide substrate products, and through substrate surface optimization, multi-step epitaxial growth and other process strategies, it has greatly improved the crystal quality and thickness of the epitaxial film, and achieved gallium oxide homoepitaxial films with low background carrier concentration and high mobility, and its comprehensive performance indicators have reached the international advanced level . The successful development of MOCVD homoepitaxial films with a thickness of more than 10 microns shows that the MOCVD epitaxial technology route has the ability to mass-produce thick, high-quality gallium oxide homoepitaxial wafers, and can provide material support for the development of vertical gallium oxide power devices.