Chinese semiconductor thread II

tphuang

Lieutenant General
Staff member
Super Moderator
VIP Professional
Registered Member

New progress has been made in the heterogeneous integration of thick-film gallium nitride and polycrystalline diamond in microelectronics​


Recently, the team of researcher Liu Xinyu from the High Frequency and High Voltage Center of the Institute of Microelectronics, in cooperation with Tianjin Zhongke Jinghe Company and other units, has made new progress in the field of direct bonding technology between thick film gallium nitride (GaN) and polycrystalline diamond. This study uses dynamic plasma polishing (DPP) technology to reduce the convex peak height on the polycrystalline diamond surface from 15nm to 1.2nm, obtaining a smooth surface with a surface roughness of 0.29nm, and combines it with the surface activation bonding method at room temperature. Achieved direct bonding of ~370μm GaN and ~660μm polycrystalline diamond substrate, with a bonding rate of ~92.4% and can withstand ambient temperatures of -55℃~250℃, providing an effective solution for wafer-level polycrystalline diamond bonding technical approach.

In recent years, the GaN/diamond heterogeneous integration method has become one of the effective ways to achieve high reliability and high power density GaN-based high electron mobility transistors (HEMTs). Direct wafer bonding technology has the advantages of high interface thermal conductivity and low thermal stress, and is promising in the integration of materials and devices, but it has high quality requirements such as material surface profile and roughness. At present, single crystal diamond can barely obtain the low surface roughness and high flatness required for direct bonding through chemical mechanical polishing technology (CMP), and small-size direct bonding can be achieved in the early stage. However, the large-size growth problem of single crystal diamond greatly limits its application, and the cost remains high. Polycrystalline diamond has the advantages of low cost and large size, but it has many problems such as many grain boundaries, uneven stress, irregular pits and ridges, etc., making it difficult for CMP technology to meet the requirements of surface roughness and surface flatness at the same time. and other requirements, it is difficult to achieve direct bonding. On the other hand, thick-film GaN can be combined with technologies such as Smart-Cut® to achieve compound semiconductor manufacturing and heterostructure construction, but thick-film GaN bonds also face greater stress issues. Currently, there are very few studies on the direct bonding of thick-film GaN and polycrystalline diamond.

View attachment 126972

This study uses plasma polishing technology with dynamic incident angles to solve surface morphology problems such as polycrystalline diamond flatness and roughness in a pressure-free state, combined with an ion beam surface activation bonding method assisted by in-situ silicon nanolayer deposition. The heterogeneous integration of thick film GaN and polycrystalline diamond was achieved, with a bonding rate of ~92.4%. The team used variable temperature confocal Raman spectroscopy technology to study the residual stress of the GaN/diamond bonding interface in the temperature range of -55°C to 250°C and its changes with temperature. They found that the GaN/diamond bonding interface at room temperature has ~200 MPa residual stress, and the interface stress increases asymmetrically when the temperature increases, that is, the stress on the diamond side increases significantly, while the stress on the GaN side does not change much. This is attributed to the fact that GaN and silicon nanobonding auxiliary layers have similar coefficients of thermal expansion (CTE), while the CTEs of diamond and silicon nanobonding auxiliary layers are quite different. This asymmetric interfacial stress demonstrates the effectiveness of the amorphous silicon nanolayer as a buffer layer to relieve stress.

Please, Log in or Register to view URLs content!
it's truly amazing how fast they are moving here. If they can get GaN-on-Diamond radar in production before end of this decade, that would be quite the game changer
 

tokenanalyst

Brigadier
Registered Member

The total investment is about 500 million yuan! Huaping County signs a project to produce 150,000 crucibles per year​


Huaping County People's Government signed an investment agreement with Lijiang Huapin Quartz Products Co., Ltd. for an annual production of 150,000 crucibles project. China Powder Network News On March 19, the Huaping County People's Government signed an investment agreement with Lijiang Huapin Quartz Products Co., Ltd. for a project with an annual output of 150,000 crucibles. It is reported that Lijiang Huapin Quartz Products Co., Ltd. settled in Shilongba Clean Energy Industrial Park in 2018. From the first phase of the crucible project in 2019 to 2023, the company produced 158,400 quartz crucibles, achieved an industrial output value of 1.233 billion yuan, and paid a tax of 1.31 billion yuan. billion, achieving a total import and export volume of 73.31 million yuan. The contracted project with an annual output of 150,000 crucibles covers an area of 80 acres, with an estimated total investment of about 500 million yuan. The construction content includes workshops, comprehensive buildings, and ancillary water, electricity and other production equipment. The site leveling project is expected to be completed by the end of May this year and completed within the year. Factory construction.​


Please, Log in or Register to view URLs content!
 

tphuang

Lieutenant General
Staff member
Super Moderator
VIP Professional
Registered Member
Please, Log in or Register to view URLs content!

this is a display of all the SiC players in China at Semicon. There were 6 and 8 inch Semi products everywhere and even 12 inch sic crystal. Looks like also domestic sic machineries are being displayed.

CETC Shanxi was showing a whole bunch of SiC machines.
 

tokenanalyst

Brigadier
Registered Member
View attachment 126973
What didn’t work between 2018 and 2023 will definitely work in 2024.
1711051694440.png

Is basically the definition of insanity.

The stooges in D.C. are fueled by feelings not by logic or reasoning, they will continue as long they feel that they are winning or something and when they feel that they losing they will demand more of the same, like lunatics in a asylum when you try to change the music.

Remember that these guys are the ones who like to run multi-trillion-multi decade wars with no strategy on how to get out. That is why I said that Chinese companies should give the illusion that things will return to "normal" anytime soon.

Is only when the losses are so high that becomes painfully obvious that the strategy is not working that this stooges will maybe back off. The more China indigenize their industry at the expense of US companies the more the pressure will grow in D.C. to things return to "normal".​
 

staplez

New Member
Registered Member
From the article the Zhaoxin kx-7000 competes with 6 year old processors from AMD and Intel. Twice as fast as the kx-6870a they compared it against.

Please, Log in or Register to view URLs content!
Something that bothers me about that article is the KX-7000 chip they tested is the lowest end one as denoted that it runs at 3.0 GHz. The faster chip runs at 3.7 GHz. But instead of mentioning that in the article, they say they don't know why it's running at 3.0 GHz. So, in reality, Zhaoxin is further along than they admit.
 

staplez

New Member
Registered Member
At this week's Semicon China expo in Shanghai, state-owned Naura Technology Group, China's largest chip equipment maker, touts in a video that its machines can handle the 7-nanometer production process that makes chips used in smartphones.

Please, Log in or Register to view URLs content!
Unfortunately we don't know and zhaoxin isn't saying. In 2020 they said they were going to use the 7nm process at TSMC, but not much was talked about since then. Then Zhaoxin just released the chip last year without talking much about it.
 

proelite

Junior Member
The best strategy for US going forward is to require Chinese companies to set shop in the US and hire and train lots of Americans while doing technology transfer.

But your average American politicians and redneck would rather have US become Cuba than see that happening.

See the Gotion nonsense.
 
Top