A number of semiconductor projects were signed in Quzhou involving gallium oxide, aluminum nitride single crystal substrates, etc.
The projects signed on site involved multiple semiconductor-related projects, including Zhejiang Xin Gu Semiconductor Industrial Park, semiconductor core components project, aluminum nitride single crystal substrate project, and 6-inch compound substrate project.
Zhejiang Core Valley Semiconductor Industrial Park
The project plans to invest a total of 1.77 billion yuan, covering an area of 221 mu, to build the Zhejiang Core Valley Semiconductor Industrial Park. After reaching full production, it is expected to achieve an annual operating income of 1.8 billion yuan and an annual tax revenue of 90 million yuan.
Semiconductor core components project
The project plans to invest a total of 1 billion yuan, lease a plant of 54,000 square meters, and build an annual production capacity of 200,000 stacked piezoelectric ceramic actuators, 100,000 high-power piezoelectric ceramic transducers, 3,100 silicon parts silicon rings/silicon shower heads, and 105,000 sets of semiconductor core parts. After reaching full production, it is expected to achieve an annual operating income of 660 million yuan and an annual tax of 65 million yuan.
Aluminum nitride single crystal substrate project
The project plans to invest a total of 1 billion yuan, covering an area of 150 mu, and build a production line with an annual output of 50,000 pieces of 2-6 inch AlN single crystal substrates. After reaching full production, it is expected to achieve an annual operating income of 1 billion yuan and an annual tax revenue of 150 million yuan.
6-inch compound (gallium arsenide, indium phosphide, gallium oxide) substrate project
The project plans to invest a total of 1 billion yuan, covering an area of 30 mu, and building a plant of about 20,000 square meters, mainly to build a 6-inch compound substrate production line. After reaching full production, it is expected to achieve an annual operating income of 1 billion yuan and an annual tax revenue of 50 million yuan.
Zhejiang Core Valley Semiconductor Industrial Park
The project plans to invest a total of 1.77 billion yuan, covering an area of 221 mu, to build the Zhejiang Core Valley Semiconductor Industrial Park. After reaching full production, it is expected to achieve an annual operating income of 1.8 billion yuan and an annual tax revenue of 90 million yuan.
Semiconductor core components project
The project plans to invest a total of 1 billion yuan, lease a plant of 54,000 square meters, and build an annual production capacity of 200,000 stacked piezoelectric ceramic actuators, 100,000 high-power piezoelectric ceramic transducers, 3,100 silicon parts silicon rings/silicon shower heads, and 105,000 sets of semiconductor core parts. After reaching full production, it is expected to achieve an annual operating income of 660 million yuan and an annual tax of 65 million yuan.
Aluminum nitride single crystal substrate project
The project plans to invest a total of 1 billion yuan, covering an area of 150 mu, and build a production line with an annual output of 50,000 pieces of 2-6 inch AlN single crystal substrates. After reaching full production, it is expected to achieve an annual operating income of 1 billion yuan and an annual tax revenue of 150 million yuan.
6-inch compound (gallium arsenide, indium phosphide, gallium oxide) substrate project
The project plans to invest a total of 1 billion yuan, covering an area of 30 mu, and building a plant of about 20,000 square meters, mainly to build a 6-inch compound substrate production line. After reaching full production, it is expected to achieve an annual operating income of 1 billion yuan and an annual tax revenue of 50 million yuan.
