Chinese semiconductor thread II
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New progress in the research and development of 13.5nm extreme ultraviolet lithography light source in China—— Breakthrough in high conversion efficiency
Lin Nan's team from the Shanghai Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, has achieved a 3.42% conversion efficiency of 1 μm solid laser to 13.5 nm extreme ultraviolet light on the laser-driven plasma extreme ultraviolet (LPP-EUV) light source experimental platform they established, and the single pulse energy of 13.5 nm extreme ultraviolet at the main focus exceeded 20 mJ, which is at the international and domestic leading level. The LPP-EUV light source experimental platform established and the research results of the new mechanism of extreme ultraviolet generation by laser plasma carried out with the help of this platform provide technical support for the localization research and development of solid laser-driven LPP-EUV lithography light sources, which is of great significance for China to independently carry out the research and development of EUV lithography and its key devices and technologies.
Lin Nan's team from the Shanghai Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, has achieved a 3.42% conversion efficiency of 1 μm solid laser to 13.5 nm extreme ultraviolet light on the laser-driven plasma extreme ultraviolet (LPP-EUV) light source experimental platform they established, and the single pulse energy of 13.5 nm extreme ultraviolet at the main focus exceeded 20 mJ, which is at the international and domestic leading level. The LPP-EUV light source experimental platform established and the research results of the new mechanism of extreme ultraviolet generation by laser plasma carried out with the help of this platform provide technical support for the localization research and development of solid laser-driven LPP-EUV lithography light sources, which is of great significance for China to independently carry out the research and development of EUV lithography and its key devices and technologies.
Putting the picture of the researcher is unnecessary.
Signed contract for annual production of 1.5 million carats of diamond chip substrate project
On March 16, the Shufu Guangzhou Industrial City (Park) Management Committee and Xinjiang Carbon-based Core Materials Technology Co., Ltd. held a signing ceremony for the carbon-based core material project with an annual output of 1.5 million carats of diamond chip substrates, injecting new impetus into economic development.
It is understood that the project is located in Shufu Guangzhou Industrial City (Park), with a total investment of about 2.4 billion yuan, and will be built in two phases. The first phase will invest about 1.2 billion yuan, and is scheduled to start construction in March 2025 and be completed and put into production at the end of the year. After production, the annual output value will be about 700 million yuan, the profit and tax will be about 100 million yuan, and it will drive employment for more than 100 people.
The ultra-high voltage silicon carbide high-power chip project was successfully signed!
On the afternoon of March 4, 2025, Sichuan Puzhou Dadi City Industrial Silver Technology Development Co., Ltd. and Singapore TOPO Electronics Co., Ltd.nic Pte, LTD) successfully signed a cooperation agreement, marking an important step for both parties in the semiconductor field.
According to the agreement, the two parties will jointly establish a joint venture company focusing on ultra-high voltage silicon carbide high-power chip projects. The project aims to promote the research and development and production of silicon carbide chips to meet the market's urgent demand for high-performance, high-voltage power devices. As the core product of the third-generation semiconductor materials, silicon carbide chips have significant advantages such as high temperature resistance, high voltage resistance, and low loss, and are widely used in new energy vehicles, charging piles, photovoltaic power generation, and high-voltage transmission.
This cooperation is not only a strategic choice for both parties to complement each other's strengths, but also a positive response to the current trend of the semiconductor industry. By integrating Sichuan Puzhou Dadi's advantages in industrial resources and market expansion, and Singapore Topu's experience in chip technology research and development and international operations, the joint venture is expected to achieve breakthrough progress in the field of ultra-high voltage silicon carbide chips. In the future, the two parties will work together to promote the implementation of the project, accelerate the mass production of silicon carbide chips, and help the upgrading and development of the global semiconductor industry.
Anyone knowledged enough to share insight as to why is China investing so much heavily in RISC-V while they have a fully domestic ISA available (LoongArch)? I know RISC-V is open source but its source are still based on the west. If they try to incorporate LoongArch instead, the company would hugely benefit from feedback loop of all these domestic Companies like Alibaba (and many more). This way LoongArch and LoongSong will become much of a prominent player in ISA ecosystem. One thing China lacks currently is the indigenous ISA. Imagine if there's a fully domestic ISA which is as prominent as ArmISA or RISC-V or x86.
I think this is one of the very very few area China needs to promote complete domestic alternative. Not just something based on RISC-V. Whatever work they are doing right now is benefiting RISC-V which still is based on the west (even though its open source)
I think this is one of the very very few area China needs to promote complete domestic alternative. Not just something based on RISC-V. Whatever work they are doing right now is benefiting RISC-V which still is based on the west (even though its open source)