Chinese semiconductor thread II
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Seems a lot of domestic semiconductor companies are making money this year. Esp those in semiconductor equipment manufacturering.
The first glass core to glass-based semiconductor special process production line in China has equipment moved in
The core equipment of the first glass-based semiconductor special process production line in China was successfully moved into BoXinCheng (Chongqing) Semiconductor Technology Co., Ltd. (referred to as "BoXinCheng"), marking the company's official entry into a new stage of capacity construction and improvement.
GlassCore focuses on the research, development and manufacturing of glass-based semiconductor products, and its products are widely used in industrial control, automotive electronics, electric power and other fields. With the continuous development of AI and data center technology, the market demand for products is continuing to grow.
The first phase of the Glass Core mass production line deployment brings together advanced semiconductor manufacturing equipment from home and abroad, including laser induction equipment, precision etching equipment, high-precision graphic equipment, advanced electrochemical deposition equipment, etc. The smooth deployment of a series of high-end equipment marks a milestone in the project from the plant decoration and equipment procurement stage to the equipment moving in and commissioning stage, and officially entered a new stage of capacity construction and improvement.
With the successful entry of advanced semiconductor manufacturing equipment from home and abroad, the company's new production line is advancing mass production in full swing, aiming to bring high-precision semiconductor products to global customers and inject strong impetus into the innovative development of the semiconductor industry. With unprecedented enthusiasm and determination, Boxincheng is fully promoting its technological innovation and development blueprint.
Changxin Storage applies for patents on semiconductor structure and manufacturing method to improve storage density of integrated circuits
The patent abstract shows that the embodiments of the present disclosure relate to the semiconductor field, and provide a semiconductor structure and preparation method. The semiconductor structure includes: a substrate, a bit line extending along a first direction in the substrate; a semiconductor column, the semiconductor column is located in the substrate, and the semiconductor column is electrically connected to the bit line; the semiconductor column includes a channel region and two doping regions located on both sides of the channel region, and one of the two doping regions is electrically connected to the bit line; the positive projection of the channel region in each of the two doping regions is located in each doping region. The word line extends along a second direction, the word line is located in the substrate, and the word line surrounds the channel region; a storage structure, the storage structure is located on the substrate, and the storage structure is electrically connected to the other doping region of the two doping regions; wherein the first direction intersects with the second direction. The disclosed semiconductor structure and preparation method can at least improve the storage density of the integrated circuit.
Good news for China litho industry
Feilihua achieves small batch production of ultra-low expansion quartz glass
Hubei Government Service Network announced the filing of the ultra-low expansion quartz glass research and development and production project of Hubei Feilihua Quartz Glass Co., Ltd. The ultra-low expansion quartz glass R&D and production project of Hubei Feilihua Quartz Glass Co., Ltd. is located in Jingzhou Economic and Technological Development Zone, Hubei Province.
According to the filing information, the project uses existing plant buildings and equipment to carry out intelligent upgrades and renovations on the furnace structure, lifting equipment control system, exhaust system, etc.; adds gas cabinets, material cabinets, evaporators, purification equipment and related detection devices, develops ultra-low expansion quartz glass for the demand for quartz glass materials for extreme ultraviolet (EUV) lithography machines, and builds a pilot production line .
According to China Powder Network, compared with other low-expansion quartz glass, SiO2 - TiO2 quartz glass has a lower thermal expansion coefficient, and can even achieve zero expansion or negative expansion within a certain temperature range. Therefore, titanium-doped quartz glass is also called ultra-low expansion quartz glass . The preparation methods of low-expansion quartz glass mainly include chemical vapor deposition, indirect synthesis and sol-gel methods. It has an extremely low thermal expansion coefficient and is a key material in high-tech fields such as optical components for semiconductor lithography equipment, astronomical telescope reflectors, and atomic clock cavities
In March this year, the State Intellectual Property Office announced a patent entitled "A production method and production device for low expansion coefficient quartz glass ingots", and the applicant was Hubei Feilihua Quartz Glass Co., Ltd. The invention relates to a method and device for producing a low expansion coefficient quartz glass ingot, and belongs to the technical field of low expansion coefficient quartz glass production. The invention uses concentrated hydrochloric acid as solvent and SiCl 4 and TiCl 4 as solutes to prepare a mixed raw material solution; due to the potential solvation effect, silicon atoms and doping atoms are uniformly dispersed in the mixed raw material solution in an ionic state. This solves the problem that the existing preparation process is difficult to accurately control the titanium content and cannot maintain its consistency during the production process, resulting in fluctuations in the distribution of doping elements in the quartz block, which aggravates the instability of the performance of the quartz material. The invention can reduce the fluctuation range of the doping material by 67%; the fluctuation range of the thermal expansion coefficient is reduced by 31%; it has positive significance for the preparation of low expansion coefficient quartz glass ingots.
