Major breakthrough in China's storage technology!
Recently, teams from Fudan University and Tsinghua University have made new breakthroughs in memory chips. The Fudan team developed an ultrafast flash memory integration process that can achieve ultrafast programming in 20 nanoseconds and non-volatile memory for 10 years; the Tsinghua University team proposed a new logic device based on magnetic oscillators, which is expected to reconstruct logic memory.
Fudan team develops ultra-fast flash memory integration technology, breaking the storage speed limit
Non-volatile memory refers to computer memory that can save data even when the power of the memory chip is turned off. Common non-volatile memories include flash memory, read-only memory (ROM), and some new technologies such as magnetic random access memory (MRAM), ferroelectric random access memory (FeRAM), phase change memory (PCM), etc. Among them, flash memory is the dominant non-volatile memory technology at present, but it is limited in speed.
According to the official news from the School of Microelectronics of Fudan University, recently, the paper "A scalable integration process for ultrafast two-dimensional flash memory" by the team of Zhou Peng and Liu Chunsen of Fudan University was published in the top international journal Nature Electronics. The team reported a scalable ultrafast 2D flash memory integration process that can be used to integrate 1,024 flash memory devices with a yield of over 98%.