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Chinese semiconductor thread II
- Thread starter vincent
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4H-SiC Position-sensitive Detector Working in Extreme Ultraviolet Wavelength Band
Extreme ultraviolet (EUV) detectors are essential components required in many cutting-edge applications. In this work, a 6.5 mm × 6.5 mm large-area 4H-SiC EUV position sensitive detector (PSD) has been design and fabricated. Based on a synchrotron radiation test system, the SiC PSD exhibits a relatively low position error of 63 μm, a low nonlinearity of 2.1% and a high position resolution of 8.5 μm. The detector also realizes a low dark current of 9 pA, a high responsivity of 0.06 A/W and a low photo-response non-uniformity of less than 1% at 13.5 nm. Together with the superior transient response and stable switching performance, the SiC PSDs present notable potential in high-end EUV position detection applications.
More garbage news from TrendForce. The reality is CXMT already has LPDDR5 in mass production (see their website) and DDR5 is expected to start shipping this year but no concrete news about it yet.
CXMT is manufacturing older memory nodes such as DDR3 under the GigaDevice brand with newer tools and newer processes.
Garbage analysis on his part. For example Nanya still operates a 200mm diameter wafer fab for these older DDR3 nodes. In such cases CXMT has a substantial cost advantage because of more modern 300mm tools and processes.
The benefits in terms of state subsidies enjoyed by CXMT are also enjoyed by foreign companies operating fabs in China such as SK Hynix and Samsung. The land is basically free and much of the cost of building the fab is subsidized. SK Hynix has huge fab operations in China.
If the yield was 20% then it wouldn't be in mass production. And the idea you will willingly operate a huge chunk of your fab capacity including expensive depreciating tools operating a non-yielding node when it could be producing something older at much higher yield, well, sounds fishy at best.
This report sounds way more realistic and in line with what you can glimpse from satellite photos of the CXMT fabs. i.e. they should be producing 100k in Hefei Fab1 + 50k in Hefei Fab2, with Hefei Fab 2 ramping up to 100k or similar.Currently 150K wpm, to add additional 50K wpm within next year:
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Well, that's quite a lot of juicy stuff! In particular, it is the first time I read (from some credible source) that HBM 2 is sampling to customers now. This is big if confirmed.
HBM 2 low volume production in Q2 2025...I have an idea who will be the first customer
Doesn't make sense to say they don't have shortage of Chips if people are having to line up for Mate70 series
Huawei is selling tens of millions of smartphones a year with SMIC made SoCs. And US government shills still continue to claim they have poor yields and cannot manufacture chips properly. Cambricon stock rose many fold, they are sanctioned from manufacturing their AI chips in the West, leaving SMIC as their only option. US government shills can continue denying the obvious but the fact seems to be that SMIC has fairly decent yields.
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There is no evidence that CXMT already mass produce LPDDR5. I haven't seen any teardown reviews which found CXMT LPDDR5 inside. Not to mention that mainstream mobile phone mainly use LPDDR5X nowadays，so I see no point for CXMT to mass produce LPDDR5 anyway
Teardown from WekiHome on bilibili.com for Mate 70 RS/Pro+/Pro. Screenshot is about NAND.
If we believe the conclusions from Techinsights, then the NAND chips on left and right are from SK Hynix because the die model numbers almost exactly match the one found in the Techinsights report. Now, the middle one is clearly a different NAND.
The author of the video has a couple of interesting claims:
1. The one used in Mate 70 Pro+ is much bigger, 11*13mm2 vs. 9*13mm2.
2. The packaging of the larger NAND is completely different. There's a layer of heat dissipation material on top.
3. The performance is different. The big one can be up to 25% slower.
I think these mean the big one is probably on a litho process that is one or two generations behind. Could this be a YMTC NAND? Actually, if someone has access to the Techinsights report, does it have a photo of the YMTC chip in Nova 13 Pro so that we can compare and see if they match?
If we believe the conclusions from Techinsights, then the NAND chips on left and right are from SK Hynix because the die model numbers almost exactly match the one found in the Techinsights report. Now, the middle one is clearly a different NAND.
The author of the video has a couple of interesting claims:
1. The one used in Mate 70 Pro+ is much bigger, 11*13mm2 vs. 9*13mm2.
2. The packaging of the larger NAND is completely different. There's a layer of heat dissipation material on top.
3. The performance is different. The big one can be up to 25% slower.
I think these mean the big one is probably on a litho process that is one or two generations behind. Could this be a YMTC NAND? Actually, if someone has access to the Techinsights report, does it have a photo of the YMTC chip in Nova 13 Pro so that we can compare and see if they match?
I quote from an earlier post from @huemens, Techinsights did say
(9) The recently released Huawei Nova 13 Pro exclusively uses memory and storage chips manufactured by Chinese IDMs, such as CXMT’s G3 12GB LPDDR5 for DRAM and YMTC’s Xtacking 3.0 232L TLC for NAND.
in their latest Mate 70 Pro teardown. And Nova 13 series (although data doesn't show what percentage is Nova 13 Pro) has been the 3rd best selling phone in China in the last couple of weeks, so I would consider it's likely CXMT LPDDR5 is already in mass production status.
What surprises me the most is that Nova 13 series is somehow the 3rd best selling phone right now. Did not see that coming.
Zhejiang Tongyue Optics applies for a patent for a compact extreme ultraviolet broadband spectrometer, improving spectral resolution
According to a report in the financial sector on December 12, 2024, information from the National Intellectual Property Administration showed that Zhejiang Tongyue Optical Technology Co., Ltd. applied for a patent called "A Compact Extreme Ultraviolet Broadband Spectrometer", publication number CN 119104151 A, and the application date was September 2024.
The patent abstract shows that the present invention discloses a compact extreme ultraviolet broadband spectrometer, including a laser plasma light source and a bearing mechanism, the bearing mechanism includes a light source cavity and a collection cavity whose axes are in the same straight line, the light source cavity is connected to the collection cavity through a first connecting tube, a spectroscopic element is arranged on the upper surface of the light source cavity, a non-periodic Al/Zr multilayer spherical reflector is arranged on the upper surface of the collection cavity, a CCD sensor is connected to the other side of the light source cavity through a second connecting tube, and a stray light suppression mechanism is arranged on the second connecting tube between the CCD sensor and the spectroscopic element. The present invention adopts the above-mentioned compact extreme ultraviolet broadband spectrometer, which avoids the additional space requirements and the introduction of additional aberrations caused by the use of reflective gratings while ensuring the spectral resolution and transmission efficiency, thereby improving the spectral resolution.
EUV components manufacturing system.
