Chinese semiconductor thread II

OptimusLion

Junior Member
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Suzhou GuoXin Technology Co., Ltd. and Anhui WenTian Quantum Technology Co., Ltd. (hereinafter referred to as "Wentian Quantum") established the "Quantum Chip Joint Laboratory" to jointly tackle key problems. The quantum security chip CCM3310SQ-T launched by them has been completed and successfully delivered in small batches. The chip has been successfully applied to a certain communication project


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gelgoog

Lieutenant General
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very interesting, apparently Samsung finally raised yield on its 4nm process to 80% after several years. More importantly, looks like Chinese ASIC designs will be fabbed there. I am guessing many will be for AI inference.
How long until that gets sanctioned by the US as well? South Korea isn't exactly independent given the US military bases there. And even if no bases existed they can always threaten the Koreans with pulling access to tools or materials.
 

tokenanalyst

Brigadier
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BiRen Technology and Softcom Computing jointly promote DeepSeek AI all-in-one machine to enable intelligent upgrades in thousands of industries​


The rapid rise of the domestic large-scale model DeepSeek is driving the rapid deployment of AI technology in the form of "all-in-one machine" to commercial scenarios such as government, enterprise, finance, and manufacturing. With its tight integration of computing power, advanced algorithms, and dedicated hardware, the all-in-one machine provides users in various industries with an efficient and flexible localized deployment solution, realizing the hardware advantage of "software and hardware collaboration, out-of-the-box use", greatly reducing the threshold for computing power use and improving the efficiency of AI training and reasoning.

As an important promoter of domestic AI computing power, BiRen Technology has quickly completed support for DeepSeek's full range of distillation models by relying on the compatibility capabilities of its independently developed BiLiTM series of products. In a short period of time, it has taken the lead in realizing the commercialization of AI scenarios with the all-in-one product form as the fulcrum.

Recently, BiRen Technology and iSoftStone Computer jointly launched the "Super N810T DeepSeek AI All-in-One" equipped with BiRen Technology's BiLi™ 106B. This cooperation aims to provide enterprise customers with a "ready-to-use, efficient and secure" full-stack all-in-one solution through collaborative innovation of software and hardware.

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tokenanalyst

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Jingsheng Electromechanical: 12-inch epitaxial growth equipment was sold and shipped and new customers were developed.​


It is learned that on February 21, Jingsheng Electromechanical said in an institutional survey that under the background of the continued recovery of the semiconductor industry, downstream customers have gradually planned and implemented production expansion, and the company's original 8-12 inch large silicon wafer equipment market has been further improved, and it has quickly achieved market breakthroughs in power semiconductor equipment and advanced process equipment. The company's 8-inch silicon carbide epitaxial equipment and optical measurement equipment have been successfully sold, and the 12-inch three-axis thinning and polishing machine has been expanded to domestic leading packaging customers. The 12-inch silicon decompression epitaxial growth equipment has achieved sales and shipments and expanded new customers, and orders for related equipment continue to grow.

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6-8 inch silicon carbide substrates are shipped in batches

Jingsheng Mechanical & Electrical has built a large-scale production capacity for 6-8 inch silicon carbide substrates and achieved batch shipments, actively promoted the capacity expansion of 8-inch silicon carbide substrates, and expanded overseas customers; at the same time, the company's core parameter indicators for mass-produced silicon carbide substrates have reached the industry's first-class level. On the basis of maintaining its existing technological advantages, the company will drive development with innovation, pay attention to the development of and make scientific layouts to maintain its technological leadership.

In the field of silicon carbide equipment, the company has developed 6-8 inch silicon carbide crystal growth equipment, slicing equipment, thinning equipment, polishing equipment, epitaxial equipment, measurement equipment, etc., realizing domestic substitution of silicon carbide epitaxial equipment, and innovatively launched double-wafer silicon carbide epitaxial equipment, greatly improving epitaxial production capacity, and successfully .

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tokenanalyst

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Wafer box handling and loading and unloading for a domestic semiconductor company​

The materials for this project are wafers placed in wafer boxes, and AMR needs to deliver them to each machine for processing according to the process flow. It is necessary to link with the customer's MES system, and the material delivery request is sent through MES, calling AMR to move the wafer box to the corresponding machine. In order to alleviate the processing bottleneck, three-dimensional material racks are planned to store and manage the processing materials, realizing dynamic intelligent delivery..

Challenges
1. Dust-free workshop, with many machines, requires precise delivery and zero tolerance for delivery errors;
2. There are many suspended protruding objects in the workshop, and collisions need to be avoided;
3. Wafers are fragile and require shock absorption during transportation.

