Chinese semiconductor thread II
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This is when the equipment starts to get fun.
Weice Technology plans to invest 1.3 billion yuan to build the second phase of the Nanjing test project to expand high-end chip testing capacity
Weice Technology issued an announcement stating that its wholly-owned subsidiary Nanjing Weice Semiconductor Technology Co., Ltd. (hereinafter referred to as "Nanjing Weice") intends to use no more than RMB 1.3 billion to invest in the Weice integrated circuit chip wafer-level and finished product testing base project (Phase II).
According to reports, the new project is planned to be located in Pukou Economic Development Zone, Nanjing City, Jiangsu Province, with a planned land area of 47 acres. The implementing entity is Nanjing Weice Semiconductor Technology Co., Ltd.
Weice Technology said that this project is actually an expansion project for integrated circuit chip wafer-level testing and finished product testing. After the project is completed, the company's production capacity, especially the "high-end chip testing" and "high-reliability chip testing" capacity will be further improved.
Weice Technology issued an announcement stating that its wholly-owned subsidiary Nanjing Weice Semiconductor Technology Co., Ltd. (hereinafter referred to as "Nanjing Weice") intends to use no more than RMB 1.3 billion to invest in the Weice integrated circuit chip wafer-level and finished product testing base project (Phase II).
According to reports, the new project is planned to be located in Pukou Economic Development Zone, Nanjing City, Jiangsu Province, with a planned land area of 47 acres. The implementing entity is Nanjing Weice Semiconductor Technology Co., Ltd.
Weice Technology said that this project is actually an expansion project for integrated circuit chip wafer-level testing and finished product testing. After the project is completed, the company's production capacity, especially the "high-end chip testing" and "high-reliability chip testing" capacity will be further improved.
Shanghai Integrated Circuit Industry Investment Fund Phase III established
Shanghai Integrated Circuit Industry Investment Fund Phase III Partnership (Limited Partnership) was established recently with a capital contribution of RMB 530 million. The executive partner is Shanghai Integrated Circuit Industry Investment Fund Management Co., Ltd., whose business scope includes equity investment, investment management, asset management and other activities with private equity funds. It is jointly funded by Shanghai State-owned Capital Investment Co., Ltd. and Shanghai Integrated Circuit Industry Investment Fund Management Co., Ltd.
It is understood that the first phase of the Shanghai Integrated Circuit Industry Fund was established in 2016 with a fundraising scale of 28.5 billion yuan. The fund was jointly funded by Shanghai Science and Technology Venture Capital (Group), SAIC Group, National Integrated Circuit Industry Investment Fund and other units, and focused on investing in the integrated circuit manufacturing industry.
Through market-oriented operation and professional management, the fund has made investment layouts in the entire industrial chain of Shanghai's integrated circuit industry. The invested projects include major manufacturing production line projects in the integrated circuit industry such as Shanghai Huali Integrated Circuit Manufacturing Co., Ltd., SMIC South Integrated Circuit Manufacturing Co., Ltd. and Shanghai Jetta Semiconductor Co., Ltd., as well as ACM Shanghai in the field of semiconductor equipment, Shanghai Advanced Silicon Semiconductor Co., Ltd. in the field of materials, and Unigroup Spreadtrum (Shanghai) Technology Co., Ltd. in the field of design.
Shanghai Integrated Circuit Industry Investment Fund Phase III Partnership (Limited Partnership) was established recently with a capital contribution of RMB 530 million. The executive partner is Shanghai Integrated Circuit Industry Investment Fund Management Co., Ltd., whose business scope includes equity investment, investment management, asset management and other activities with private equity funds. It is jointly funded by Shanghai State-owned Capital Investment Co., Ltd. and Shanghai Integrated Circuit Industry Investment Fund Management Co., Ltd.
It is understood that the first phase of the Shanghai Integrated Circuit Industry Fund was established in 2016 with a fundraising scale of 28.5 billion yuan. The fund was jointly funded by Shanghai Science and Technology Venture Capital (Group), SAIC Group, National Integrated Circuit Industry Investment Fund and other units, and focused on investing in the integrated circuit manufacturing industry.
Through market-oriented operation and professional management, the fund has made investment layouts in the entire industrial chain of Shanghai's integrated circuit industry. The invested projects include major manufacturing production line projects in the integrated circuit industry such as Shanghai Huali Integrated Circuit Manufacturing Co., Ltd., SMIC South Integrated Circuit Manufacturing Co., Ltd. and Shanghai Jetta Semiconductor Co., Ltd., as well as ACM Shanghai in the field of semiconductor equipment, Shanghai Advanced Silicon Semiconductor Co., Ltd. in the field of materials, and Unigroup Spreadtrum (Shanghai) Technology Co., Ltd. in the field of design.
