Another interesting presentation on photoresist.
Nankai University gave a report titled "EUV Photoresist for 0.55NA Advanced Lithography".
In the report, they described their use of a heterogeneous metal nanocluster strategy combining titanium and zirconium metals to study their solubility, evaluate the applicability of different developers, and test their performance in electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography, while studying their etching resistance during pattern transfer. The study showed that R-4 photoresist can achieve a resolution of 25 nanometers at a low dose under electron beam lithography and a resolution of 50 nanometers under EUV lithography, with a sensitivity of up to 19.7 mJ·cm −2 . This study proposed an efficient heterometallic method for optimizing the lithographic performance of metal oxide cluster photoresists, which provides strong support for the development of commercially viable next-generation EUV photoresists.
Nankai University gave a report titled "EUV Photoresist for 0.55NA Advanced Lithography".
In the report, they described their use of a heterogeneous metal nanocluster strategy combining titanium and zirconium metals to study their solubility, evaluate the applicability of different developers, and test their performance in electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography, while studying their etching resistance during pattern transfer. The study showed that R-4 photoresist can achieve a resolution of 25 nanometers at a low dose under electron beam lithography and a resolution of 50 nanometers under EUV lithography, with a sensitivity of up to 19.7 mJ·cm −2 . This study proposed an efficient heterometallic method for optimizing the lithographic performance of metal oxide cluster photoresists, which provides strong support for the development of commercially viable next-generation EUV photoresists.
