Huawei applies for silicon carbide crystal growth patent
Huawei Technologies Co., Ltd. disclosed a patent for "baffle, chip, SiC crystal, crystal growth furnace and growth method". The application publication number is CN117822097A, and the application date is September 28, 2022. .
The patent abstract shows that the embodiments of the present application disclose a baffle, chip, SiC crystal, crystal growth furnace and growth method, which relate to the technical field of silicon carbide crystal and effectively improve the quality of the crystal. The specific plan is to set up a baffle in the crystal growth furnace. The channel of the baffle can change the movement direction of the gas phase source in the furnace, and change the movement direction of the gas phase source to obliquely upward, so that the gas phase source moves towards the facet of the seed crystal. Embodiments of the present application can increase the growth rate of crystals, increase the thickness and quality of crystals, and reduce microtube density. In addition, low-density graphite is selected as the baffle material. When the channel is blocked, the pores in the low-density graphite can allow gas to pass through, which can further reduce the content of inclusions in the crystal and improve the crystal quality.
The patent abstract shows that the embodiments of the present application disclose a baffle, chip, SiC crystal, crystal growth furnace and growth method, which relate to the technical field of silicon carbide crystal and effectively improve the quality of the crystal. The specific plan is to set up a baffle in the crystal growth furnace. The channel of the baffle can change the movement direction of the gas phase source in the furnace, and change the movement direction of the gas phase source to obliquely upward, so that the gas phase source moves towards the facet of the seed crystal. Embodiments of the present application can increase the growth rate of crystals, increase the thickness and quality of crystals, and reduce microtube density. In addition, low-density graphite is selected as the baffle material. When the channel is blocked, the pores in the low-density graphite can allow gas to pass through, which can further reduce the content of inclusions in the crystal and improve the crystal quality.
Currently, Huawei is making a comprehensive layout in the SiC industry. In terms of products, in April 2023, Huawei held a smart electric new product launch conference and released the "DriveONE new generation hyper-converged gold power platform" equipped with efficient SiC technology.
According to Huawei, DriveONE's new generation hyper-converged gold power platform is the industry's most efficient mass-produced high-voltage synchronous assembly solution. Based on high-efficiency SiC modules and Huawei's motor simulation and optimization platform, Huawei has created the industry's most efficient CLTC with 92% CLTC efficiency. The operating powertrain is 1.5 percentage points more efficient than similar solutions in the industry; this platform supports both 750V and 900+V dual voltage adaptation, and can achieve extremely fast 4C charging on a 250A fast charging pile in 7.5 minutes. The battery SOC is increased from 30% to 80%, and the battery life is increased by 250km.