Gas composition and flow measurement supplier: Sifang Optoelectronics (Wuhan) Instrument Co., Ltd. settles in Fanxiangtong
Sifang Optoelectronics (Wuhan) Instrument Co., Ltd. is a wholly-owned subsidiary of Sifang Optoelectronics Co., Ltd. (688665.SH). Its predecessor was Hubei Ruiyi Automation System Co., Ltd. established in 2010. It is a high-tech enterprise specializing in providing gas composition and flow measurement solutions, serving in the fields of environmental monitoring, process gas monitoring, and smart metering. Based on the advantages of Sifang Optoelectronics' core gas sensing technology platform, Sifang Instruments has developed a series of gas composition flow instruments based on technical principles such as non-dispersive infrared (NDIR), ultraviolet differential absorption spectroscopy (UV-DOAS), laser Raman (LRD), ultrasonic (Ultrasonic), thermal conductivity (TCD), and light scattering detection (LSD). The products are widely used in various industries such as environmental monitoring, metallurgy, coal chemical industry, and biomass energy, and play an important role in energy conservation and emission reduction. The portable infrared biogas analyzer, micro-flow infrared flue gas analyzer, and infrared gas analyzer independently developed and produced by Sifang Instruments have successively obtained national key new product certificates. The infrared gas analyzer won the Excellent Product Award of the Chinese Instrument Society, and its core technology won the Hubei Province Invention Patent Gold Award. Sifang Instruments' "Micro-flow Infrared Flue Gas Sensor Research and Industrialization" won the 2019 Industrial Base Strengthening Project Key "Product, Process" One-stop Application Plan Demonstration Project, and the company won the "One-stop" Application Plan Demonstration Enterprise.
SiliconCore Technology completed tens of millions of angel round financing, focusing on stacked chip EDA research and development.
Zhuhai Silicon Core Technology Co., Ltd. (" Silicon Core Technology ") successfully completed an angel round of financing of tens of millions of yuan, jointly invested by Jingcheng Capital and Zhuhai Science and Technology Venture Capital. This round of financing will be used to accelerate the development of its stacked chip EDA platform, further promote the innovation of point tool core technology, and help the commercialization of full-process products.
Since its establishment in December 2022, SiliconCore has always focused on the EDA research and development and industrialization of chiplets and 2.5D/3D stacked chips. As one of the few domestic stacked chip EDA manufacturers verified by top Fabless (chip design companies) and Foundry (advanced packaging factories), SiliconCore has filled the domestic gap in key technologies such as back-end layout and routing and DFT tools for 2.5D/3D integrated circuit design, providing strong support for the development of my country's EDA technology.
So they are developing EUV masks at Shanghai Synchrotron Radiation Facility
上海光源极紫外光刻掩模版检验光束线
来自上海高等研究院的Yong Wang作了题为《上海光源极紫外光刻掩模版检验光束线》的报告。
报告中提到上海光源（SSRF）建造了一条用于极紫外光刻掩模版检测的专用光束线。SSRF能够产生稳定且纯净的13.5nm的极紫外光，用于检测和审查极紫外光刻掩模版的缺陷。其通过使用傅里叶合成照明和离轴区平面成像技术，实现了高数值孔径（NA）和高分辨率。暗场散射模式被用来实现对掩模版缺陷的高灵敏检测。该光束线的设计目标是达到30nm的掩模版成像分辨率和30nm的检测灵敏度。检测（inspection）模式和检查（review）模式被集成在一个紧凑的腔体内，两种模式切换便捷。该光束线目前正在调试中，预计将在今年完成。
Yong Wang from Shanghai Advanced Research Institute gave a report titled "Shanghai Light Source EUV Lithography Mask Inspection Beamline".
The report mentioned that Shanghai Light Source (SSRF) has built a dedicated beamline for EUV lithography mask inspection. SSRF is able to generate stable and pure 13.5nm EUV light for detecting and reviewing defects in EUV lithography masks. It achieves high numerical aperture (NA) and high resolution by using Fourier synthesis illumination and off-axis plane imaging technology. Dark field scattering mode is used to achieve high-sensitivity detection of mask defects. The design goal of this beamline is to achieve a mask imaging resolution of 30nm and a detection sensitivity of 30nm. The inspection mode and review mode are integrated in a compact cavity, and the two modes can be easily switched. The beamline is currently being debugged and is expected to be completed this year.