Solution
Using the Oasis600UL composite robot, the FMS scheduling system connects the factory's MES and WMS systems to automatically deliver materials to the corresponding machines that require materials.
Hardware: 2 Oasis600UL composite robots, 8 Oasis600UL+ customized intelligent material racks, 1 server, 1 network solution;
Software: Matrix deployment software, FMS scheduling management system, central control system.​

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tokenanalyst

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Enhancement of spectral performance in gadolinium-based BEUV sources by supplying pre-formed plasma with cavity-confined targets.​

Abstract​


Gadolinium laser-produced plasma (Gd-LPP) represents a promising BEUV lithography light source for future semiconductor manufacturing. In this work, we seek to further enhance the Gd-LPP spectral performance by integrating a cavity-confined target with the existing dual-pulse laser scheme. By regulating the pre-formed plasma with the cavity-confined target, a higher level of spectral purity was achieved in comparison to the flat target, reaching a maximum of 4.35% at a pre-main pulse delay of around 40 ns. Notably, even with extended pre-main pulse delays, the spectral purity of the cavity-confined target drops slowly and remains comparable to the peak spectral purity value achieved by that flat target. Simulations indicate that a gradual density gradient at the ablation front for the cavity-confined target is key to achieving high spectral purity and this is attributed to the fact that the cavity-confined target maintains this gradient when a main pulse laser is irradiated. Our findings offer an approach for enhancing spectral performance by optimizing the pre-formed plasma in a dual pulse scheme.

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2. Experimental setup​

The experiment employs two Q-switched Nd: YAG lasers, and the experimental setup is depicted in Fig.
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. The pre-pulse laser (6 ns, 532 nm, InnoLas Compact 400) and main-pulse laser (8 ns, 1064 nm, Continuum Surelite III) are collinearly focused on the target via a plano-convex lens (f = 100 mm). Due to chromatic dispersion, the focal lengths of 532 nm pre-pulse laser and 1064 nm main pulse laser are different. The target is positioned at the main pulse laser focal point, while the pre-pulse laser is slightly defocused. The focal spot diameters of the pre-pulse laser and main pulse laser are measured to be approximately 180 μm and 100 μm, respectively. The laser energies employed in the experiment were 25 mJ for the pre-pulse and 400 mJ for the main pulse, respectively. At this power density, the pre-pulse laser ablates the target, generating plasma but not sufficient to produce BEUV radiation. The cavity-confined target, which was fabricated via femtosecond laser processing, features cylindrical cavities with a diameter of 200 μm and a depth of 100 μm. The diameter of the cavity is set to be approximately the same size as the pre-pulse laser focal spot, thereby ensuring effective confinement of the pre-formed plasma. Similarly, the depth of the cavity is set to ensure that the plasma is confined without obstructing the propagation of BEUV radiation. The time-integrated BEUV spectra of the plasma were collected by a flat-field spectrometer positioned at an angle of 45 degrees relative to the main pulse laser, with a resolution of approximately 0.02 nm. The wavelength calibration of the spectra was conducted using aluminum spectra. To guarantee the precision and dependability of the experimental outcomes, a novel cavity-confined structure was irradiated in each trial, and all devices were synchronized using a digital pulse signal generator (Stanford, DG645). The experimental chamber pressure was maintained at 10−3 Pa.​


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4. Conclusion and outlook​

In conclusion, beyond the existing dual laser pulse scheme with flat target, we have further optimized the spectral performance of gadolinium-based BEUV sources by regulating the expansion of pre-formed plasma through the cavity structure. As evidenced by the experimental data, the cavity-confined target retains the advantages associated with the traditional flat target dual pulse scheme while exhibiting enhanced spectral purity, achieving the highest SP of 4.35%. In particular, the cavity-confined target achieves a similar effect to the colliding plasma scheme in slowing down the rarefaction of pre-formed plasma through a simpler experimental design. Even at a pre-main pulse delay of 150 ns, the spectral purity of the cavity-confined target remains comparable to that of the flat target at its optimal pre-main delay of 40 ns. The enhanced spectral purity here are attributed to, as simulations and corresponding interferograms verification have revealed, that pre-formed plasma under cavity-confined conditions exhibits a protruding structure at an early stage of expansion. Obviously, the extended lifetime of optimal plasma densities makes our dual laser pulse scheme more applicable. One of the cases comes to where CO2 laser is used as the main pulse laser, an extended lifetime of optimal plasma densities can facilitate a better match with a CO2 laser’s long pulse width, and it is expected to bring additional EUV enhancement over the flat target. On the other side, the protruding structure of pre-formed plasma is favorable to boost its relatively low laser absorption when CO2 laser is used [
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]. Moreover, this protruding structure of pre-formed plasma offers advantageous for improving the convenience in the laser plasma experiment with orthogonal dual-pulse laser configuration where main laser beam is parallel to the target surface and avoids the experimental difficulty caused by the over close proximity between the laser beam and target surface when a flat target configuration is employed [
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]. In our subsequent research, we will build upon these findings by varying the diameter of the cavity structure to further optimize the regulation of pre-formed plasma on dual-pulse scheme.

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