Chinese semiconductor thread II
- Thread starter vincent
- Start date
proelite
Junior Member
You'll get half of the performance at best at quarter of the battery life.
China could probably reach 5nm and even 3nm without EUV using immersion and Self-Alignment techniques. Beyond 3nm is an open question.
The news seem to have hit the Western press as well:
Here is Phytium, another US sanctioned company which cannot manufacture at TSMC or Samsung foundry, launching new products using a new core design. Supposedly competitive with ARM Neoverse N2.
Just keep chanting the "low FinFET yields at SMIC" mantra dear US politicians and wish it to go away.
Last edited:
With what battery? And are battery techs comparable?
Is the scaling of performance tied solely to transistor density? And does process node correlate exactly to usable transistor density? Look up what dark silicon is.
TSMC US semiconductor fab is so doomed.
Chongqing's first AIC equity investment pilot fund was launched, with the first phase of 1 billion yuan invested in IC and other fields
According to Chongqing Liangjiang New Area, the " Chongqing Gongrong Innovation Private Equity Investment Fund " initiated by the Liangjiang Foundation, ICBC Chongqing Branch, ICBC Investment and Yufu Group recently completed industrial and commercial registration at the Liangjiang New Area Market Supervision Bureau, marking the city's first AIC (financial asset investment company) equity investment pilot fund to be launched in Liangjiang New Area .
According to reports, the "Chongqing Industrial and Financial Innovation Private Equity Investment Fund" was jointly established by Liangjiang High-Quality Fund Managed by Liangjiang Fund, ICBC Investment, and Chongqing Industrial Investment Fund. The initial scale is 1 billion yuan . It focuses on the construction of Chongqing's "33618" modern manufacturing cluster system and the "416" scientific and technological innovation layout. The investment direction focuses on high-quality scientific and technological innovation companies in the fields of intelligent connected new energy vehicles, integrated circuits, digital economy, etc. in the new area.
"The launch of the 'Chongqing Industrial and Financial Innovation Private Equity Investment Fund' is a phased achievement of Liangjiang New Area's promotion of the AIC equity investment pilot project." A relevant person in charge of the Liangjiang New Area Modern Service Industry Bureau said that the new area will take the launch of this fund as an opportunity to accelerate the guidance of major banks' AIC and other long-term capital and patient capital to support the high-quality development of Liangjiang New Area.
According to reports, the "Chongqing Industrial and Financial Innovation Private Equity Investment Fund" was jointly established by Liangjiang High-Quality Fund Managed by Liangjiang Fund, ICBC Investment, and Chongqing Industrial Investment Fund. The initial scale is 1 billion yuan . It focuses on the construction of Chongqing's "33618" modern manufacturing cluster system and the "416" scientific and technological innovation layout. The investment direction focuses on high-quality scientific and technological innovation companies in the fields of intelligent connected new energy vehicles, integrated circuits, digital economy, etc. in the new area.
"The launch of the 'Chongqing Industrial and Financial Innovation Private Equity Investment Fund' is a phased achievement of Liangjiang New Area's promotion of the AIC equity investment pilot project." A relevant person in charge of the Liangjiang New Area Modern Service Industry Bureau said that the new area will take the launch of this fund as an opportunity to accelerate the guidance of major banks' AIC and other long-term capital and patient capital to support the high-quality development of Liangjiang New Area.
Guangdong Xin Semiconductor's new 12-inch integrated circuit analog special process production line project (Phase III) is put into production
CanSemi has reached another major milestone in its development history. On December 28, on the occasion of the 40th anniversary of the establishment of Guangzhou Development Zone, the signing, completion and trial production of major projects in the fourth quarter of 2024 in Guangzhou Development Zone and the opening ceremony of CanSemi's new 12-inch integrated circuit analog feature process production line project (Phase III) were held as scheduled in the CanSemi Phase III project park. Sun Zhiyang, Deputy Secretary of the Guangzhou Municipal Party Committee and Mayor, Chen Jie, Member of the Standing Committee of the Guangzhou Municipal Party Committee, Executive Vice Mayor, Secretary of the Party Working Committee of Guangzhou Development Zone, and Secretary of the Huangpu District Party Committee, Jiang Zhitao, Deputy Mayor of Guangzhou Municipal People's Government, and other leaders attended the event to witness this historic moment together. This is not only an affirmation and encouragement for CanSemi Phase III, but also shows the expectations and confidence of all walks of life in the future development of CanSemi.
The total investment of the Phase III project is 16.25 billion yuan, covering an area of 280,000 square meters and a construction area of 450,000 square meters. The Phase III project adopts advanced 180-90nm process technology to create industrial-grade and automotive-grade analog feature process platforms. It is expected to increase the monthly production capacity by 40,000 wafers and reach a production value of approximately 4 billion yuan. The successful implementation of this project marks that CanSemi has made solid progress in technological innovation, capacity construction and other aspects, and also demonstrates the importance that Guangzhou Development Zone attaches to technological innovation and the continuous optimization of the business environment.
Hangzhou Gallium Semiconductor achieves breakthrough in gallium oxide substrate technology, helping customers realize 2400V enhancement mode transistors
Semiconductor Industry Network: According to the official account of "Gallen Semiconductor", in December 2024, Hangzhou Gallen Semiconductor Co., Ltd. (hereinafter referred to as "Gallen Semiconductor") made a major breakthrough in the field of ultra-wide bandgap semiconductor materials. The company worked with downstream customers to conduct in-depth device verification work on Gallium Ren Semiconductor's (010) surface gallium oxide semi-insulating substrate. An enhanced transistor with excellent performance was successfully prepared, with a breakdown voltage of up to 2429V. Compared with the device verification results of imported substrates, the performance indicators have been significantly improved. This achievement not only demonstrates Gallen Semiconductor's leading position in gallium oxide substrate technology, but also lays a solid foundation for the mass production and application of domestic gallium oxide substrates in power devices.
