Gallium Semiconductor launches 2-inch wafer-level gallium oxide single crystal substrate.
Hangzhou Gallium Semiconductor Co., Ltd. (hereinafter referred to as "Gallium Semiconductor") announced the official launch of a 2-inch wafer-level (010) gallium oxide single crystal substrate, setting another new milestone in the R&D and production of (010) substrates.According to reports, gallium oxide (β-Ga2O3) has the advantages of large bandgap width, high breakdown field strength, and large Baliga figure of merit, allowing power devices based on gallium oxide to have larger operating currents, voltages, and smaller On-resistance, device size and higher conversion efficiency are mainly used to prepare power devices, radio frequency devices and detection devices. They have broad applications in rail transit, smart grids, new energy vehicles, photovoltaic power generation, 5G mobile communications, national defense and military industries and other fields.
It is worth mentioning that previously, Gallium Semiconductor, in conjunction with the Advanced Semiconductor Research Institute of Zhejiang University Hangzhou International Science and Technology Innovation Center and the National Key Laboratory of Silicon and Advanced Semiconductor Materials, successfully prepared high-quality 6 inch unintentionally doped and conductive gallium oxide (β-Ga2O3) single crystal, and processed to obtain a 6-inch gallium oxide substrate. Gallium Semiconductor has also become the first industrialized company in China to master the preparation technology of 6-inch gallium oxide single crystal substrate.