No.02
EUV actinic reticle inspection beamline at Shanghai Synchrotron Radiation Facility
上海光源极紫外光刻掩模版检验光束线
来自上海高等研究院的Yong Wang作了题为《上海光源极紫外光刻掩模版检验光束线》的报告。
报告中提到上海光源（SSRF）建造了一条用于极紫外光刻掩模版检测的专用光束线。SSRF能够产生稳定且纯净的13.5nm的极紫外光，用于检测和审查极紫外光刻掩模版的缺陷。其通过使用傅里叶合成照明和离轴区平面成像技术，实现了高数值孔径（NA）和高分辨率。暗场散射模式被用来实现对掩模版缺陷的高灵敏检测。该光束线的设计目标是达到30nm的掩模版成像分辨率和30nm的检测灵敏度。检测（inspection）模式和检查（review）模式被集成在一个紧凑的腔体内，两种模式切换便捷。该光束线目前正在调试中，预计将在今年完成。
Yong Wang from Shanghai Advanced Research Institute gave a report titled "Shanghai Light Source EUV Lithography Mask Inspection Beamline".
The report mentioned that Shanghai Light Source (SSRF) has built a dedicated beamline for EUV lithography mask inspection. SSRF is able to generate stable and pure 13.5nm EUV light for detecting and reviewing defects in EUV lithography masks. It achieves high numerical aperture (NA) and high resolution by using Fourier synthesis illumination and off-axis plane imaging technology. Dark field scattering mode is used to achieve high-sensitivity detection of mask defects. The design goal of this beamline is to achieve a mask imaging resolution of 30nm and a detection sensitivity of 30nm. The inspection mode and review mode are integrated in a compact cavity, and the two modes can be easily switched. The beamline is currently being debugged and is expected to be completed this year.
Shengmei Shanghai: Revenue in the first three quarters of 2024 is close to 4 billion yuan, a year-on-year increase of 44.62%
ACM Semiconductor Equipment (Shanghai) Co., Ltd. (hereinafter referred to as "ACM Shanghai" or the company, 688082) disclosed the third quarter report of 2024. The report shows that in the first three quarters, the company achieved operating income of 3.977 billion yuan, a year-on-year increase of 44.62%; net profit attributable to shareholders of the parent company was 758 million yuan, a year-on-year increase of 12.72%; non-net profit was 741 million yuan, a year-on-year increase of 15.84%.
In the third quarter, the company's operating income was 1.573 billion yuan, a year-on-year increase of 37.96%; net profit attributable to shareholders was 315 million yuan, a year-on-year increase of 35.09%; non-net profit was 306 million yuan, a year-on-year increase of 31.41%. Both quarterly revenue and profit indicators achieved growth rates of more than 30%.
As a leading company in China's semiconductor equipment industry, Shengmei Shanghai has always adhered to the development strategy of "technological differentiation, product platformization, and customer globalization". In the first three quarters of this year, the company's R&D investment reached 612 million yuan, a year-on-year increase of 42.14%; in the third quarter, R&D investment reached 222 million yuan, a year-on-year increase of 16.48%; R&D investment continued to increase.
Looks like there is also another EUV facility , they plan to reach 12nm half pitch next year.
"Hefei Light Source - Low-energy Synchrotron Radiation Facility for Extreme Ultraviolet Lithography Research".
The Hefei Light Source (HLS) is built and operated by the National Synchrotron Radiation Laboratory (NSRL) of the University of Science and Technology of China. It is China's first dedicated synchrotron radiation facility and the only light source currently optimized in the vacuum ultraviolet (VUV) to soft X-ray region. HLS is equipped with an 800 MeV electron storage ring, 11 beamlines and 14 experimental stations.
Four of the beamlines can provide high-brightness and narrow-bandwidth extreme ultraviolet light in the 13.5nm wavelength range. HLS is equipped with experimental technologies such as EUV metrology, interferometric lithography, coherent diffraction imaging, and resonant soft X-ray scattering, which can support applied basic research and technology development in the field of EUV lithography. NSRL also plans to further improve the brightness and coherence of EUV light by increasing the electron beam current to more than 500 mA and reducing the electron beam emittance to less than 10 nm·rad. As the plan progresses, HLS will soon be converted into a dedicated EUV synchrotron radiation light source. In this report, the current status of Hefei Light Source and its experimental technology are introduced.
The Hefei Light Source (HLS) is built and operated by the National Synchrotron Radiation Laboratory (NSRL) of the University of Science and Technology of China. It is China's first dedicated synchrotron radiation facility and the only light source currently optimized in the vacuum ultraviolet (VUV) to soft X-ray region. HLS is equipped with an 800 MeV electron storage ring, 11 beamlines and 14 experimental stations.
Four of the beamlines can provide high-brightness and narrow-bandwidth extreme ultraviolet light in the 13.5nm wavelength range. HLS is equipped with experimental technologies such as EUV metrology, interferometric lithography, coherent diffraction imaging, and resonant soft X-ray scattering, which can support applied basic research and technology development in the field of EUV lithography. NSRL also plans to further improve the brightness and coherence of EUV light by increasing the electron beam current to more than 500 mA and reducing the electron beam emittance to less than 10 nm·rad. As the plan progresses, HLS will soon be converted into a dedicated EUV synchrotron radiation light source. In this report, the current status of Hefei Light Source and its experimental technology are introduced.