Chinese semiconductor thread II

[OptimusLion]

Yangtze Memory Technologies Patents Semiconductor Device, Leveraging AI for Advanced 3D Memory

Yangtze Memory Technologies Co., Ltd. has obtained a patent titled "Semiconductor Devices, Manufacturing Methods, Three-Dimensional Memory and Storage Systems", with the authorization announcement number CN114551571B. This breakthrough not only demonstrates China's strong strength in the semiconductor field, but also injects new impetus into the innovative research and development of three-dimensional memory. As a leading company in the domestic semiconductor industry, Yangtze Memory's acquisition of this patent is undoubtedly a significant step forward in its technological innovation.

 

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Anhui Wuzhou Semiconductor obtains patent for etching device for semiconductor chip production, which can ensure the purity of etching solution


Anhui Wuzhou Semiconductor Materials Co., Ltd. obtained a patent called "An etching device for semiconductor chip production", with authorization announcement number CN222530379U and application date of February 2024.

The patent abstract shows that the utility model discloses an etching device for semiconductor chip production, which relates to the technical field of etching devices, including a fixing mechanism, a lifting mechanism is arranged on the side of the fixing mechanism, a collecting mechanism is arranged inside the fixing mechanism, and an exhaust mechanism is also arranged on the upper surface of the fixing mechanism. The fixing mechanism of the device vertically clamps and fixes the chip, and at the same time, observation windows are arranged on the front and rear surfaces of the etching box. The staff can use the two observation windows to observe the etching effects on both sides of the chip. Therefore, when this device performs double-sided etching, it is very simple for the staff to observe the etching conditions on both sides of the chip. A collecting mechanism is also installed on the upper cover of the device. During the rising process of the upper cover, the collecting plate with micropores on the surface can be driven to rise, and the waste residue produced by the etching in the etching liquid can be picked up by using the rising collecting plate. After that, the staff removes the waste residue together with the chip, so that the waste residue in the etching liquid can be cleaned to ensure the purity of the etching liquid.

 

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Yunnan Fuduan Technology obtains patent for low-stress narrow-band UV lens for photolithography

Yunnan Fuduan Technology Co., Ltd. has obtained a patent entitled "A low-stress narrow-band UV lens for a photolithography machine", with authorization announcement number CN112987513B and application date of March 2021.


The invention relates to the technical field of lens design, manufacturing and adjustment for ultraviolet lithography machines, and specifically to a low-stress narrow-band ultraviolet lens for lithography machines. The design comprises a front lens group, an intermediate lens group, a light bar group, an eccentric adjustment mechanism group and a rear lens group. The eccentric cylindrical surface of the intermediate lens group frame cooperates with the rear lens group frame, and the outer eccentric lens frame cooperates with the rear lens group frame to form a double eccentric structure. The positional relationship between the intermediate lens group frame and the outer eccentric lens frame is adjusted to meet the coincidence of the optical axis of the double eccentric adjustment mechanism group and the optical axis of the intermediate lens group. The edge of the eccentric mechanism pressure ring is fixed on the rear lens group frame, and the inner eccentric lens frame and the outer eccentric lens frame are fixed in the rear lens group frame. All lens working surfaces of the lens are not subjected to mechanical stress, so the imaging quality of the lens can be well guaranteed, the distortion can be reduced, and the coaxiality of the lens can be conveniently adjusted.

 

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North Huachuang obtains semiconductor structure and other related patents

Beijing North Huachuang Microelectronics Equipment Co., Ltd. has obtained a patent entitled "Semiconductor structure, method for preparing semiconductor structure and semiconductor device", with authorization announcement number CN115050750B and application date of June 2022.


The present application discloses a semiconductor structure, a method for preparing the semiconductor structure, and a semiconductor device, and relates to the semiconductor field. A semiconductor structure includes a substrate and a stacking structure, the stacking structure includes a plurality of unit layer structures, each unit layer structure includes a dielectric layer, a first buffer layer, and a conductive layer, the first buffer layer is arranged between the dielectric layer and the conductive layer; the stacking structure also includes a second buffer layer, the second buffer layer is arranged between the conductive layer of one of the two adjacent unit layer structures and the dielectric layer of the other; the lattice parameters of the first buffer layer and the second buffer layer are each between the first lattice parameter and the second lattice parameter. A method for preparing a semiconductor structure, used for preparing the above-mentioned semiconductor structure. A semiconductor device includes the above-mentioned semiconductor structure. The present application can at least solve the problem of delamination between the conductive layer and the dielectric layer.

 

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Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences has made progress in the field of graphene-based chip heat dissipation

The team led by Ding Guqiao, a researcher at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and He Peng, an associate researcher, has long been committed to the research on the controllable preparation of graphene materials and the application of device thermal management. Recently, they have made important research progress in the field of high-heat-load graphene membrane structure regulation and preparation. The relevant results were published in Advanced Science and Carbon.

