Depends, we don't know how long these tools have been in the wild.
Chinese semiconductor thread II
- Thread starter vincent
- Start date
Shanxi CETC's newly developed silicon carbide chemical vapor deposition equipment has reached industry-leading technical indicators
Shanxi China Electronics Technology Co., Ltd., an enterprise in the Shanxi Transformation and Comprehensive Reform Demonstration Zone, has independently developed silicon carbide chemical vapor deposition equipment targeting the domestic semiconductor market demand. Its technical indicators have reached the industry-leading level, and it can coat the core components of key semiconductor equipment with silicon carbide materials, helping the equipment to better support the development of my country's semiconductor industry.
The silicon carbide chemical vapor deposition equipment independently developed by Shanxi China Electronics Technology Co., Ltd. is the key equipment for executing this coating process. It can prepare silicon carbide coatings for the core components of silicon/silicon carbide epitaxial equipment, metal organic chemical vapor deposition equipment, etc., which are now in increasing demand.
The equipment has two furnace forms: horizontal and vertical. It adopts a high-precision temperature control system to achieve precise control of the temperature of the deposition chamber. It is equipped with an efficient vacuum system and uses thermal field/flow field numerical simulation technology to simulate and analyze the process. After multiple process optimization and debugging, the equipment has greatly improved its production efficiency, successfully achieving a purity of ≥99.9999% for coated products, a thickness of 100μm±10% for silicon carbide coated products, and key technical indicators such as main crystal form, crystal orientation, and hardness have reached the domestic leading level. At present, the equipment has been used and recognized by many leading domestic industry customers.
The silicon carbide chemical vapor deposition equipment independently developed by Shanxi China Electronics Technology Co., Ltd. is the key equipment for executing this coating process. It can prepare silicon carbide coatings for the core components of silicon/silicon carbide epitaxial equipment, metal organic chemical vapor deposition equipment, etc., which are now in increasing demand.
The equipment has two furnace forms: horizontal and vertical. It adopts a high-precision temperature control system to achieve precise control of the temperature of the deposition chamber. It is equipped with an efficient vacuum system and uses thermal field/flow field numerical simulation technology to simulate and analyze the process. After multiple process optimization and debugging, the equipment has greatly improved its production efficiency, successfully achieving a purity of ≥99.9999% for coated products, a thickness of 100μm±10% for silicon carbide coated products, and key technical indicators such as main crystal form, crystal orientation, and hardness have reached the domestic leading level. At present, the equipment has been used and recognized by many leading domestic industry customers.
(001) β-Ga2O3 epitaxial layer grown by in-situ pulsed aluminum atom-assisted metal organic chemical vapor deposition
The National Engineering Research Center for Wide Bandgap Semiconductors published a research result titled "(001) β-Ga 2 O 3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD" in the authoritative journal Journal of Materiomics under Elsevier. This research innovatively proposed the pulsed aluminum atom assisted growth technology, successfully breaking through the key technical bottleneck of gallium oxide epitaxial material preparation, and laying the foundation for the research and development of a new generation of high-power electronic devices.
As a representative of ultra-wide bandgap semiconductor materials, gallium oxide has important strategic value in the fields of ultra-high voltage power electronics and deep ultraviolet detection. However, when using metal organic chemical vapor deposition (MOCVD) technology to prepare (001) crystal plane β-Ga 2 O 3 epitaxial layers, there are difficulties such as high surface roughness and high interface defect density, which seriously restrict the performance and reliability of devices. How to achieve high-flatness and low-defect thin film epitaxial growth has become a global research focus in this field.
In response to the above challenges, the team of researchers innovatively proposed an in-situ pulsed aluminum atom-assisted growth method. By precisely controlling the timing and concentration of pulsed aluminum atoms, a triple action mechanism is achieved during the epitaxial growth process: directional nucleation, aluminum atoms can serve as preferential nucleation sites to optimize the lattice arrangement orientation; inhibition of side reactions, effectively inhibiting the generation and desorption of by-products, and reducing oxygen vacancy defects; interface reconstruction, promoting atomic diffusion, weakening random island nucleation, and significantly improving the interface quality between the epitaxial layer and the substrate.
Experimental data show that the surface roughness (RMS) of the epitaxial layer prepared by the new method is reduced by more than 50%, the full width at half maximum (FWHM) of the X-ray rocking curve is as low as 45.2 arc seconds, and the oxygen vacancy defect density is reduced by an order of magnitude. The research team also observed the phenomenon of epitaxial orientation rotation for the first time, and proposed a theoretical model for the correlation between the rotation angle and surface flatness, providing new ideas for the precise control of epitaxial growth of materials.
As a representative of ultra-wide bandgap semiconductor materials, gallium oxide has important strategic value in the fields of ultra-high voltage power electronics and deep ultraviolet detection. However, when using metal organic chemical vapor deposition (MOCVD) technology to prepare (001) crystal plane β-Ga 2 O 3 epitaxial layers, there are difficulties such as high surface roughness and high interface defect density, which seriously restrict the performance and reliability of devices. How to achieve high-flatness and low-defect thin film epitaxial growth has become a global research focus in this field.
In response to the above challenges, the team of researchers innovatively proposed an in-situ pulsed aluminum atom-assisted growth method. By precisely controlling the timing and concentration of pulsed aluminum atoms, a triple action mechanism is achieved during the epitaxial growth process: directional nucleation, aluminum atoms can serve as preferential nucleation sites to optimize the lattice arrangement orientation; inhibition of side reactions, effectively inhibiting the generation and desorption of by-products, and reducing oxygen vacancy defects; interface reconstruction, promoting atomic diffusion, weakening random island nucleation, and significantly improving the interface quality between the epitaxial layer and the substrate.
Experimental data show that the surface roughness (RMS) of the epitaxial layer prepared by the new method is reduced by more than 50%, the full width at half maximum (FWHM) of the X-ray rocking curve is as low as 45.2 arc seconds, and the oxygen vacancy defect density is reduced by an order of magnitude. The research team also observed the phenomenon of epitaxial orientation rotation for the first time, and proposed a theoretical model for the correlation between the rotation angle and surface flatness, providing new ideas for the precise control of epitaxial growth of materials.
Ah OK so they want to handle the entire world market over to Deepseek by literally giving the rest of the world including extremely pro US but nonwhite countries only 7% of computational resources.
And when that happens they'll moan about that one too.
SiCarrier was founded in 2021. Naura is more a 15 years old. Experience matters in this industry. It's the difference between Intel and TSMC and ASML and Nikon,Canon.
Yes and no, depends on a lot things. As others point out they have a lot of differentiating products that doesn't exist in China and cannot be imported. I do think the will have trouble with another young company in metrology that already shipped products 2 years ago but that will depend on performance and service. My guess is that their products has been used in production from quite a while in secret.
Experience does matter but its value isn’t linear. 15 years more experience doesn’t mean 15x better. Some tools are easier to reach acceptable levels of reliability and performance than others. Depends on inherent tolerance and operational dynamics of the task.
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