In a sense yeah. Basically trying to model how much support and production of key inputs (number of patents, research output, number of enterprises, amount and distribution of financing) is needed before you have self sustaining development. What you need to get to a place where the market will continue the flywheel for you.
Chinese semiconductor thread II
- Thread starter vincent
- Start date
Statements from Semiconductor Industry Association:
In other words:
It seems like Hygon and Zhaoxin are like those un-innovative deadbeat ICE car ventures between Chinese and foreign companies.
China needs a BYD for the chinese CPU sector.
please read before comment.
its Loongson and Phytium, they are actually the leading players in mainland, China for CPUs. Hygon doing well too but Zhaoxin stuck in low end.
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very interesting
CXMT DDR5 is a really big deal for China's AI data center build out. If they can keep this up, Chinese data center memory chips will get very people.
CXMT DDR5 is a really big deal for China's AI data center build out. If they can keep this up, Chinese data center memory chips will get very people.
The latest progress of GAA devices of the Institute of Microelectronics has reduced parasitic resistance and on-state current to about 1 mA/μm (Huawei and Professor Chen Yijian have similar international patents to reduce parasitic capacitance).
The paper based on this research result, " High-Performance Gate-All-Around FETs with 100 Ω Parasitic Resistance and 965 μA/μm On-State Current using Quasi-Self-Aligned Landing Pads " (DOI: 10.1109/LED.2024.3505926), was recently published in the IEEE Electron Device Letters journal. Graduate student Jiang Renjie from the Institute of Microelectronics is the first author, and researchers Zhang Qingzhu and Yin Huaxiang are co-corresponding authors of the paper. This research was supported by the Strategic Priority Research Program (Class A) of the Chinese Academy of Sciences and the National Natural Science Foundation of China.
Paper link:
The paper based on this research result, " High-Performance Gate-All-Around FETs with 100 Ω Parasitic Resistance and 965 μA/μm On-State Current using Quasi-Self-Aligned Landing Pads " (DOI: 10.1109/LED.2024.3505926), was recently published in the IEEE Electron Device Letters journal. Graduate student Jiang Renjie from the Institute of Microelectronics is the first author, and researchers Zhang Qingzhu and Yin Huaxiang are co-corresponding authors of the paper. This research was supported by the Strategic Priority Research Program (Class A) of the Chinese Academy of Sciences and the National Natural Science Foundation of China.
Paper link:
Desperately hoping the Huawei 5 nm is GAA just so we can get some real performance measurements.
Semiconductor equipment R&D and production headquarters project settled in Qingdao West Coast New Area
On February 5, the semiconductor equipment R&D and production headquarters project with a total investment of 1 billion yuan by Haichuang Intelligent Equipment (Yantai) Co., Ltd. settled in Qingdao West Coast New Area. This project is the second semiconductor high-end equipment project to land in the new area this year. The project will select a site in the new area to build a semiconductor equipment R&D and production headquarters, develop and manufacture wafer-level permanent bonding, temporary bonding, debonding equipment and other products, and plans to combine domestic industry needs and its own technological advantages to develop into a well-known domestic semiconductor equipment company.It is reported that Haichuang Intelligent Equipment (Yantai) Co., Ltd. was established in 2017 with a registered capital of 100 million yuan. The company has established strategic cooperation with world-renowned MEMS chip manufacturing companies, integrating the international core team of semiconductor equipment technology from the United States, Japan, and South Korea, and is committed to realizing the localization of high-end semiconductor equipment and core components. It has laid out a diversified product line and is committed to building a professional, large-scale, and technologically advanced semiconductor equipment technology service platform to promote the development of the domestic semiconductor industry. Products include permanent bonding equipment Bonder for 6-12 inch wafers, temporary bonding/debonding equipment Debonder, magnetron sputtering coating equipment PVD (Sputter), plasma enhanced chemical vapor deposition equipment PEVCD, etching equipment Etcher, coating and developing equipment Coater & Developer, semiconductor detection X-RAY, etc.
Breakthrough! High-performance polycrystalline diamond heat sink
The team from Harbin Institute of Technology used MPCVD technology to excite gases (hydrogen, methane, and nitrogen) through microwaves in a vacuum environment, allowing carbon atoms to "grow" into diamonds on a silicon substrate.
Key breakthroughs:
Methane concentration: Reduce the methane ratio (from 8% to 5%), reduce impurity carbon deposition, and improve crystal quality.
Growth temperature: Increase the temperature (930~950℃) to promote lateral expansion of grains and make the structure denser.
Experimental results: high thermal conductivity + low warpage The team prepared five groups of samples (S1-S5) and found that:
Optimal performance: Sample S3 (5% methane, temperature 930°C) has a thermal conductivity of up to 1208 W/(m·K) and a warpage value of only 37 microns, far exceeding similar international products (such as Element Six's 1000-2200 W/(m·K)).
Balance between speed and quality: Although reducing methane will slow down the growth rate (5.8 μm/h), the thermal conductivity is significantly improved, and the warpage is smaller, making post-processing easier.
X-ray diffraction and Raman spectroscopy revealed that:
<111> Crystal plane dominance: crystal arrangement is more regular and grain boundary defects are reduced.
Low methane + high temperature: inhibits the formation of amorphous carbon, larger grain size, and smoother heat conduction path.
Compared with leading foreign companies Element Six and Sumitomo Electric Industries, this study achieved the preparation of polycrystalline diamond heat sinks with a thermal conductivity of more than 1200 W/(m·K) by optimizing process parameters, while ensuring a high growth rate (5.8 microns/hour) and a low warpage value (37 microns). Through subsequent process improvements, it is expected that the preparation of high thermal conductivity diamond heat sinks at a higher rate can be achieved, thereby effectively reducing its production cost.
Future application prospects
Polycrystalline diamond heat sinks have broad application prospects in the following fields:
- High-performance computing: used for heat dissipation of high-power chips such as CPU and GPU.
- 5G/6G communications: used for heat dissipation of RF devices and power amplifiers.
- New energy vehicle electronics: used for heat dissipation of microwave inverters and power modules.
- Aerospace: Used for heat dissipation of high reliability electronic equipment.
By continuously optimizing the preparation process, polycrystalline diamond heat sinks are expected to become an important component of future efficient heat dissipation solutions, providing strong support for improving the performance of electronic devices.
So if this breakthrough gets industrialize, megawatt radars and electronic warfare system on planes become possible?