Sun Haiding's iGaN Laboratory at USTC studies three-dimensional vertically integrated microLED arrays to achieve new maskless deep ultraviolet lithography technology
Recently , the iGaN Laboratory of Professor Sun Haiding of the School of Microelectronics at the University of Science and Technology of China has developed a three-dimensional vertically integrated deep ultraviolet light-emitting device array with self-monitoring, self-calibration, and self-adaptation capabilities of light energy (mainly by preparing microLED arrays and detectors on both sides of a transparent sapphire substrate), and successfully applied them to a new maskless deep ultraviolet lithography technology. This study proposed for the first time to use deep ultraviolet micro light-emitting diode (micro-LED) arrays as light sources in maskless deep ultraviolet lithography technology. This technology proposes to utilize the characteristics of each micro-LED, such as high energy density, high resolution, high integration, and low energy consumption, to provide a new path and method for achieving high-precision deep ultraviolet lithography. This research result is titled "Vertically Integrated Self-Monitoring AlGaN-based Deep Ultraviolet Micro-LED Array with Photodetector Via a Transparent Sapphire Substrate Toward Stable and Compact Maskless Photolithography Application"
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