Zhejiang University team's latest "Science": Piezoelectric effect of half-Heusler narrowband semiconductor materials
Professor Zhu Tiejun's team from the School of Materials Science and Engineering at Zhejiang University observed the piezoelectric effect of three half-Heusler narrow-bandgap semiconductor materials, TiNiSn, ZrNiSn, and TiCoSb, for the first time, and prepared a prototype piezoelectric device based on TiCoSb-[111] cut wafers. The device exhibited a stable piezoelectric response and achieved capacitor charging. At the same time, the piezoelectric response of the half-Heusler material remained stable from room temperature to 1173K. These results show that half-Heusler narrow-bandgap semiconductor materials have potential application prospects in the field of piezoelectricity. The relevant research results were published online in the international academic journal Science on March 14, 2025 under the title "Piezoelectricity in half-Heusler narrow-bandgap semiconductors". The research was funded by Zhejiang Natural Science Foundation and others.
Piezoelectric transduction technology can realize the direct conversion between mechanical energy and electrical energy, and is widely used in sensing, acoustics, imaging, driving, and energy harvesting. In the past, the research on piezoelectric materials was mainly focused on ceramics or single crystal materials with wide bandgap ( Eg > 2.0 eV) and low conductivity. In contrast, narrow bandgap ( Eg < 1.0 eV) semiconductor materials usually have higher conductivity, which is not conducive to the effective charge accumulation to form a stable voltage response. Therefore , there are few experimental studies on the piezoelectric effect of narrow bandgap semiconductor materials.
Half-Heusler materials are a material system with many family members and rich electronic structures. They have received extensive attention in the fields of thermoelectrics, magnetism, topological insulators, spin electronics, etc. In 2012, David Vanderbilt, a member of the U.S. National Academy of Sciences, and others predicted through theoretical calculations that half-Heusler systems have piezoelectric effects. However, due to their narrow bandgap characteristics and the existence of intrinsic defects, the room temperature conductivity of half-Heusler materials is more than ten orders of magnitude higher than that of traditional piezoelectric ceramics, which makes direct observation of their piezoelectric response face huge experimental challenges. So far, there have been no experimental reports on the piezoelectric effect of half-Heusler narrowband semiconductor materials in the world.
Aiming at this field, in order to determine the piezoelectric coefficient, Professor Zhu Tiejun's team first prepared [111]-cut wafers of TiNiSn, ZrNiSn and TiCoSb half-Heusler single crystals (Figure 1). The vertical piezoelectric strain constant of the [111]-cut wafer was obtained by the quasi-static piezoelectric constant test method (Figure 1), and then based on the relationship between the shear piezoelectric strain coefficient d 14 and the 3 1/2 multiple of the vertical piezoelectric strain constant of the [111]-cut wafer, the shear piezoelectric strain coefficient d 14 of TiNiSn, ZrNiSn and TiCoSb was experimentally determined for the first time to be approximately 8 pC/N, 38 pC/N and 33 pC/N, respectively. Among them, the shear piezoelectric coefficients of ZrNiSn and TiCoSb single crystals are relatively high values among non-centrosymmetric, non-polar piezoelectric materials, higher than wide bandgap piezoelectric materials such as SiO 2 and GaSb.
The team developed a piezoelectric device based on TiCoSb-[111] cut wafers, which exhibited a stable voltage response under different force magnitudes and durations and was able to continuously charge the capacitor (Figure 2). In addition, the team found that the half-Heusler material exhibited good thermal stability in the range of room temperature to 1173K, and its piezoelectric response also remained stable in this temperature range.
The above results show that half-Heusler narrowband semiconductor materials have potential application prospects in the field of piezoelectricity. The discovery of the piezoelectric effect of narrowband semiconductors provides new ideas for the design of new piezoelectric materials. In addition, narrowband semiconductors usually have more significant photoelectric, thermoelectric and other effects, which also provides new possibilities for the development of electronic devices with synergistic multifunctional effects such as piezoelectric-photoelectric and piezoelectric-thermoelectric.
Professor Zhu Tiejun, Researcher Fu Chenguang and Associate Professor Huang Yuhui from the School of Materials Science and Engineering of Zhejiang University are the co-corresponding authors of the paper, postdoctoral fellow Huang Yi is the first author of the paper, doctoral students Lv Fu and Han Xu are the co-first authors, Zhejiang University is the first corresponding unit of the paper, and the collaborators of this work include Professor Li Fei from Xi'an Jiaotong University and Professor Wu Di from Nanjing University.
