On the afternoon of March 4, 2025, Sichuan Puzhou Dadi City Industrial Silver Technology Development Co., Ltd. and Singapore TOPO Electronics Co., Ltd.nic Pte, LTD) successfully signed a cooperation agreement, marking an important step for both parties in the semiconductor field.
According to the agreement, the two parties will jointly establish a joint venture company focusing on ultra-high voltage silicon carbide high-power chip projects. The project aims to promote the research and development and production of silicon carbide chips to meet the market's urgent demand for high-performance, high-voltage power devices. As the core product of the third-generation semiconductor materials, silicon carbide chips have significant advantages such as high temperature resistance, high voltage resistance, and low loss, and are widely used in new energy vehicles, charging piles, photovoltaic power generation, and high-voltage transmission.
This cooperation is not only a strategic choice for both parties to complement each other's strengths, but also a positive response to the current trend of the semiconductor industry. By integrating Sichuan Puzhou Dadi's advantages in industrial resources and market expansion, and Singapore Topu's experience in chip technology research and development and international operations, the joint venture is expected to achieve breakthrough progress in the field of ultra-high voltage silicon carbide chips. In the future, the two parties will work together to promote the implementation of the project, accelerate the mass production of silicon carbide chips, and help the upgrading and development of the global semiconductor industry.