my latest rant on semiconductors and overcapacity.
The least discussed topic is just how much overcapacity Intel has and no amount of state subsidies is rescuing it.
Chinese semiconductor thread II
- Thread starter vincent
- Start date
my latest rant on semiconductors and overcapacity.
The least discussed topic is just how much overcapacity Intel has and no amount of state subsidies is rescuing it.
huawei has successfully experimented and modified the 1980Di into more advanced version. One of the feature is deploying the new planar interferometer. Other experiment including using other liquid instead of water for immersion and other features.
Not just huawei but other domestic players are capable of repairing and replacing domestic parts for ASML and Canon scanner parts.
Not just huawei but other domestic players are capable of repairing and replacing domestic parts for ASML and Canon scanner parts.
Thanks for the info bro, it confirmed that aside from getting chip from SMIC, they do FAB their own chip. @siegecrossbow Sir this validate your previous post about Huawei getting 2 surplus NXT 1980I machine.
And also I may speculate that the improve DUVL 2 or the mythical SSA900a 22nm DUVL will be a Huawei product.
sorry, where do this come from? I don't doubt that they are experimenting with it somehow, but where is your source on this?
I mean it’s slower and iirc you are not stacking as many dram dies together. Main issue is getting yield higher. The more layers you have, the harder it is to have good enough yield iirc.
Guangdong Xinlianxin, a semiconductor advanced packaging process equipment manufacturer, completed its first round of external institutional financing
According to Zhuhai Science and Technology Venture Capital Co., Ltd. on July 30, Guangdong Xinlianxin Intelligent Technology Co., Ltd. (hereinafter referred to as Guangdong Xinlianxin) recently announced the completion of its first round of external institutional financing. Zhuhai Science and Technology Venture Capital, as the exclusive investor, invested and introduced it to the Zhuhai Greater Bay Area Intelligent Manufacturing Industrial Park.
It is reported that Guangdong Xinlianxin was established in September 2022. Based on its self-developed high-precision operation and control platform and the underlying core technology of high-speed linear motor modules, it is engaged in the research and development and production of advanced semiconductor packaging process equipment. It has successfully developed mass transfer needle puncture equipment and laser mass welding equipment, and shipped them to the leading packaging manufacturers in the display industry. It is the first domestic equipment supplier to complete the mass transfer process through the needle puncture route and pass the verification.
According to Zhuhai Science and Technology Venture Capital Co., Ltd., members of the Guangdong Xinlianxin team have held core positions in world-renowned transmission control and system manufacturers, have more than 20 years of experience in semiconductor equipment research and development, manufacturing and marketing, and have mastered cutting-edge core technologies such as motion control, machine vision, linear motors, software algorithms and laser processes. They have long provided products and services to core semiconductor equipment manufacturers such as ASML, AMAT, and KLA. Lin Zhengfeng, founder of Guangdong Xinlianxin, said that Xinlianxin has made breakthroughs in the fields of Mini/Micro LED direct display and backlight technology in less than two years since its establishment, and its products have been mass-produced and verified by industry-leading customers. Looking ahead, Xinlianxin will continue to deepen its research on mass transfer technology in the Mini/Micro LED field and semiconductor 3D stacked chip packaging technology.
A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric.
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University
Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University
Guangdong Ziener Technology Co., Ltd.,
Abstract
The application of GaN HEMTs on silicon substrates in high-voltage environments is significantly limited due to their complex buffer layer structure and the difficulty in controlling wafer warpage. In this work, we successfully fabricated GaN power HEMTs on 6-inch sapphire substrates using a CMOS-compatible process. A 1.5 µm thin GaN buffer layer with excellent uniformity and a 20 nm in situ SiN gate dielectric ensured uniformly distributed VTH and RON across the entire 6-inch wafer. The fabricated devices with an LGD of 30 µm and WG of 36 mm exhibited an RON of 18.06 Ω·mm and an off-state breakdown voltage of over 3 kV. The electrical mapping visualizes the high uniformity of RON and VTH distributed across the whole 6-inch wafer, which is of great significance in promoting the applications of GaN power HEMTs for medium-voltage power electronics in the future.