Professor Zhu Tiejun's team from the School of Materials Science and Engineering at Zhejiang University observed the piezoelectric effect of three half-Heusler narrow-bandgap semiconductor materials, TiNiSn, ZrNiSn, and TiCoSb, for the first time, and prepared a prototype piezoelectric device based on TiCoSb-[111] cut wafers. The device exhibited a stable piezoelectric response and achieved capacitor charging. At the same time, the piezoelectric response of the half-Heusler material remained stable from room temperature to 1173K. These results show that half-Heusler narrow-bandgap semiconductor materials have potential application prospects in the field of piezoelectricity. The relevant research results were published online in the international academic journal Science on March 14, 2025 under the title "Piezoelectricity in half-Heusler narrow-bandgap semiconductors". The research was funded by Zhejiang Natural Science Foundation and others.
Piezoelectric transduction technology can realize the direct conversion between mechanical energy and electrical energy, and is widely used in sensing, acoustics, imaging, driving, and energy harvesting. In the past, the research on piezoelectric materials was mainly focused on ceramics or single crystal materials with wide bandgap ( Eg > 2.0 eV) and low conductivity. In contrast, narrow bandgap ( Eg < 1.0 eV) semiconductor materials usually have higher conductivity, which is not conducive to the effective charge accumulation to form a stable voltage response. Therefore , there are few experimental studies on the piezoelectric effect of narrow bandgap semiconductor materials.
Half-Heusler materials are a material system with many family members and rich electronic structures. They have received extensive attention in the fields of thermoelectrics, magnetism, topological insulators, spin electronics, etc. In 2012, David Vanderbilt, a member of the U.S. National Academy of Sciences, and others predicted through theoretical calculations that half-Heusler systems have piezoelectric effects. However, due to their narrow bandgap characteristics and the existence of intrinsic defects, the room temperature conductivity of half-Heusler materials is more than ten orders of magnitude higher than that of traditional piezoelectric ceramics, which makes direct observation of their piezoelectric response face huge experimental challenges. So far, there have been no experimental reports on the piezoelectric effect of half-Heusler narrowband semiconductor materials in the world.
Aiming at this field, in order to determine the piezoelectric coefficient, Professor Zhu Tiejun's team first prepared [111]-cut wafers of TiNiSn, ZrNiSn and TiCoSb half-Heusler single crystals (Figure 1). The vertical piezoelectric strain constant of the [111]-cut wafer was obtained by the quasi-static piezoelectric constant test method (Figure 1), and then based on the relationship between the shear piezoelectric strain coefficient d 14 and the 3 1/2 multiple of the vertical piezoelectric strain constant of the [111]-cut wafer, the shear piezoelectric strain coefficient d 14 of TiNiSn, ZrNiSn and TiCoSb was experimentally determined for the first time to be approximately 8 pC/N, 38 pC/N and 33 pC/N, respectively. Among them, the shear piezoelectric coefficients of ZrNiSn and TiCoSb single crystals are relatively high values among non-centrosymmetric, non-polar piezoelectric materials, higher than wide bandgap piezoelectric materials such as SiO 2 and GaSb.
The team developed a piezoelectric device based on TiCoSb-[111] cut wafers, which exhibited a stable voltage response under different force magnitudes and durations and was able to continuously charge the capacitor (Figure 2). In addition, the team found that the half-Heusler material exhibited good thermal stability in the range of room temperature to 1173K, and its piezoelectric response also remained stable in this temperature range.
The above results show that half-Heusler narrowband semiconductor materials have potential application prospects in the field of piezoelectricity. The discovery of the piezoelectric effect of narrowband semiconductors provides new ideas for the design of new piezoelectric materials. In addition, narrowband semiconductors usually have more significant photoelectric, thermoelectric and other effects, which also provides new possibilities for the development of electronic devices with synergistic multifunctional effects such as piezoelectric-photoelectric and piezoelectric-thermoelectric.
Professor Zhu Tiejun, Researcher Fu Chenguang and Associate Professor Huang Yuhui from the School of Materials Science and Engineering of Zhejiang University are the co-corresponding authors of the paper, postdoctoral fellow Huang Yi is the first author of the paper, doctoral students Lv Fu and Han Xu are the co-first authors, Zhejiang University is the first corresponding unit of the paper, and the collaborators of this work include Professor Li Fei from Xi'an Jiaotong University and Professor Wu Di from Nanjing University.
YMTC and CXMT
