Urupu successfully launches wafer resistivity measurement equipment SICV200
Urupa Semiconductor Equipment (Wuxi) Co., Ltd. ("Urupup" for short) announced that the company has recently successfully launched the wafer resistivity measurement equipment SICV200 and will soon be delivered to customers for verification.SICV200 is a semiconductor measurement equipment used to measure the resistivity of silicon wafers and the doping concentration of silicon carbide or other semiconductor materials. It can support sustained multi-frequency CV on wafers of various sizes including 12 inches. Characterization analysis. In terms of machine configuration, SICV200 has semi-automatic solutions of various sizes and fully automatic solutions that comply with SEMI standards. It can be directly connected to the MES system of the customer's factory to achieve automated production.
Dr. Tang Deming, general manager of URP, said that carrier concentration is an important technical parameter when performing homoepitaxial growth on a substrate. Currently, the industry generally uses the capacitance voltage (CV) method to measure the carrier concentration of the homoepitaxial layer. This method can directly form a Schottky barrier on the semiconductor to measure the carrier concentration of the epitaxial layer, and can also form a MOS capacitor structure to monitor the CVD process, thereby effectively evaluating the carrier concentration of the epitaxial layer in various semiconductor material manufacturing processes. The carrier concentration and the quality of the epitaxial layer can be measured and analyzed conveniently and non-destructively to provide basis and support for optimizing the epitaxial growth process.
In terms of technical solutions, Urupu has made corresponding improvements and optimizations to the equipment in response to the suggestions and pain points put forward by customers during use, fully considering the independent controllability of the supply chain and domestic substitution needs, and has made progress in intellectual property rights and innovation.
Previously, Urupu has launched the first domestic semiconductor-specific FTIR (Fourier Transform Infrared Spectroscopy) measurement equipment:
- Suitable for silicon-based epitaxial layer thickness measurement equipment Eos200/Eos300
- Applicable to silicon-based element concentration (B/P/F) measuring equipment Eos200+/Eos300+
- Through optimized hardware design (updated infrared spectrometer technology) and self-developed algorithms, the Eos200L, a device for measuring the film thickness of silicon carbide (SiC) epitaxial layer and epitaxial buffer layer, is realized.