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Changxin Storage Technology Co., Ltd. obtains patents for semiconductor device manufacturing methods and semiconductor devices

Changxin Storage Technology Co., Ltd. has once again received good news, successfully obtaining a patent authorization titled "Semiconductor Device Manufacturing Method and Semiconductor Device", with announcement number CN111106106B. The application time of this patent dates back to October 2018, demonstrating the company's deep accumulation in the semiconductor field and its determination to continue to innovate.


The present disclosure provides a semiconductor device manufacturing method and a semiconductor device, belonging to the field of semiconductor technology. The method includes: providing a semiconductor substrate, including a first region and a second region, the upper surface of the first region is a dielectric layer; using a first mask layer to form a first conductive layer on the upper surface of the second region; using a second mask layer to selectively etch the dielectric layer and the first conductive layer to form a bit line contact hole in the first region and a gate electrode in the second region; forming a barrier layer; forming a second conductive layer to fill the gap between the bit line contact hole and the gate electrode, and cover the upper surface of the gate electrode; using a third mask layer to selectively etch the second conductive layer and the barrier layer to form a bit line structure in the first region and a gate structure in the second region. The present disclosure can improve the bit line contact, reduce the RC delay of the capacitor, and improve the poor contour depression of the peripheral gate structure, thereby improving device performance.

 

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Total investment of 3.05 billion yuan! AMEC builds R&D base in Chengdu, Sichuan


AMEC Semiconductor Equipment (Sichuan) Co., Ltd. was established, with Yin Zhiyao as the legal representative, a registered capital of RMB 100 million, and wholly owned by AMEC. The company's business scope includes the semiconductor equipment field, covering the manufacturing of special equipment for semiconductor devices, the sales of special equipment for semiconductor devices, the sales of special electronic equipment, the manufacturing of special electronic equipment, the manufacturing of semiconductor lighting devices, and the manufacturing of electronic components.

AMEC announced that it plans to invest in the establishment of a wholly-owned subsidiary, AMEC Semiconductor Equipment (Chengdu) Co., Ltd., in Chengdu Hi-Tech Zone to build a research and development and production base and southwest headquarters project. It said that the implementation of this project will help the company expand its integrated circuit equipment business scope, enhance its research and development capabilities and expand its production capacity, and consolidate its dominant position in the field of high-end semiconductor equipment.

According to the disclosure, AMEC will invest approximately RMB 3.05 billion between 2025 and 2030 to build a research and development center, manufacturing base, office space and ancillary facilities in Chengdu Hi-tech Zone, equipped with advanced automated production lines and high-precision testing equipment to meet mass production needs. In addition, the company will actively promote the settlement of upstream and downstream supply chain companies in Chengdu Hi-tech Zone, and promote the formation of a semiconductor high-end equipment industry chain cluster.

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Hefei Xingji Microelectronics has obtained a patent for a symmetrical dual-telecentric large-field imaging system and lithography equipment

Hefei Xingji Microelectronics Equipment Co., Ltd. obtained a patent called "Symmetrical dual-telecentric large field of view imaging system and lithography equipment", with authorization announcement number CN222506645U and application date of January 2024.

The patent abstract shows that the utility model discloses a symmetrical dual-telecentric large-field imaging system and lithography equipment , which includes: a first lens group, a second lens group , an aperture, a third lens group, and a fourth lens group arranged in sequence along the optical axis from the object plane to the image plane, the first lens group and the third lens group are completely symmetrical with the aperture as the symmetry plane, and the second lens group and the fourth lens group are completely symmetrical with the aperture as the symmetry plane; wherein the first lens group includes the first lens, the second lens, and the third lens; the second lens group includes the fourth lens, the fifth lens, the sixth lens, and the seventh lens; the third lens group includes the eighth lens, the ninth lens, the tenth lens, and the eleventh lens; and the fourth lens group includes the twelfth lens, the thirteenth lens, and the fourteenth lens. The utility model arranges 14 lenses symmetrical to the aperture so that the aberrations generated by the imaging system compensate for each other, which greatly reduces the difficulty and cost of processing, detection, and calibration while improving the imaging quality.

 

[tokenanalyst]

 

[tokenanalyst]

Xiamen Silan Chiphong Semiconductor trial production will start next year, aiming at the global market!​

The total investment of the Shilan Jihong project is 12 billion yuan
Construction in two phases
The total construction area is 234,500 square meters
Phase I investment: 7 billion yuan
It is expected to be initially put into operation in the fourth quarter of 2025
Trial production in the first quarter of 2026
After reaching full capacity, the annual production capacity will be 420,000 8-inch SiC chips

After the second phase is put into production, the total production capacity will be increased to 720,000 pieces per year
Become the world's leading
8-inch SiC power device production line
The project uses SiC MOSFET as its core product
Mainly serving new energy vehicles
Main drive inverter, photovoltaic inverter, smart grid , etc.
High Demand Areas

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